DFN 3.3X3.3 Search Results
DFN 3.3X3.3 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TK085V60Z1 |
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N-ch MOSFET, 600 V, 30 A, 0.085 Ω@10 V, DFN 8×8 | Datasheet | ||
TK130V60Z1 |
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N-ch MOSFET, 600 V, 18 A, 0.13 Ω@10 V, DFN 8×8 | Datasheet | ||
TK165V60Z1 |
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N-ch MOSFET, 600 V, 16 A, 0.165 Ω@10 V, DFN 8×8 | Datasheet | ||
TK210V65Z |
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MOSFET, N-ch, 650 V, 15 A, 0.21 Ohm@10V, DFN 8 x 8 | Datasheet | ||
TK095V65Z5 |
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N-ch MOSFET, 650 V, 28 A, 0.095 Ω@10 V, High-speed diode, DFN 8×8 | Datasheet |
DFN 3.3X3.3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LPS3015-472MLB
Abstract: GRM21BR60J106KE19L ISL9105 ISL9105IRZ-T TB379 CDRH2D14NP-3R3
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ISL9105 FN6415 600mA ISL9105 600mA, 600mA. LPS3015-472MLB GRM21BR60J106KE19L ISL9105IRZ-T TB379 CDRH2D14NP-3R3 | |
Contextual Info: ISL9105 Data Sheet December 21, 2006 FN6415.0 600mA Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator Features ISL9105 is a 600mA, 1.6MHz step-down regulator that is ideal for powering low-voltage microprocessors in handheld devices such as PDAs and cellular phones. It is optimized |
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ISL9105 FN6415 600mA ISL9105 600mA, 600mA. | |
IGBT 60A spice model
Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
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September-2006 IGBT 60A spice model 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola | |
ER5312D
Abstract: EN5366QI
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ER5312D ER5312D EN5366QI | |
Contextual Info: AON7510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 75A ID (at VGS=10V) |
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AON7510 | |
Contextual Info: AON7292 100V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS MV technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Application |
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AON7292 | |
Contextual Info: AON7254 150V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS MV technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Application |
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AON7254 | |
2088AB* led matrix
Abstract: led matrix 2088ab 2088AB led matrix led matrix 8x8 mini circuits 2088AB matrix 2088ab Ultrasonic humidifier circuit torque settings for metric cap head screws TRANSISTOR C 6090 EQUIVALENT CV 7311
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May-2006 2088AB* led matrix led matrix 2088ab 2088AB led matrix led matrix 8x8 mini circuits 2088AB matrix 2088ab Ultrasonic humidifier circuit torque settings for metric cap head screws TRANSISTOR C 6090 EQUIVALENT CV 7311 | |
matrix 2088ab
Abstract: 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB
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January-2007 matrix 2088ab 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB | |
DFN 3.3X3.3Contextual Info: MCP87055 High-Speed N-Channel Power MOSFET Features Description • Low Drain-to-Source On Resistance RDS(ON • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance (RG) • Fast Switching • Capable of Short Dead-Time Operation |
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MCP87055 MCP87055 Effici6-3-5778-366 DS22323B-page DFN 3.3X3.3 | |
MIPW3226D0R9M
Abstract: EN5366QI
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EQ5382D/EQ5362D/EQ5352D EQ5352DI EQ53X2D MIPW3226D0R9M EN5366QI | |
001PD
Abstract: DFN 3.3X3.3
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AON7418 001PD DFN 3.3X3.3 | |
Contextual Info: AON7418 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL |
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AON7418 | |
Contextual Info: AON7760 25V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant |
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AON7760 | |
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Contextual Info: AON7758 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant |
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AON7758 | |
AON7405Contextual Info: AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS= -10V) -30V |
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AON7405 AON7405 | |
Contextual Info: AON7280 80V N-Channel MOSFET General Description Product Summary The AON7280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely |
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AON7280 AON7280 | |
DFN 3.3X3.3Contextual Info: AON7210 30V N-Channel MOSFET General Description Product Summary The AON7210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS ON |
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AON7210 AON7210 DFN 3.3X3.3 | |
AON7423
Abstract: 33X3 DFN 3.3X3.3 20V P-Channel Power MOSFET 500A
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AON7423 AON7423 33X3 DFN 3.3X3.3 20V P-Channel Power MOSFET 500A | |
AON7428
Abstract: DFN 3.3X3.3
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AON7428 AON7428 DFN 3.3X3.3 | |
Contextual Info: AON7242 40V N-Channel MOSFET General Description Product Summary The AON7242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of |
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AON7242 AON7242 | |
AON7405
Abstract: 30V 20A power p MOSFET
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AON7405 AON7405 30V 20A power p MOSFET | |
AON7421Contextual Info: AON7421 20V P-Channel MOSFET General Description Product Summary The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications. |
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AON7421 AON7421 | |
Contextual Info: AON7210 30V N-Channel MOSFET General Description Product Summary The AON7210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS ON |
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AON7210 AON7210 |