DD 31 N 12 Search Results

TT 46 N 12

Abstract: tt 25 n powerblock EUPEC TT 105 N 12 TT56N EUPEC tt 18 n 14 TT46N EUPEC DD 105 N 16 L tt 36 n powerblock TT93N EUPEC tt 162 n 16
Contextual Info: European PowerSemiconductor and Electronic Company Marketing Information DD 31 N screwing depth max. 8,5 fillister head screw M5 x 11 Z4 - 1 marking 68 15,5 20 20 80 92 AK K A VWK February 1996 DD 31 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte

EUPEC DD 600 N K

Abstract: v0215
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 600 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 600 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Spitzensperrspannung

EUPEC DD 31 N 1200 k

Abstract: DD 31 N 800 K IEC749
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 540 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 540 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values

EUPEC DD 31 N 1200 k

Abstract: powerblock dd 31 EUPEC DD 31 tt 36 n powerblock powerblock tt 45 EUPEC tt 25 N 12
Contextual Info: blE J> m EU P EC 34D3Et17 D0D1237 370 M U P E C DD 31 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte_Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzenspannung non repetitive peak

Contextual Info: TOP VIEW REVISIONS DCN REV DESCRIPTION □ate ; DD 01 INITIAL RELEASE JEDEC VARIATION MODIFICATION 0 6 /0 9 /0 0 0 7 / 1 1/DD 3 T l£ B a i MIN A 1.30 A1 -31 ,36 .41 A2 ,65 .70 ,75 JEDEC VARIATION N r B AAF-1 NOM 1.40 MAX 1.50 17,00 BSC D □1 15,00 BSC E

Contextual Info: N AMER PHILIPS/DISCRETE fe,TE » • bbS 3 R 31 DD 3 Q 3 SS b 7 T « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and

R29B

Contextual Info: MP1230/31 DIE 12-Bit Microprocessor Compatible Double-Buffered Digital-to-Analog Converter CMOS Die Specifications J ja jX J \i\m Micro Power Systems ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings TA = 25°C Ordering Information V DD to G N D . 0 V, +1 7 V

thermoplastic

Contextual Info: A DATE CODE YY: YEAR 08~ j N j MM: M0NTH(01~12 DD: DAY(01~31) SPECIFICATION 1. Voltage and Current Rating: 12V A IA 2. Contact resistance: 30m0 MAX. J. Insulation resistance: I00MQ MIN. 0 DC500V 4. Withstand voltage: 500VAC for 1min. 5. Insertion Force: 3Kgf MAX.

C127

Abstract: ac127 C127F IEC134
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bb53^31 DD i n 'a? 6 1 C127 S E R IE S l T THYRISTORS The C127 series devices are glass-passivated thyristors featuring alloy bonding, thus being particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching.

Contextual Info: 85 _n? OO o i_n 6 ±0.1 LO cm ' 31 x 2.54 - 7 8 .7 4 3 - 0 .4 02 .5 +W vO LH M CSÎ Z Dd n«zwz a \Anforderunqsstufe class i iNtj3 i ö □b c i_n xxxx \ Ident-Nr. csT ? m " I □otum date contact layout BestückungspiQn / 32 31 30 29 28 2 7 26 25 24 23 22 21 2 0 1 9 18 1 7 ,1 6 15 14 13 12 11 10 9

EUPEC DD 31

Contextual Info: EUPEC blE D • 34G3ET? 00G1237 370 ■iUPEC DD 31 N Elektrische Eigenschaften Electrical properties H ö ch stzu lä ssig e W erte M axim um rated values P e rio d isch e repetitive peak reverse S p itze nspe rrspa nnung voltage Stoß spitzenspannun g non repetitive peak

Contextual Info: UNCONTROLLED DOCUMENT L DD —A 5 0 0 2 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±Q.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C

Contextual Info: UNCONTROLLED DOCUMENT L DD —A 5 0 0 6 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±0.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C

Contextual Info: UNCONTROLLED DOCUMENT L DD —A 5 0 0 3 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±0.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C

Contextual Info: bTE N AMER P H I L I P S / D I S C R E T E » bfc.5 3 R 31 DD 3 2 5 M2 bbfl * A P X Philips Semiconductors Product specification CATV amplifier module FEATURES g BGY887B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input

Contextual Info: TOP VIEW REVISIONS DCN REV DESCRIPTION DD IN ITIA L RELEASE 0 6 /0 9 /0 0 □ate; 01 JEDEC V AR IA TIO N MODIFICATION 0 7 / 1 1 /D D 3 T l£ B a i MIN A 1.30 A1 A2 JEDEC VARIATION N r B AAF-1 NOM MAX 1.40 1.50 -31 ,36 .41 ,65 .70 ,75 D 17,00 BSC □1 15,00 BSC

dd 127 dd 127 d

Contextual Info: Rectifier Diode Modules Type V rrm I frmsm Ifsm V A VRSM = VRRM A 10 ms, + 100 V ^vjmax J i2dt A2s 10ms, •103 rT I fAVM^c V TO A/°C V mQ tvj = tij = ^vj max max RthJC RfhCK tvj max °c/w °C /W °C outline 180° el sin Baseplate = 20 mm DD 31 N 800.1600

Contextual Info: NEC ¿{PD77C25, 77P25 1. PIN FUNCTIONS 1.1 Pin Functions for Normal Operation Pin Pin N um ber Designation I/O Function 28-pin Plastic DIP, 32-pin Plastic SO P 44-pin Plastic QFJ 28-pin Ceramic DIP 28 V dd GND 14 V p p Note 1 31 1 32 44 15 21 16 22 2 2 —

Contextual Info: BALL PAD CORNER TOP VIEW REVISIONS DCN REV D ESC R IPT IO N DD INITIAL R E L E A S E 3 T l£ B a i A A1 A2 □a t e ; APPROVED 0S/02/00 JEDEC VARIATION MIN AAF-1 NOM MAX 1.30 1.40 1.50 -31 .36 .41 ,65 .70 ,75 D □1 13,00 BSC E 13,00 BSC El 11,00 BSC N r B

Contextual Info: S 1 3A 31 21 / 9 0 / 9 B v A3a N D a °a a o a i I 3 3 Z I S _ 'N O IS S IN d S d N 311IdM in O H U M 0 3 S n 39 IO N O inO H S ONV a 3 1 V d 0 d d 0 3 N I X310IAJ 0 1 AdV_L3IddO dd S I 1VH 1 NOIlVlAldOdNI S N IV 1 N 0 0 DNIMVHO S IH I Z dO I •ON 133H S

Contextual Info: A A l BAUj pa d c o bn br TOP VIEW REVISIONS DCN REV D ESC R IPT IO N DD INITIAL R E L E A S E S □a t e ; JEDEC VARIATION T M IB □ A A1 AZ NOM MAX 1.30 1.40 1.50 .31 .36 .41 .65 .7D .75 9.DO BSC E 11.00 BSC El 9-DO BSC MD ME 10 3 ID 3 N 1 Da 3 e 1.00 BSC

50hz sine oscillator

Abstract: 8015 oscillator 208E 213B
Contextual Info: APPLICATION REVISIONS NEXT ASSY USED ON FINAL 6 6 0 0 -3 8 REV DESCRIPTION DATE U N IT WAS DASH Ol APPROVED AWB 9/I8/00 8015 DUPLICATE DRAWING DD NOT REVISE REV SHEET UU ¿*5 Ub L7 ¿4-8 1*9 50 REV SHEET 20 2I 22 23 ZU 25 26 27 28 29 30 31 32 33 3Z+ 35 36 37 38 39 UO U\

z9my

Contextual Info: 32 31 29 30 27 28 26 25 V 24 23 22 A CD 19 20 21 SR 0 . 2 T A N G E N T TO R 1.58 0 . 2 5 MAX F L A T P E R M I S S I B L E M 16 15 14 T 2X R 1.58 H dD 1.03 ±0.02 A F T E R P L A T I N G T SYMBOL DEFINITION TOTAL NO. A DIMENSION WITHOUT OF AN INSPECTION REPORT

101uF

Contextual Info: 4 2 3 1 NOTES 31 . 1 9 MAX 1 . a*»« A * ± . A M P « A « . t & 1 0 8 - 5 4 0 H ^ m - r * . CIRCUIT C DD 1. T H E S E PRODUCTS CONFORM AMP 5PEC 108-5401. No. A > *4 A ^ material : iw^Trrssa'tttti^ir j.-'U =7 ^ : Ä 3> ? H O U S I N G :t h e r m o p l a s t e c