DI 761 Search Results
DI 761 Price and Stock
Microchip Technology Inc PD-IM-7618T4HEthernet Development Tools 8 x 4-pair PSE EVB featuring PD69208T4 + PD69210 loaded w/IEEE802.3bt FW |
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PD-IM-7618T4H | 2 |
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ADLINK Technology Inc 16GB DDR4 RDIMM 2666 VLPMemory Modules DDR4-2666, 16GB, 2Gx72, VLP R-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No(B-die), Chip(1Gx8) |
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16GB DDR4 RDIMM 2666 VLP |
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ADLINK Technology Inc 16G DDR4-3200 U-DIMM NON ECCMemory Modules DDR4-3200, 16GB, 2Gx64, U-DIMM 288P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(2Gx8) |
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16G DDR4-3200 U-DIMM NON ECC |
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ADLINK Technology Inc 16G DDR4-3200 RDIMM 288P 2RX8Memory Modules DDR4-3200, 16GB, 2Gx72, R-DIMM 288P, 1.2V, Rank:2, CL22, ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8), Anti-sulfur |
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16G DDR4-3200 RDIMM 288P 2RX8 |
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Microchip Technology Inc PD-IM-7618T4Ethernet Development Tools 8 x 2-pair PSE EVB featuring PD69208T4 + PD69210 loaded w/IEEE802.3at FW |
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PD-IM-7618T4 |
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DI 761 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LL1935
Abstract: 6 pin audio transformer transformer winding reference LUNDAHL guitar preamp pcb layout 7 pin transformer audio level transformers microphone preamp preamp guitar 5 pin audio transformer
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S-761 LL1935 LL1935 R090415 6 pin audio transformer transformer winding reference LUNDAHL guitar preamp pcb layout 7 pin transformer audio level transformers microphone preamp preamp guitar 5 pin audio transformer | |
WORKING PRINCIPLE IR SENSOR
Abstract: Capteur Sensors UL61010-1
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23P90Y0 CH-8501 335-84tgestellt WORKING PRINCIPLE IR SENSOR Capteur Sensors UL61010-1 | |
DCR7610H28Contextual Info: DCR7610H28 Phase Control Thyristor DS6062-1 April 2011 LN28302 KEY PARAMETERS FEATURES • Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 2800 V 7610 A 105000 A 1000 V/µs 200 A/µs * Higher dV/dt selections available APPLICATIONS |
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DCR7610H28 DS6062-1 LN28302) DCR7610H26 DCR7610H24 DCR7610H22 700mA, DCR7610H28 | |
Contextual Info: DCR7610H28 Phase Control Thyristor DS6062-1 April 2011 LN28302 KEY PARAMETERS FEATURES • Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 2800 V 7610 A 105000 A 1000 V/µs 200 A/µs * Higher dV/dt selections available APPLICATIONS |
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DCR7610H28 DS6062-1 LN28302) DCR7610H26 DCR7610H24 DCR7610H22 700mA, | |
WORKING PRINCIPLE IR SENSOR
Abstract: UL61010-1 23P90Y0
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23P90Y0/0500 2002/95/EC CH-8501 CN-201612 WORKING PRINCIPLE IR SENSOR UL61010-1 23P90Y0 | |
12VDC sf 249
Abstract: 230 97o Osram LED SMD 5630 diodo 2B
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VG/71P VG/73P VL-5081-65-B VL-5081-65-BV VL-5081-85-B VL-5081-85-BV 12VDC sf 249 230 97o Osram LED SMD 5630 diodo 2B | |
Contextual Info: VS-ST333C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors Hockey PUK Version , 720 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt |
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VS-ST333C O-200AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
transistor 8P
Abstract: capacitor 100n DROP IN GS9004B GS9004C GS9004CCKB GS9004CCTB GS9007 GS9024 TSG422
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GS9004C GS9004C GS9004C, GS9024. GS9024 GS90Miyamae transistor 8P capacitor 100n DROP IN GS9004B GS9004CCKB GS9004CCTB GS9007 GS9024 TSG422 | |
EB900
Abstract: TSG422 GS9004BCKB
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GS9004B GS9004A GS9004B GS9004B, GS9024. GS9024 C-101, EB900 TSG422 GS9004BCKB | |
Contextual Info: Bulletin I25238 10/06 ST333CPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK 720A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt |
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I25238 ST333CPbF O-200AB ST333C. 12-Mar-07 | |
Contextual Info: Bulletin I25238 10/06 ST333CPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK 720A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt |
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I25238 ST333CPbF O-200AB ST333C. | |
Contextual Info: VS-ST333C.C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors Hockey PUK Version , 720 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt |
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VS-ST333C. O-200AB 20electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
gs9007
Abstract: GS9004B GS9004C GS9004CCKB GS9004CCTB GS9024 TSG422
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GS9004C GS9004C GS9004C, GS9024. GS9024 GS9004B gs9007 GS9004B GS9004CCKB GS9004CCTB GS9024 TSG422 | |
Contextual Info: Bulletin I25170 rev. B 04/00 ST333C.C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK All diffused design Center amplifying gate 720A Guaranteed high dV/dt Guaranteed high dI/dt |
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I25170 ST333C. O-200AB 08-Mar-07 | |
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Contextual Info: ST333C.C Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 720 A FEATURES • Metal case with ceramic insulator • All diffused design RoHS • Center amplifying gate COMPLIANT • Guaranteed high dV/dt • Guaranteed high dI/dt |
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ST333C. O-200AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
ST333C
Abstract: 200AB ST33
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I25170 ST333C. O-200AB ST333C 200AB ST33 | |
Contextual Info: ST333C.C Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 720 A FEATURES • Metal case with ceramic insulator • All diffused design RoHS • Center amplifying gate COMPLIANT • Guaranteed high dV/dt • Guaranteed high dI/dt |
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ST333C. O-200AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
200AB
Abstract: ST33 ST333C
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I25170 ST333C. O-200AB 12-Mar-07 200AB ST33 ST333C | |
ST33
Abstract: ST333C
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ST333C. O-200AB 18-Jul-08 ST33 ST333C | |
Contextual Info: ST333C.C Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 720 A FEATURES • Metal case with ceramic insulator • All diffused design RoHS • Center amplifying gate COMPLIANT • Guaranteed high dV/dt • Guaranteed high dI/dt |
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ST333C. O-200AB 11-Mar-11 | |
RC snubber thyristor design
Abstract: 200AB ST333C
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I25170 ST333C. O-200AB 10sewidth 10ohms; 10ohms RC snubber thyristor design 200AB ST333C | |
Diode SY 356
Abstract: DI 783
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OCR Scan |
1014A Diode SY 356 DI 783 | |
C7-635
Abstract: 6es7-635-2ec02-0ae3 SIMATIC S7 - 300 technological manual 6es7635-2ec02-0ae3 OP170B CPU314C-2 S7-300 with PID control program SIMATIC S7 Programming PID function block SIMATIC C7 siemens S7 400 manual
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6ES7635-2EC02-0AE3 C7-635 S7-300 CPU314C-2 OP170B, 6es7-635-2ec02-0ae3 SIMATIC S7 - 300 technological manual 6es7635-2ec02-0ae3 OP170B S7-300 with PID control program SIMATIC S7 Programming PID function block SIMATIC C7 siemens S7 400 manual | |
Contextual Info: F SUO] LG L-Band Medium & High Power di GaAs F E is Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 12.0 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 375 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C |
OCR Scan |
2000Q. |