DG S22 Search Results

J305

Contextual Info: MOTOROLA Order this document by J304/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifiers N-Channel — Depletion J304 J305 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage V DG -3 0 Vdc Gate-Source Voltage VGS -3 0 Vdc Gate Current

Contextual Info: MwT-0208-101 DG 2-8 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4266 Solar Way Fremont, CA 94538 510-651-6700 FAX510-651-2208 • 28 dB TYPICAL SMALL SIGNAL GAIN • 1.5:1 TYPICAL INPUT AND OUTPUT VSWR • 45 dB TYPICAL REVERSE ISOLATION • ±0.6 dB TYPICAL OUTPUT POWER FLATNESS

101dg

Contextual Info: MwT -0208-101 DG MHZ 2-8 GHz MMIC AMPLIFIER MODULE MICRO WA VE TECHNOLOG Y 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 28 dB TYPICALSMALL SIG NALGAIN 1.5:1 TYPICAL INPUT AND OUTPUT VSWR 45 dB TYPICAL REVERSE ISOLATION i0.6 dB TYPICAL OUTPUT POWER FLATNESS

Contextual Info: MwT-0208-101 DG 2»8 GHz MMIC AMPLIFIER MODULE M i c r o W a ve T e c h n o l o g y MICROWAVE 4 2 6 8 solar way Fremont, c a 94538 415-651-6700 f a x 415-651-2208 TECHNOLOGY 37E blSMlDG QÜD0070 7 I MRIiJV _ti -. 30 dB TYPICAL SMALL SIGNAL GAIN 1.5:1 TYPICAL INPUT AND OUTPUT VSWR

LTC5599

Contextual Info: LTC5599 30MHz to 1300MHz Low Power Direct Quadrature Modulator Description Features n n n n n Frequency Range: 30MHz to 1300MHz Low Power: 2.7V to 3.6V Supply; 28mA Low LO Carrier Leakage: –51.5dBm at 500MHz Side-Band Suppression: –52.6dBc at 500MHz Output IP3: 20.8dBm at 500MHz

TC9240F

Abstract: 66 pin ic QFP80-P-1420-0 toshiba tc9240f 68SEL S22C1
Contextual Info: TO SH IBA TC9240F TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9240F AUDIO LCD DRIVER IC The TC9240F is a driver 1C designed for exclusive use for output expansion LCD which is controlled by serial data. FEATURES • 1 / 2 or 1 / 3 duty and 1/2 or 1/3 bias can be switched.

B37940-K5220-J62

Abstract: siemens rs 1016 B37940K5220J62 B54102 mmic-amplifier CGY120 B54102-A1471-J60 B37490-K5120-J62 0805CS-220XMBC MMIC marking CODE c4
Contextual Info: SIEMENS GaAs MMIC CGY 120 Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB * 50Q input and output matched * Low power consumption 'Operating voltage range: 2.7 to 6 V

F06300

Contextual Info: SMF-06310 ELECTRONICS Sam sung M icrow ave Sem iconductor G 3 Ì I 1 O p t ¡I T lÍ Z G C l Low Current GaAs FET 2-12 GHz Description Features The S M F-06310 is a packaged version of the SM F-06300. The chip is a 600 |im n-channel M E S F E T with 0.5 |im gate

B54102

Abstract: dg s22 B37940-K5220-J62
Contextual Info: SIEMENS CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB *5 0 i2 input and output matched * Low power consumption ‘ Operating voltage range: 2.7 to 6 V

siemens rs 1016

Abstract: 012E3
Contextual Info: SIEMENS CGY 120 GaAs MMIC • • • • • • • Monolithic microwave IC MMIC-Amplifier for mobile communication Variable gain amplifier for GSM/PCN applications Gain Control range over 50dB 50Q input and output matched Low power consumption Operating voltage range: 2.7 to 6 V

B37940-K5220-J62

Abstract: B54102 Siemens MMIC 0805CS-220XMBC siemens rs 1016 B37940K5220J62 SIEMENS gaas 0805CS-270XMBC Q62702-G44 marking code 02 mmic
Contextual Info: SIEMENS C G Y120 GaAs MMIC Datasheet * M onolithic microwave IC MMIC-Am plifier for mobile communication * Variable gain am plifier for GSM/PCN applications * Gain Control range over 50dB * 5 0 i l input and output matched * Low power consumption •O p eratin g voltage range: 2.7 to 6 V

siemens rs 1016

Abstract: B37940-K5220-J62 B54102 B3749 0805CS-270XMBC type pd21 0805CS-220XMBC Q62702-G44 Siemens MMIC
Contextual Info: CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB

DIVIDE-BY-17

Contextual Info: GEC PLESSEY DS3653-1-2 SP8782A & B 1GHz 16/17, -5-32/33 MULTI-MODULUS DIVIDER The S P 8782 is a m u lti-m o d ulu s d ivid e r w hich d ivid e s by 16/17 w hen th e R atio S elect input is low and by 3 2 /3 3 w hen the R atio S e le ct inp u t is high. W h e n high, th e M o du lu s Control

ETU45B

Abstract: ETU27B ETU76B
Contextual Info: 1 Siemens AG 2015 Air Circuit Breakers 1/2 Introduction 1/9 1/10 1/17 1/24 1/31 1/38 1/45 3WL air circuit breakers/ non-automatic air circuit breakers up to 6300 A AC , IEC Introduction 3-pole, fixed-mounted versions 3-pole, withdrawable versions 4-pole, fixed-mounted versions

D30 DIAC

Abstract: D32 DIAC diac D30 TC9297F TC9297FB ak02
Contextual Info: TOSHIBA TC9297F/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9297F, TC9297FB LCD DRIVER W ITH ON-CHIP KEY INPUT TC9297F/FB are an LCD driver 1C with on-chip key input, which is serial data controlled. FEATURES • Supports switching between 1/2 and 1/3 duty, and

TA0967A

Abstract: Fc-500
Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 1561 MHz MODEL NO.:TA0967A REV. NO.:1

CFY 18

Abstract: HEMT marking D HEMT marking K VS005553
Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!

HEMT marking K

Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: FLM3742-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 3.7 to 4.2GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM3742-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 41% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 3.7 to 4.2GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM5964-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM5053-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 35% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM5053-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM5964-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm