DEVICE MARKING A3 Search Results

marking a3

Abstract: KDS120E
Contextual Info: SEMICONDUCTOR KDS120E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking A3 No. 2000. 12. 27 Item Marking Description Device Mark A3 KDS120E hFE Grade - - Revision No : 0 1/1

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

mark a3 sot23

Abstract: MARKING A3 sot23 KDS181
Contextual Info: SEMICONDUCTOR KDS181 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS181 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KDS120

Contextual Info: SEMICONDUCTOR KDS120 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS120 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

MARKING A3

Abstract: KDZ33V marking J1
Contextual Info: SEMICONDUCTOR KDZ33V MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking A3 0 1 2 1 No. Item Marking Description Device Mark A3 KDZ33V hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

USFB13

Abstract: Device Marking A3 A301
Contextual Info: SEMICONDUCTOR USFB13 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 A3 0 1 1 CATHODE MARK No. Item Marking Description Device Mark A3 USFB13 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

LMBT5551DW1T1G

Abstract: 1N914 LMBT5551DW1T3G
Contextual Info: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel

LMBT4413DW1T1G

Abstract: 1N916 marKing k13 sot-363
Contextual Info: LESHAN RADIO COMPANY, LTD. DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT4413DW1T1G FEATURE 6 5 ƽ We declare that the material of product is ROHS compliant and halogen free. 4 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking 3 Shipping LMBT4413DW1T1G

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

Y1416

Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information

Diode A3X

Abstract: SOT-23 MARK A2.X lt1 switch LMBD2835LT1 LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G LMBD2836
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE z We declare that the material of product compliance with RoHS requirements. LMBD2835LT1G LMBD2836LT1G ORDERING INFORMATION Device Marking Shipping LMBD2835LT1G A3X 3000/Tape&Reel LMBD2835LT3G

Contextual Info: Zowie Technology Corporation Monolithic Dual Switching Diode 3 MMBD2836GH CATHODE 1 ANODE 3 1 2 2 CATHODE SOT-23 ORDERING INFORMATION Marking Shipping LMBD2835LT1G Device A3X 3000/Tape&Reel LMBD2835LT3G A3X 10000/Tape&Reel LMBD2836LT1G A2X 3000/Tape&Reel LMBD2836LT3G

MMBD501

Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2

Contextual Info: Integrated Circuits Miniature 1 Gate Device Marking Function 74MA00 74MA02 74MA04 74MA08 74MA32 74MA4066 A1 A3 A5 A2 A4 A9 NAND Gate NOR Gate Inverter AND Gate OR Gate Analog Switch miniReel Order Number ^ 4" miniBag Order ggj Number 86-0000 86-0002 86-0004 250 pC.

NCP5380 D

Abstract: NCP5380 488AM
Contextual Info: NCP5380, NCP5380A 7-Bit, Programmable, Single-Phase, Synchronous Buck Switching Regulator Controller http://onsemi.com General Description MARKING DIAGRAM 1 1 NCP5380 = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package

HCT08AG

Abstract: MC74HCT08A MC74HCT08AN LS08 MC74HCT08ADR2G
Contextual Info: MC74HCT08A Quad 2-Input AND Gate with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS http://onsemi.com The MC74HCT08A is identical in pinout to the LS08. The device inputs are compatible with Standard CMOS or LSTTL outputs. MARKING DIAGRAMS

HCT32AG

Abstract: LS32 MC74HCT32A MC74HCT32AN 74HCT32A
Contextual Info: MC74HCT32A Quad 2-Input OR Gate with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT32A is identical in pinout to the LS32. The device inputs are compatible with Standard CMOS or LSTTL outputs. http://onsemi.com MARKING DIAGRAMS

din 3141

Contextual Info: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage LBAS20HT1G Switching Diode 1 z We declare that the material of product compliance with RoHS requirements. 2 SOD– 323 1 CATHODE Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

NCP81061

Abstract: NCP6151
Contextual Info: NCP81061 VR12 Compatible Synchronous Buck Dual MOSFET Driver http://onsemi.com MARKING DIAGRAM 1 QFN16 CASE 485AW Features • • Typical Applications • Power Management solutions for Desktop and Server Systems 81061 A L Y W G = Specific Device Code = Assembly Location

VPS05178

Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
Contextual Info: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking