DFN PRODUCT Search Results
DFN PRODUCT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TK085V60Z1 |
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N-ch MOSFET, 600 V, 30 A, 0.085 Ω@10 V, DFN 8×8 | Datasheet | ||
| TK130V60Z1 |
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N-ch MOSFET, 600 V, 18 A, 0.13 Ω@10 V, DFN 8×8 | Datasheet | ||
| TK165V60Z1 |
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N-ch MOSFET, 600 V, 16 A, 0.165 Ω@10 V, DFN 8×8 | Datasheet | ||
| TK210V65Z |
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MOSFET, N-ch, 650 V, 15 A, 0.21 Ohm@10V, DFN 8 x 8 | Datasheet | ||
| TK115V65Z5 |
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N-ch MOSFET, 650 V, 23 A, 0.115 Ω@10 V, High-speed diode, DFN 8×8 | Datasheet |
DFN PRODUCT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FREQUENCY CONTROL PRODUCTS TTL & HCMOS PRECISION OSCILLATORS DFN 14-KB, DFN 4-KB & DFN 4-KH DFN 4 DFN 14 KEY FEATURES 1 to 70 MHz 12.7±0.1 20.3±0.1 15.24 APPLICATIONS 7.62 7.62 12.7±0.1 Encapsulated crystal 7.62 ± 15 ppm overall stability available PIN 1 |
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14-KB, 14-KB J-STD-020C | |
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Contextual Info: FREQUENCY CONTROL PRODUCTS SURFACE MOUNT LVDS CLOCK OSCILLATOR DFN S11-MLLPI 3.3 V & DFN S11-MLDPI (2.5 V) L±0.2 FEATURES 5.08 Low noise PLL multiplication circuit 2.4 5.0±0.2 27 TO 800 MHz Low jitter L H 7.0 mm 1.7 mm 1.4 APPLICATIONS 5.08 DFN S11 1 2 |
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S11-MLLPI S11-MLDPI XB100 XE100 S11-MLDPI S11-MLL/MLD | |
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Contextual Info: FREQUENCY CONTROL PRODUCTS SURFACE MOUNT CLOCK OSCILLATOR DFN S11-ELCPI 3.3 V & DFN S11-EDCPI (2.5 V) L±0.2 FEATURES 5.08 Fundamental and 3rd overtone mode crystals 2.4 5.0±0.2 10 TO 200 MHz Low jitter L H 7.5 mm 1.7 mm 1.4 APPLICATIONS 5.08 DFN S11 1 |
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S11-ELCPI S11-EDCPI XB100 XE100 S11-ELCPI XE50B S11-EL/ED | |
DFN-4
Abstract: marking R0 dfn 5 94v-0 lcd 94V0 LCD display ROHS
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EN61000-4) 5/50ns DFN-4 marking R0 dfn 5 94v-0 lcd 94V0 LCD display ROHS | |
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Contextual Info: 05266 ESD4-DFN LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ ✔ ✔ ✔ ✔ ✔ Cellular Phones Color LCD Display Panel Notebooks Personal Digital Assistant PDA Global Positioning System (GPS) SMART Cards IEC COMPATIBILITY (EN61000-4) DFN-4 DFN-6 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV |
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EN61000-4) 5/50ns | |
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Contextual Info: 05404 PLC03-3.3-DFN Only One Name Means ProTek’Tion HIGH POWER LOW CAPACITANCE TVS ARRAY DESCRIPTION The PLC03-3.3-DFN is a low capacitance, high powered TVS array available in a six lead DFN package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient |
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PLC03-3 5/50ns 94cerning | |
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Contextual Info: SURFACE MOUNT LVDS CLOCK OSCILLATOR DFN S11-MLLPI 3.3 V & DFN S11-MLDPI (2.5 V) L±0.2 FEATURES 5.08 Low noise PLL multiplication circuit 2.4 5.0±0.2 27 TO 800 MHz Low jitter L H 7.0 mm 1.7 mm 1.4 APPLICATIONS 5.08 DFN S11 1 2 3 4 5 6 6 1 2.4 E/D NC GND |
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S11-MLLPI S11-MLDPI J-STD-020C | |
FORDAHL Frequency Control ProductsContextual Info: SURFACE MOUNT CLOCK OSCILLATOR DFN S5-K 5 V & DFN S5-L (3.3 V) KEY FEATURES 14.0 MAX 5.08 HCMOS/TTL compatible output 2.0 9.8 MAX 1 to 70 MHz 5 or 3.3 V supply available 4.7 MAX 0.5 APPLICATIONS Clocking/Datacomms 5.08 DFN S5 1 2 3 4 7.62 Tri-state or N/C |
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40MHz J-STD-020C FORDAHL Frequency Control Products | |
FORDAHL Frequency Control Products
Abstract: OCXO S15 FORDAHL DFN s2
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14-E/EC/LEC 14EC/LEC/O 14-EC 14-LEC J-STD-020C FORDAHL Frequency Control Products OCXO S15 FORDAHL DFN s2 | |
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Contextual Info: SURFACE MOUNT LVDS CLOCK OSCILLATOR DFN S11-LLPI 3.3 V & DFN S11-LDPI (2.5 V) L±0.2 FEATURES 5.08 rd Fundamental and 3 overtone mode crystals 2.4 5.0±0.2 10 TO 250 MHz Low jitter L H 7.0 mm 1.7 mm 1.4 APPLICATIONS 5.08 DFN S11 1 2 3 4 5 6 6 1 2.4 E/D NC |
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S11-LLPI S11-LDPI J-STD-020C | |
DFN2020B-6
Abstract: DFN2020B
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BAV99BRLP 575mm 500mW BAV99" DFN2020B-6 J-STD-020 MIL-STD-202, DS35317 621-BAV99BRLP-7 DFN2020B | |
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Contextual Info: FREQUENCY CONTROL PRODUCTS SURFACE MOUNT CLOCK OSCILLATOR DFN S11-B/ BL/BD L±0.2 KEY FEATURES 5.08 Standard ceramic package 2.6 5.0±0.2 1.5 to 156 MHz 1.4 HCMOS/TTL compatible output L H H±0.2 APPLICATIONS DFN S11 NC/Enable GND Output Vcc 1 2 3 4 4 1 2.4 |
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S11-B/ S11-B S11-BL S11-BD XB100 XI100 XE100 S11-BLRZ S11-B/BL/BD | |
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Contextual Info: MSAT-P25 PIN Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is |
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MSAT-P25 3000hat A17103 | |
MetelicsContextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is |
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MSAT-N25 A17102 Metelics | |
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METELICSContextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is |
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MSAT-N25 A17102 METELICS | |
thermistor ntc characteristic 40k
Abstract: LTC1734 LTC1734L LTC4052 LTC4053 LTC4095 NTHS0603N011-N1003F Si2302 NTC thermistor circuit diagram 4105V
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LTC4095 LTC4095 100mA 950mA 4095f thermistor ntc characteristic 40k LTC1734 LTC1734L LTC4052 LTC4053 NTHS0603N011-N1003F Si2302 NTC thermistor circuit diagram 4105V | |
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Contextual Info: MEST2G-010-20 PIN DIODE SWITCH ELEMENT 2012 Plastic Molded DFN Description Features A broadband medium power switch element in a 1.9 X 1.1 mm DFN package. This device is Electrical Series and Thermal direct to Ground (EST2G). This device is designed for wireless infrastructure |
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MEST2G-010-20 STD-J-20C A17100 | |
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Contextual Info: LTC2641/LTC2642 16-/14-/12-Bit VOUT DACs in 3mm x 3mm DFN Features Description Tiny 3mm × 3mm 8-Pin DFN Package Maximum 16-Bit INL Error: ±1LSB over Temperature Low 120µA Supply Current Guaranteed Monotonic over Temperature Low 0.5nV•sec Glitch Impulse |
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LTC2641/LTC2642 16-/14-/12-Bit 16-Bit 50MHz LTC2641) LTC2642) 10-Lead LTC2054 | |
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Contextual Info: MEST2G-010-20 PIN DIODE SWITCH ELEMENT 2012 Plastic Molded DFN Description Features A broadband medium power switch element in a 1.9 X 1.1 mm DFN package. This device is Electrical Series and Thermal direct to Ground (EST2G). This device is designed for wireless infrastructure |
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MEST2G-010-20 A17100 | |
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Contextual Info: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is |
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MSWSH-040-30 A17122 | |
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Contextual Info: MSWSSB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, High Linearity medium power series shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It |
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MSWSSB-020-30 A17099, | |
MEST2G-010-20Contextual Info: MEST2G-010-20 PIN DIODE SWITCH ELEMENT 2012 Plastic Molded DFN Description Features A broadband medium power switch element in a 1.9 X 1.1 mm DFN package. This device is Electrical Series and Thermal direct to Ground (EST2G). This device is designed for wireless infrastructure |
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MEST2G-010-20 STD-J-20C A17100 MEST2G-010-20 | |
5 pin relay NO NC
Abstract: AN-100 CPC7581 EIA-481-2 GR-1089-CORE J-STD-033 pin plating microinch
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CPC7581 16-pin DS-CPC7581-R05 5 pin relay NO NC AN-100 CPC7581 EIA-481-2 GR-1089-CORE J-STD-033 pin plating microinch | |
msat-p25Contextual Info: MSAT-P25 PIN Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is |
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MSAT-P25 A17103 msat-p25 | |