DEVICE MARKING CODE 102 Search Results

2n5551

Abstract: 2N55551 2N5551 circuit 2n5550
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit

smcj15a

Abstract: 710 gee marking GFQ marking code GDD SMCJ8.5A 218 GFM 218 Gex GEX 610
Contextual Info: 3DT ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Type Modified "J" Bend Lead Device Marking Code Breakdown Voltage (Volts) (Note 1) (MIN / MAX) SMCJ5.0 SMCJ5.0A SMCJ6.0 SMCJ6.0A SMCJ6.5 SMCJ6.5A SMCJ7.0 SMCJ7.0A SMCJ7.5 SMCJ7.5A SMCJ8.0

Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

marking code HB

Abstract: Mark 10A
Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

SC321

Abstract: SC321-2 Mark 10A 10A200V
Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

Contextual Info: SC211 0.8A ( 200V to 400V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GF Applications

tx 01 05a

Abstract: dALLAS MARKING CODE SC311 SC311-4 SC311-6
Contextual Info: SC311 0.5A ( 400V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code HC Applications

diode 400v 0.5a

Abstract: fast recovery diode 600v 5A SC311
Contextual Info: SC311 0.5A ( 400V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code HC Applications

marking 252

Abstract: W103
Contextual Info: SC311 0.5A ( 400V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code HC Applications

SC211

Abstract: SC211-2 SC211-4 2sc2112
Contextual Info: SC211 0.8A ( 200V to 400V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GF Applications

marking code gf

Abstract: diode GG 14
Contextual Info: SC211 0.8A ( 200V to 400V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GF Applications

SMBJ20A

Abstract: SMBJ8.5 A 15 SMBJ15A SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A
Contextual Info: ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Device Marking Code Breakdown Voltage V(BR) (Volts) at It Min. Test Current @lT(mA) Stand-Off Voltage VWM(Volts) Maximun Reverse Leakage at Vwm Id ( u A ) Max. SMBJ5.0 6.40 10 KD 7.30 KE SMBJ5.0A

SCHOTTKY DIODE SOT-143

Abstract: BAT 58
Contextual Info: Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped

SCHOTTKY DIODE SOT-143

Abstract: DIODE MARKING s7 A1017
Contextual Info: Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099 S7

siemens rectifier

Contextual Info: SIEMENS BAT 68-07W Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 -o EH A07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: SIEMENS NPN Silicon RF Transistor • BFQ 69 For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Silicon N Channel MOSFET Tetrode

Contextual Info: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFS55A

Abstract: Bfs 60 60dBi transistor b54
Contextual Info: SIEMENS BFS 55A NPN Silicon RF Transistor • For low-distortion broadband amplifiers up 1 at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFS 55A BFS 55A Q62702-F454

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

SAH-C167CW-L16M

Abstract: SAF-C167CW C166 C167
Contextual Info: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.0 Device : Stepping Code / Marking : SAH-C167CW-L16M BA This errata sheet describes the functional problems and deviations from the DC/AC specification known in this step. For backward reference, a table which

P-MQFP-144

Abstract: C166 C167 C167CR C167CR-LM SAK-C167CR-LM C167 instruction set
Contextual Info: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet June 17, 1996 / Release 1.2 Device : Stepping Code / Marking : SAK-C167CR-LM AB The C167CR is a version of the C167 with on-chip CAN module, 2 Kbyte XRAM module, and with an on-chip PLL oscillator circuit.

atmel lot marking eeprom

Abstract: sot23 mark code e2 8a2 marking atmel package marking pu bsc date sheet 2012 AT24C04B AT24C04BN-SH-B AT24C04BN-SH-T AT24C04B-PU AT24C04B-TH-B
Contextual Info: Features • Low-voltage and Standard-voltage Operation ─ 1.8 VCC = 1.8V to 5.5V • • • • • • • • • • Internally Organized 512 x 8 (4K), or 1024 x 8 (8K) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression

AT24C08C

Abstract: 5226G AT24C04C sot23-8 code book 5226-G AT24C08B 5226E ALPHA NEW sot YEAR DATE CODE
Contextual Info: Features • Low-voltage and Standard-voltage Operation ─ 1.8 VCC = 1.8V to 5.5V • • • • • • • • • • Internally Organized 512 x 8 (4K), or 1024 x 8 (8K) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression