DI 156 S Search Results

SC75823E

Abstract: SC75823W SC75823 QFP-64-14 384Hz LQFP-64-10X10-0 S50-S51 LCD 15.6" D100 D103
Contextual Info: SC75823 1/3 156 LCD SC75823E/W LCD 156 LCD * 1/3 1/2 1/3 1/3 LCD 156 * CCB * * * INH * LCD * 4.5~ 6.0V SC75823W LQFP-64-10 X 10-0.5 SC75823E QFP-64-14 X 14-0.8 53 54 55 52 S52 COM1 COM2 COM3 58 59 57 51 S51 1 S1 VDD1 VDD2 INH OSC 61 VDD 56 VSS 60 CL DI 64

Polyamide

Contextual Info: Instruction Sheet Storage Maintenance for Mass Termination Assembly MTA - 100 and - 156 Connector Strain Relief Covers Made with Polyamide PRODUCT IS MOISTURIZED DO NOT OPEN BAG UNTIL TIME OF USE PRODUCT WEIGHT 408- 10313 31 JUL 09 Rev A AMOUNT OF DI WATER TO ADD

C1162

Abstract: U500
Contextual Info: DI A L I G H T CORP E Ö 1 E L 7 E 0 0 0 4 2 5 5 371 STE D IDIA S n a p -in L E D in d ic a to r s > *SÓ¿ .166" end .250" mounting hole 558 & 559 series 558 SERIES WITH STRAIGHT TERMINALS .190 -D IA . r -4 6 8 11.89IMAX (4 83 t4 78lL 188_| [m a x r c 558 Series: Mount in .156" hole

connettore

Abstract: mas-con
Contextual Info: MAS-CON d Serie CEH/CTH 156 f Série CEH/CTH 156 u Series CEH/CTH 156 i Serie CEH/CTH 156 d 2- bis 12- polige End- und Durchgangs-Federleisten Hi-Power Hochstromausführungen 12,5 A / 70° C im Raster 3,96 mm, Abdeckkappen f Connecteurs Hi-Power de puissance de

CE156F24-3

Abstract: connettori CE156F18 CT156F CE156F20-3 connettore CE156F24 CT 156
Contextual Info: MAS-CON d Serie CE/CT 156 f Série CE/CT 156 u Series CE/CT 156 i Serie CE/CT 156 d 2- bis 24- polige End- und Durchgangs-Federleisten im Raster 3,96 mm, Abdeckkappen f Connecteurs d’Extrémités et Traversants au pas de 3,96 mm de 2 à 24 contacts avec couvercle en option.

SC75823

Abstract: SC75823A SC75823B d114 D117 D100 D103 D154 D155 D156
Contextual Info: Silan Semiconductors SC75823 1/3 DUTY GENERAL-PURPOSE LCD DRIVER DESCRIPTION The SC75823 is a general-purpose LCD driver that can be used for frequency display in microprocessor-controlled radio receives QFP-64-14x14-0.8 and in other display applications. In addition to being able to directly

ABB VS 4000

Abstract: rectifier diode abb
Contextual Info: 5SDD 41H4000 5SDD 41H4000 Old part no. DV 889-4100-40 Rectifier Diode Properties § Industry standard housing § Suitable for parallel operation § High operating temperature § Low forward voltage drop Key Parameters = 4 000 V RRM = 4 136 I FAVm = 46 000

Contextual Info: w Y 3? W >R DESCRIPTION • Up to 2ns delay range ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ =20ps/digitai step resolution ■ >1 GHz bandwidth ■ On-chip cascade circuitry ■ 75Kki2 input pulldown resistor ■ Fully com patible with M otorola MC10E/100E195

Contextual Info: ThomasSBetts Cardedge Modified Bellows .156" CENTERLINE RIGHT ANGLE DIP SOLDER TAILS .200" ROW-TO-ROW .150" ROW-TO-ROW <§- « 1 LR49571 E60960 P h y s ic a l P r o p e r t ie s I n s u l a t io n R e s is ta n c e : 5 0 0 0 m e g o h m s m inim um . I n s e r t io n / W it h d r a w a l F o r c e D a u g h t e r C a r d :

sss4n60a

Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high

100E196

Contextual Info: * C lo c k w o rk s SY10E196 SY100E196 P R O G R A M M A B L E DELAY CHIP WITH A N A L O G INPUT SYNERGY S E M IC O N D U C T O R DESCRIPTION FEATURES • Up to 2ns delay range ■ Extended 100E V ee range of -4.2V to -5.5V ■ ~20ps digital step resolution

Contextual Info: * PROGRAMMABLE DELAY CHIP SYNERGY SEM IC O N D U C TO R FEATURES • ■ C lo c k w o r k s ' SY10E195 S Y 10Q E 195 DESCRIPTION Up to 2ns d e la y range 2 0 p s /d ig ita l s te p re s o lu tio n ■ >1 GHz b a n d w id th ■ O n -c h ip c a sca d e c irc u itry

Contextual Info: * PROGRAMMABLE DELAY CHIP SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION Up to 2ns delay range ~20ps/digital step resolution >1GHz bandwidth On-chip cascade circuitry ESD protection of 2000V Fully compatible with Motorola MC10E/100E195 PIN CONFIGURATION N CO T

Contextual Info: * Clockworks " PROGRAMMABLE DELAY CHIP SYNERGY SY10E196 SY1GDE19B S E M IC O N D U C T O R DESCRIPTION FEATURES • Up to 2ns delay range ■ =20ps digital step resolution ■ Linear input for tighter resolution ■ >1 GHz bandwidth ■ On-chip cascade circuitry

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT li PD16732A, 16732B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES The n PD16732A, 16732B are a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of

specifications+of+IC+7432+supply+voltage

Contextual Info: PCI-7432/7433/7434, cPCI-7432/7433/7434 64-CH Isolated Digital I/O Cards CompactPCI Introduction cPCI-7432 ADLINK's cPCI/PCI-743X series cards are 64-CH high-density digital input and/or output cards that provide a robust 2,500 V isolation protection and are suitable for most industrial applications. The wide input range of the cPCI/PCI-7432

Contextual Info: * Clockworks SY10E195 SY100E195 PROGRAMMABLE DELAY CHIP SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION Up to 2ns delay range Extended 100E V ee range of -4.2V to -5.5V ~20ps/digital step resolution >1GHz bandwidth On-chip cascade circuitry 75KkH input pulldown resistor

Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

CBVK741B019

Abstract: F63TNR F852 FDR8305N FDR835N
Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

IRG4PSH71KD

Contextual Info: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

MPSS156

Abstract: MFAS156 MLAS156 MWWS156 MLSS156
Contextual Info: MAS-CON d Serie MF/ML/MP 156 f Série MF/ML/MP 156 u Series MF/ML/MP 156 i Serie MF/ML/MP 156 d 2- bis 24- polige Stiftleisten im Raster 3,96 mm brechbar . f Connecteurs mâles au pas de 3.96mm de 2 à 24 points (à rompre). u 3.96 mm Headers available in 2 - 24 circuits (breakable).

Contextual Info: * Clockworks SY10E195 SY100E195 PROGRAMMABLE DELAY CHIP SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION Up to 2ns delay range Extended 100E V ee range of -4.2V to -5.5V ~20ps/digital step resolution >1GHz bandwidth On-chip cascade circuitry 75KkH input pulldown resistor

lt 39 diode smd

Abstract: smd diode 78a IRG4ZH71KD
Contextual Info: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,

Contextual Info: 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. FOR ALL PUBLICATION R IG H T S , 6 5 3 2 19 DI ST LOC R ES ER V ED . REVISIONS 54 CM DESCRIPTION B R E V I 5 ED PER 0G3B-0E02-00 KW 13-OCT-OO DB TUBE NATERIAL: