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    DEVICE MARKING 04L Search Results

    DEVICE MARKING 04L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2910/BQA
    Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy
    9936/BCA
    Rochester Electronics LLC 9936 - Hex Inverter - Dual marked (M38510/03003BCA) PDF Buy
    54AC86/SDA-R
    Rochester Electronics LLC 54AC86/SDA-R - Dual marked (M38510R75202SDA) PDF Buy

    DEVICE MARKING 04L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DT1240-04LP ADVANCED ADVANCE INFORMATION INFORMATIO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features & Applications Mechanical Data •                 Clamping Voltage: 9V at 10A 100ns, TLP 9.4V at 5.5A 8 s/20μs


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    dt1240-04lp100nsds36312 PDF

    Contextual Info: DT1140-04LP ADVANCE INFORMATIO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data • Clamping Voltage:9V at 10A 100ns TLP; 9V at 6A 8 s/20μs   IEC 61000-4-2 ESD : Air – +20/-18kV, Contact – +20/-16kV   IEC 61000-4-5 (Lightning): ±6A (8/20µs)


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    dt1140-04lp100ns20/-18kv20/-16kv+3j-std-020mil-std-202ds36293 PDF

    Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas40-04lt1 PDF

    marking CG

    Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable


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    bas70-04lt1marking cg PDF

    diode MARKING CODE CG

    Abstract: diode cg sot-23 318 MARKING MARKING CG sot23 Diodes MARKING CG SOT-23 power sot-23 Marking cg 04LT1 CG SOT23
    Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas70-04lt1diode marking code cgdiode cg sot-23318 marking+5marking cg sot23diodes marking cg sot-23power sot-23 marking cg04lt1cg sot23 PDF

    marking 04L sot23

    Abstract: sot23 04l BAS40-04L BAS40-04LT1 04L sot23 marking 04L to236AB marking cb bas40
    Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas40-04lt1marking 04l sot23sot23 04lbas40-04l+304l sot23marking 04l to236abmarking cb bas40 PDF

    BAS70-04LT1

    Abstract: BAS70-04LT1G
    Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas70-04lt1bas70-04lt1g PDF

    Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas70-04lt1ot-23o-236abbas70-04lt1/d PDF

    BAS70-04LT1

    Abstract: BAS70-04LT1G 318 MARKING
    Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas70-04lt1bas70-04lt1/dbas70-04lt1g318 marking PDF

    04LT1

    Abstract: BAS70 BAS70-04LT1
    Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable


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    bas70-04lt1236abr14525bas70+204lt1/d04lt1 PDF

    BAS40-04L

    Abstract: BAS40-04LT1 DIODE marking 04l T1G PACKAGE 04L sot23
    Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas40-04lt1bas40-04ldiode marking 04lt1g package+104l sot23 PDF

    Contextual Info: BAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


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    bas70-04lt1gbas7004lt1/d PDF

    Contextual Info: BAS70-04LT1G, SBAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas70-04lt1gsbas70-04lt1gaec-q101bas70-04lt1/d PDF

    BAS40-04LT1G

    Abstract: BAS40 Schottky Barrier Diodes
    Contextual Info: BAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


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    bas40-04lt1gbas40-04lt1/dbas40schottky barrier diodes PDF

    SBAS40-04LT1G

    Abstract: 04LT
    Contextual Info: BAS40-04LT1G, SBAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bas40-04lt1gsbas40-04lt1got-23o-236+2bas40-04lt1/d04lt PDF

    diode cg sot-23

    Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable


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    bas70-04lt1r14525bas7004lt1/d+1diode cg sot-23 PDF

    DIODE marking 04l

    Abstract: SUM110P04-04L c4038
    Contextual Info: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance


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    sum110p04-04lo-263s-61964-rev09-oct-06+2diode marking 04lc4038 PDF

    SUM110P04-04L

    Abstract: VOLTAGE-1000
    Contextual Info: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance


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    sum110p04-04lo-26318-jul-08voltage-1000 PDF

    SUM110N06-04L

    Contextual Info: SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0035 at VGS = 10 V 0.005 at VGS = 4.5 V • TrenchFET Power MOSFETS • New Low Thermal Resistance Package ID (A) 110 Available RoHS*


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    sum110n06-04lo-26308-apr-05 PDF

    SUM110N06-04L

    Abstract: s300-50
    Contextual Info: SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0035 at VGS = 10 V 0.005 at VGS = 4.5 V • TrenchFET Power MOSFETS • New Low Thermal Resistance Package ID (A) 110 Available RoHS*


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    sum110n06-04lo-26318-jul-08s300-50 PDF

    72437

    Contextual Info: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance


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    sum110p04-04lo-26308-apr-0572437 PDF

    SUM110N06-04L

    Contextual Info: SUM110N06-04L Vishay Siliconix New Product N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0035 at VGS = 10 V 0.005 at VGS = 4.5 V ID (A) • TrenchFET Power MOSFETS • New Low Thermal Resistance Package Available


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    sum110n06-04lo-26308-apr-05 PDF

    SQM110P04

    Contextual Info: SQM110P04-04L Vishay Siliconix Automotive P-Channel - 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) (Ω) at VGS = 10 V 0.0038 RDS(on) (Ω) at VGS = 4.5 V 0.0060 ID (A) • TrenchFET Power MOSFET


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    sqm110p04-04laec-q1012002/95/eco-263+3sqm110p04-04l-ge318-jul-08sqm110p04 PDF

    Contextual Info: SQM120N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET


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    sqm120n06-04l2002/95/ecaec-q101o-263+2sqm120n06-04l-ge318-jul-08 PDF