DETECTOR APD NEC Search Results

Lucent 1319

Contextual Info: Rev. B01 Jun/2003 ME7105 Power Management Chipset for APD Integrated Input Optical Power Detector Description ME7105 is a thick film hybrid chip consists of a PFM DC-DC step up converter which boost the input logic 5V power supply voltage up to 90 Volt for the

10G EML TOSA

Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
Contextual Info: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely

10G APD ROSA

Abstract: TOSA 10G DFB NEC TOSA 10G TOSA 1310 10G 10G APD TOSA 10G ROSA 1310 10G Photodiode, 1550nm, butterfly package detector apd nec 10G TOSA
Contextual Info: NEC ELECTRONICS FIBER OPTIC DEVICES — 2009 CONTENTS How we fit into the picture . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 PRODUCTS 10G DFB TOSA and PIN ROSA . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10G FP TOSA and MM PIN ROSA . . . . . . . . . . . . . . . . . . . . . . . . .

Lucent apd

Abstract: APD power supply LG1628AXA LG1600 OP11 OP21 STM-16 transimpedance amplifier 7.5 GHz lucent technologies W series op2a
Contextual Info: Preliminary Data Sheet January 1998 LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 kΩ transimpedance ■ Complementary 50 Ω outputs ■ Low noise ■ Ultrawide dynamic range ■ Single –5.2 V ECL power supply

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

APD bias gain

Abstract: avalanche photodiode bias LH0032
Contextual Info: Si APDs Type No. Low Temperature Coefficient Types, for 800 nm Range Dimensional Outline (P.46, 47)/ Window Material *1 Package /K T O -18 S6045-01 S6045-02 S6045-03 S6045-04 /K S6045-05 ® /K S6045-06 ® /K TO-5 TO-8 Effective '2 Effective Active Area

Si apd photodiode

Abstract: photodiode Avalanche photodiode APD FOR POWER G
Contextual Info: Si APDs Type No. Low Temperature Coefficient Types, for 800 nm Range Dimensional Outline (P.46, 47)/ Window Material *1 Package S6045-01 S6045-02 0 /K T O -18 S6045-03 S6045-04 /K TO-5 S6045-05 /K S6045-06 ® /K T O -8 Area Spectral Response Range

Photodetector 1550nm

Abstract: PT0236-6-FC PT0236-6-SC STM-16 apd photodetector photodetector apd dwdm
Contextual Info: 2.5Gb/s Receiver Module Description The 2.5 Gbits/s lightwave receiver module is for SONET OC-48 and SDH STM-16 telecommunications long haul application and highspeed data communication applications. The receiver converts received optical signals range of 1.2 m to 1.6 m wavelength into differential

avalanche photodiode ingaas ghz

Contextual Info: N EC ELECTRONI CS INC bZE ]> • b427S5S Ga 3 û l 3 1 Ô1S H N E C E DATA SHEET NEC PHOTO DIODE NDL5520C ELECTRON DEVICE 2 .5 Gb/s OPTICAL FIBER COMMUNICATIONS 050 Mm InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5520C is an InGaAs Avalanche Photodiode especially designed for a detector of 25 Gb/s optical fiber communication

Sensors PSD

Contextual Info: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches

LG1628AXA

Abstract: LG1600 LMC6082IM STM-16 1628B APD power supply OP291GS LOW NOISE HYBRID operational amplifier
Contextual Info: Preliminary Data Sheet January 1998 m l c r ö p i p f t r ö n i f ? aro un m i u u e i e u r u n i i ì yiuup Lucent Technologies Bell Labs Innovations LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 k£1 transimpedance

detector apd nec

Abstract: C11531E PX10160E STM-64
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

lucent LG1605

Contextual Info: Preliminary Data Sheet January 1998 microelectronics group Lucent Technologies Belt Labs Innovations LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 k£i transimpedance ■ Complementary 50 Q outputs

bfy 40

Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
Contextual Info: OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE May 2001 SAFETY INFORMATION ON THIS PRODUCT NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT

Contextual Info: N E C ELECTRONICS INC b 2 E ]> • ^ 5 7 5 2 3 oo3fiotfl T 5 b HINECE DATA SHEET NEC PHOTO DIODE N D L 5 1 0 0 ELECTRON DEVíCE 1 300 nm OPTICAL FIBER COMM UNICATIONS 4> 100 //m GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5100 is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission

Contextual Info: Preliminary Data Sheet January 1998 group Lucent Technologies Bell Labs Innovations LG 1628AX A SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 G bits/s ■ High gain: 5.8 k i l transim pedance ■ C om ple m e ntary 50 i l

C30902EH

Contextual Info: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This

receiver L16.2

Abstract: OD-J8671-HA01 G957 l16.2 H1940 HA01 OD-J8671-0A01 STM-16 detector apd nec sensitivity InGaAs APD 28 pin apd 2.5 g 1550nm
Contextual Info: OE HYBRID 2.48832 Gbps Receiver OD-J8671-0A01/HA01 OC-48 LR-1, LR-2, LR-3 STM-16 L-16. 1, L-16. 2, L-16.3 -1- Copyright C 1994-2001 NEC Corporation 11th September, 2001 Rev. 0.2, Preliminary - Contents - 1. PRODUCT

Contextual Info: m i c r o e l e c t r o n i c s group Preliminary Data Sheet October 1999 Lucent Technologies Bell Labs Innovations TTIA0110G 10 Gbits/s Transimpedance Amplifier Features Functional Description • High data rate The Lucent Technologies Microelectronics Group

S4315

Abstract: APD reverse bias stability C5331 Si apd photodiode 10NAX S2385 52384 kap06 Si apd photodiode rangefinder S2381
Contextual Info: Si APDs Type No. Low-bias Operation Types, for 800 nm Range Dimensional O utline (P.46, 47)/ W indow M a te ria l-1 Package S2381 Effective '3 Effective Active Area Active Size Area (mm) (mm2) Ô0.2 0.03 (J)0.5 0.19 (>1.0 0.78 <t>1.5 1.77 Spectral Response

C30902SH-DTC

Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
Contextual Info: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the

C30902EH

Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Contextual Info: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as

Selection guide

Abstract: United Detector Technology PSD
Contextual Info: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable

dl520

Contextual Info: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission