DH 60 Search Results

sonic cleaner

Contextual Info: DH 60 Advanced Technical Information IFAVM = 64 A VRRM = 1400-1800 V trr = 150 ns Fast Recovery Diode SONIC series VRSM VRRM V V 1400 1600 1800 1400 1600 1800 Type C A TO-247 AD C DH 60-14A DH 60-16A DH 60-18A A A = Anode, C = Cathode Conditions Maximum Ratings

Contextual Info: DH 60 IFAVM = 60 A VRRM = 1400-1800 V trr = 150 ns Fast Recovery Diode SONIC-FRDTM series VRSM VRRM V V 1400 1600 1800 1400 1600 1800 Type C A TO-247 AD C DH 60-14A DH 60-16A DH 60-18A A A = Anode, C = Cathode Conditions Maximum Ratings IFRMS IFAVM IFRM TVJ = TVJM

4018A

Contextual Info: DH 40-18A Advanced Technical Information IFAVM = 40 A VRRM = 1400-1800 V trr = 100 ns Fast Recovery Diode SONIC-FRDTM series VRSM VRRM V V 1400 1600 1800 1400 1600 1800 Type C A TO-247 AD C DH 40-14A DH 40-16A DH 40-18A A A = Anode, C = Cathode Symbol Conditions

Contextual Info: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

TSMG2700

Contextual Info: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

DIODE T25 4 H5

Abstract: diode t25 4 L0 T25 4 h5 DIODE T25 4 DIODE T25 DIODE T25 4 C diode t25 4 A0 V126 SEMITOP weight THYRISTOR tv 930
Contextual Info: SK 70 DH V RW i- V OFM V k - 68 A fu ll co n d uce s« V 9C0 800 S K 70 DH 08 1300 1200 S K 70 DH 12 1700 1600 S K 70 DH 16 S ym bol C o n d itio n s 'o T # - 8 0 -C •f sm •' T ^ - 2 5 *C ; 10 ms C V -e o -c ) V alues - 126 *C; 1 0 m s SEMITOP 3 Half Controlled Bridge

Contextual Info: TLVD4200 Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape

VSMG2000

Abstract: FCD830
Contextual Info: VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG2000X01 VSMG2020X01 21725-2 DESCRIPTION VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs DH technology with high radiant power and high

Contextual Info: TLVD42Q1S2 Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD42Q1S2 series was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its

Contextual Info: TLVD42Q1S2 www.vishay.com Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • High brightness • Wide viewing angle • Categorized for luminous flux • Available in DH red • Tinted clear package • Low power dissipation

Contextual Info: TLVD42Q1S2 www.vishay.com Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • High brightness • Wide viewing angle • Categorized for luminous flux • Available in DH red • Tinted clear package • Low power dissipation

Contextual Info: TLVD4200 Vishay Semiconductors DH Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape

Contextual Info: TLVD4200 Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape

600 Va ups

Contextual Info: DH 90 Advanced Technical Information IFAVM = 87 A VRRM = 600 V trr = 100 ns Fast Recovery Diode SONIC series VRSM VRRM V V 600 600 Type C A TO-247 AD C DH 90-06A A C A = Anode, C = Cathode Conditions Maximum Ratings IFRMS IFAVM IFRM TVJ = TVJM TC = 80°C; rectangular, d = 0.5

Contextual Info: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF4410 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, in a clear, untinted plastic package. DH technology combines high speed with high radiant

MAX160

Abstract: TSMF4710-GS08 TSMF4710-GS18
Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant

TSHG8400

Abstract: 08MAR06
Contextual Info: TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHG8400 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant

Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant

TLDR4400

Contextual Info: TLDR4400 TELEFUNKEN Semiconductors Very High Intensity DH–red LED, ø 3 mm Tinted Diffused Color Double hetero red Type TLDR4400 Technology GaAlAs on GaAs Angle of half intensity ±ö 40° Description This LED contains the double heterojunction DH GaAlAs on GaAs technology.