DECT REPEATER Search Results

DIP28

Abstract: PLCC44 ST5451 STLC5412 STLC5412FN STLC5412P STLC5464 STLC5465
Contextual Info: STLC5412 2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE PRELIMINARY DATA GENERAL FEATURES SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS MEETS OR EXCEEDS ETSI EUROPEAN STANDARD SINGLE 5V SUPPLY DIP28 AND PLCC44 PACKAGE

Edd 44

Abstract: audio transformer GCI DIP28 PLCC44 ST5451 STLC5412 STLC5412FN STLC5412P STLC5464 STLC5465
Contextual Info: STLC5412 2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE PRELIMINARY DATA GENERAL FEATURES SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS MEETS OR EXCEEDS ETSI EUROPEAN STANDARD SINGLE 5V SUPPLY DIP28 AND PLCC44 PACKAGE

Edd 44

Abstract: DIP28 PLCC44 ST5451 STLC5412 STLC5412FN STLC5412P STLC5464 STLC5465 dect scrambler
Contextual Info: STLC5412 2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE PRELIMINARY DATA GENERAL FEATURES SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS MEETS OR EXCEEDS ETSI EUROPEAN STANDARD SINGLE 5V SUPPLY DIP28 AND PLCC44 PACKAGE

Edd 44

Abstract: m51x DIP28 PLCC44 ST5451 STLC5412 STLC5412FN STLC5412P STLC5464 STLC5465
Contextual Info: STLC5412 2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE PRELIMINARY DATA GENERAL FEATURES SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS MEETS OR EXCEEDS ETSI EUROPEAN STANDARD SINGLE 5V SUPPLY DIP28 AND PLCC44 PACKAGE

dmo 365 r

Abstract: audio transformer GCI delay line 330ns 330ns ac step-up transformer winding awg Edd 44 NT 101 DIP28 PLCC44 ST5451
Contextual Info:  STLC5412 2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE PRELIMINARY DATA GENERAL FEATURES SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS MEETS OR EXCEEDS ETSI EUROPEAN STANDARD SINGLE 5V SUPPLY DIP28 AND PLCC44 PACKAGE

dmo 365 r

Abstract: RF MODULE CIRCUIT DIAGRAM dect Edd 44 NT 101 DIP28 PLCC44 ST5451 STLC5412 STLC5412FN STLC5412P
Contextual Info: STLC5412 2B1Q U INTERFACE DEVICE ENHANCED W ITH DECT MODE PRELIMINARY DATA GENERAL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER ■ SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS ■ MEETS OR EXCEEDS ETSI EUROPEAN STANDARD ■ SINGLE 5V SUPPLY . DIP28 AND PLCC44 PACKAGE

RF Repeater

Abstract: dect module sc14408 SC14408 DECT Transceiver dect module CR16 national dect module rf DECT RF MODULE LMX3161
Contextual Info: DECT & ISM 2.4GHz Solutions Based on National’s Silicon RTX-GAP Concept RTX-GAP is a Turn Key DECT product GAP compliant from RTX Telecom which consists of a complete handset and basestation design based on the latest National RF & baseband solutions, type approval

Contextual Info: STLC5412 2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE PR E LIM IN A R Y DATA GENERAL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER ■ SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS ■ MEETS OR EXCEEDS ETSI EUROPEAN STANDARD ■ SINGLE 5V SUPPLY

Contextual Info: DATA SHEET GaAs HJ-FET INTEGRATED CIRCUIT PG2255T6N 1.9 GHz POWER AMPLIFIER FOR DECT DESCRIPTION The μPG2255T6N is a GaAs MMIC for power amplifier for 1.9 GHz DECT use. This device originates from the μPG2250T5N for BluetoothTM Class 1, and is guaranteed for the performance at 1.9

dmo 365 rn

Contextual Info: STLC5412 2B1Q U INTERFACE DEVICE ENHANCED W ITH DECT MODE PRELIMINARY DATA GENERAL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER ■ SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS ■ MEETS OR EXCEEDS ETSI EUROPEAN STANDARD ■ SINGLE 5V SUPPLY ■ DIP28 AND PLCC44 PACKAGE

till 111

Abstract: 13J04 M44274 dmo 365 rb POWER BRIDGE APW 20 DB
Contextual Info: /= 7 * 7 /. S G S -IH O M S O N is a o ê i^ iL iiÊ T M o ii STLC5412 2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE PRELIMINARY DATA GENERALFEATURES • SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER ■ SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS . MEETS OR EXCEEDS ETSI EUROPEAN

Contextual Info: / T T SGS-IHOMSON * l i . M g[]MI[LI(§Ij»[](§S STLC5412 2B1Q U INTERFACE DEVICE ENHANCED W ITH DECT M ODE PR ELIM IN A R Y DATA G EN ER AL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER ■ SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS ■ MEETS OR EXCEEDS ETSI EUROPEAN

LO2 W AW counter

Abstract: dc cdi schematic diagram ali m56 compute voltage in kcl Edd 44 NT 101 DIP28 PLCC44 ST5451 STLC5412
Contextual Info: 7 7 SGS-THOMSON ‘•7#. M t g M I I L i !] » « STLC5412 2B1Q U INTERFACE DEVICE ENHANCED WITH DECT MODE PR ELIM IN A R Y DATA G EN ER AL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANSCEIVER ■ SUITABLE FOR ISDN, PAIR GAIN AND DECT APPLICATIONS ■ MEETS OR EXCEEDS ETSI EUROPEAN

MRA705

Abstract: BFR520 MSB003 BFR520 transistor
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. , radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low noise figure

nec 3012

Abstract: NEC 2705 2SC5288 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

MU 350

Abstract: IC 7443 datasheet nec 3012 NE68939 NE68939-T1 NE69039 74245 20 pin ic 74626 30057
Contextual Info: DATA SHEET SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE68939 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

transistor 2SC5288

Abstract: 74267 2SC5288 47828 IC 7443 datasheet ic 9435 MU 350 2SC5192 2SC5288-T1 2SC5289
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

S band 2-4GHz power amplifier

Abstract: DECT Transceiver LNA 2.4GHZ bluetooth wireless voice transceiver RF transceiver 2.4GHz 3161 LMX3163 LMX4168 2.4ghz amplifier RF Repeater
Contextual Info: Applications National Products – RF Solutions LMX3161 DECT Transceiver Residential • Cost-effective single chip baseband RESIDENTIAL • Single Chip RF solution for portable and fixed parts • Products ranging from standard to high-end SAW LC LNA 1.88 – 1.9GHz or 2.4GHz

ic sc 4145

Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339
Contextual Info: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

th 20594

Abstract: HA 17723 30976 1982U 22024U
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . (Unit: mm) FEATURES • P- 1 = 24 dBm TYP.

NEC 3358

Abstract: 3543 5995 MARKING T90 2SC5289 nec k 813 2SC5192 2SC5288 2SC5289-T1 U 1504
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

2SC5289

Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

VEGA

Abstract: DECT VEGA 1 dect VWS23112 vlsi technology inc automatic repeat request VLSI Technology VMAX/64
Contextual Info: Wireless Communications VWS23112 VEGA V M A X Combining Power and DECT Flexibility OVERVIEW F E AT U R E S Wireless Technology is revolutionizing the world of communications, and, as a leader in the fast-growing wireless market, VLSI is enabling a new generation of innovative

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S