DFL 22 Search Results

Contextual Info: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55257 DPL / DFL / DFTL / DTRL - 55L TC55257 DPL / DFL / DFTL / DTRL - 70L TC55257 DPL / DFL / DFTL / DTRL - 85L DATA SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM TENTATIVE DATA

Contextual Info: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC 55257 DPL / DFL / DFTL / DTRL - 55V TC55257 DPL / DFL / DFTL / DTRL - 70V TC55257 DPL / DFL / DFTL / DTRL - 8 5 V DATA SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM TENTATIVE DATA

tc55257

Abstract: TCS5257
Contextual Info: INTEGRATED TOSHIBA T O SH IB A M O S DIG ITA L IN T EG RA TED CIRCUIT TC55257 DPL / DFL / DFTL / DTRL - 55L TC55257 DPL / DFL / DFTL / DTRL - 70L TC55257 DPL / DFL / DFTL / DTRL - 85L SILICON GATE C M O S CIRCUIT TECHNICAL DATA 32,768-WORD BY 8-BIT STATIC RAM

Contextual Info: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: TO SH IB A TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

TC55257DPL

Contextual Info: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: T O SH IB A TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: • 00207=50 MflT ■ TC55257DPL/DFL/DFIL-55L/70L/85L PRELIMINARY . Standard TOSHIBA SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC5525TDPL is a 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low

Contextual Info: TOSHIBA < ' cc TC55257DPL/DFL/DFIL-55V/70V/85V PRELIMINARY SILICON GATE CMOS 1 32,768 WORD x 8 BIT STATIC RAM Description The TC55257DPL is a 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS tech­ nology, and operated from a single 2.7 ~ 5.5V power supply. Advanced circuit techniques provide both high speed and low

Contextual Info: n 7 T H IS JÊL DRAWING IS COPYRIGHT 19 UNPUBLISHED. RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. 6 4 5 2 3 LOG , 19 ALL RIGHTS RESERVED. DI ST REVISIONS 47 AD DE SC RI PT IO N H HOUSING M A T E R I A L COLOR: NATORAL. LIQUID CONTACT P H OS P H OR

DFL 22

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SCA2120-D07

Abstract: SCA800 AEC-Q100 SCA2100 temperature sensor spi MEMS Filter MG50 micromechanical
Contextual Info: SCA2120-D07 VTI Automotive Digital Accelerometer Platform Data Sheet SCA2120-D07 2-AXIS ACCELEROMETER WITH DIGITAL SPI INTERFACE Features • • • • • • • • • • • • 3.3V supply voltage ±2 g measurement range 2-axis measurement YZ directions

vif sweep generator

Abstract: la75676 SSOP24 record bias oscillator coil vco coil
Contextual Info: Ordering number : ENA0831 Monolithic Linear IC For TV and VCR Products LA75676V IF Signal Processor VIF+SIF Overview The LA75676V is a VIF/SIF IC that supports NTSC intercarrier reception and adopts a semi-adjustment-free design. It is provided in the SSOP24 (225mil, 0.5mm lead pitch) package, which is appropriate for miniature 2-in-1 tuner products. In

SCA810-D02

Abstract: micromechanical 702 smd AEC-Q100 SCA2100 SCA800 INCLINOMETER SMD
Contextual Info: SCA830-D06 Data Sheet SCA830-D06 1-AXIS HIGH PERFORMANCE ACCELEROMETER WITH DIGITAL SPI INTERFACE Features • • • • • • • • • • • • 3.3V supply voltage ±2 g measurement range Single axis measurement in Y direction ±50mg offset accuracy over temp range

Contextual Info: ZPtoducU, TELEPHONE:. 201 376-2922 (212) 227-6005 TELEX: 13-8720 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN silicon RF power transistor designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for

Contextual Info: FEATURES • 1 0 0 -6 0 0 MHz MODEL NO. DA0425 ¿ 3 * V *J ■ 20 dB Linear Range Typical ■ ±0.5 dB Linearity PIN Diode Linear VCA ■ 1.5 dB Insertion Loss ■ +42 dBm 3rd Order Intercept ■ 14 Pin DIP .87 RF OUT/IN PART IDENTIFICATION r .20 .22 .018 DIA LEAD

Contextual Info: SEC jtiP D 7 2 1 1 1 NEC Electronics Inc. Description Small Computer System Interface Controller Pin Configurations The ftPD72111 is a small computer system interface controller SCSIC conforming to ANSI X3T9.2/82-2 Rev.17B. The jtPD72111 SCSI controller offers a true

Contextual Info: AVET FEATURES • D C -2 0 0 0 MHz ■ 3 nSec Transition Time SP2T ■ Non-Reflective ■ Ultra Small TO -5 Package ■ Low Cost MODEL NO. DS0850-T & GaAs SP2T £ o& ■ See DS0813-T For Version With Integrated TTL Driver R F COM 8 O GND GND 7 1 «a - Q 6 RF2

Contextual Info: Ordering number : ENA0224 Monolithic Linear IC LA75501V PAL-compatible Adjustment-free IF Signal Processing VIF+SIF For Use in TV/VTR Applications Overview This LA75501V is PAL-compatible adjustment-free IF signal processing (VIF+SIF) for use in TV/VTR applications.