DD 31 N 12 Search Results

EUPEC DD 600 N K

Abstract: v0215
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 600 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 600 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Spitzensperrspannung

EUPEC DD 31 N 1200 k

Abstract: DD 31 N 800 K IEC749
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 540 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 540 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values

Contextual Info: N AMER PHILIPS/DISCRETE fe,TE » • bbS 3 R 31 DD 3 Q 3 SS b 7 T « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and

R29B

Contextual Info: MP1230/31 DIE 12-Bit Microprocessor Compatible Double-Buffered Digital-to-Analog Converter CMOS Die Specifications J ja jX J \i\m Micro Power Systems ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings TA = 25°C Ordering Information V DD to G N D . 0 V, +1 7 V

EUPEC DD 31

Contextual Info: EUPEC blE D • 34G3ET? 00G1237 370 ■iUPEC DD 31 N Elektrische Eigenschaften Electrical properties H ö ch stzu lä ssig e W erte M axim um rated values P e rio d isch e repetitive peak reverse S p itze nspe rrspa nnung voltage Stoß spitzenspannun g non repetitive peak

Contextual Info: UNCONTROLLED DOCUMENT L DD —A 5 0 0 2 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±Q.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C

Contextual Info: UNCONTROLLED DOCUMENT L DD —A 5 0 0 6 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±0.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C

Contextual Info: UNCONTROLLED DOCUMENT L DD —A 5 0 0 3 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±0.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C

Contextual Info: UNCONTROLLED DOCUMENT L DD —A 5 0 0 4 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±0.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C

Contextual Info: bTE N AMER P H I L I P S / D I S C R E T E » bfc.5 3 R 31 DD 3 2 5 M2 bbfl * A P X Philips Semiconductors Product specification CATV amplifier module FEATURES g BGY887B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input

101uF

Contextual Info: 4 2 3 1 NOTES 31 . 1 9 MAX 1 . a*»« A * ± . A M P « A « . t & 1 0 8 - 5 4 0 H ^ m - r * . CIRCUIT C DD 1. T H E S E PRODUCTS CONFORM AMP 5PEC 108-5401. No. A > *4 A ^ material : iw^Trrssa'tttti^ir j.-'U =7 ^ : Ä 3> ? H O U S I N G :t h e r m o p l a s t e c

MP1230BD

Abstract: P1230 Wr1c
Contextual Info: MP1230/31/32 Microprocessor Compatible Double-Bu fared 12-Bit Digital-to-Analcg Converter Ä M icro Power System s FEATURES • Lower Data Bus Feedthrough @ CS = 1 • Stable, More Accurate Segmented DAC Approach • Ultra Stable - 0.2 ppm/°C Linearity Tempco

QML-38535

Abstract: 320C80-50 17306A TIL Display SMD AH MRI circuit xxmx
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA REV SHEET 55 56 57 58 59 60 61 62 63 64 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV SHEET REV

260-pin

Contextual Info: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

1151a1

Contextual Info: 56 12 34 1 1234251 1 567839ABCDEBD69FBD33C3 3 1 1 3 1  39!1!" 3 1 .1 .80A1 F1 1 511 6551 51 BCD1 -F461 .1 .80A1 1 751 F561 561 51 51 65451 51 261 BCD81 9F1 1 95-1 561 61 91 691 :F1

Contextual Info: ST90E40 ST90T40 S G S -T H O M S O N G l •u 16K EPROM HCMOS MCU WITH EEPROM, RAM AND A/D CONVERTER ■ Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 500ns 12MHz internal ■ Internal Memory: EPROM 16Kbytes

SOJ32P-3.0

Abstract: TC55B329 TC55B329J DD313
Contextual Info: TOSHIBA TC55B329P/J-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM D e s c rip tio n The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

15FP

Abstract: DOR31
Contextual Info: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when VDDQ=2.5V. • Supports 1 0O-MHz bus for Pentium and PowerPC operations with zero wait states

Contextual Info: PIC16C52 M ic r o c h ip EPROM-Based 8-Bit CMOS Microcontroller ’ in Diagrams Feature Highlights Program Memory Data Memory I/O 384 25 12 PDIP, SOIC Vss RB0 ►E-i ►E2 -L * ►C4 -o -Ce RB1 RB2 ►Co RA2 High-Performance RISC CPU RA3 • Only 33 single word instructions to learn

p1230

Abstract: T P1230 TO P1230 MP1232HN
Contextual Info: MP1230/31/32 i M i C c r o j ^ f l D p r o c e s Compatible scroprocessor o r Double-Buffered 12-Bit Digital-to-Analog Converter FEATURES • Lower Data Bus Feedthrough @ CS = 1 • Stable, More Accurate Segmented DAC Approach • Ultra Stable 0.2 ppm/°C Linearity Tempco

sample codes of PIC12C508

Abstract: PIC12C508 assembly language for pic 2c508a PIC12C509 source code sleep 12c508 POTENTIOMETER HCS3Q1 12C508 wake up from sleep 2C508 transistor C509
Contextual Info: P I C 12 C 5 X X H A lC E tO C H l^ 8-Pin, 8-Bit CMOS Microcontroller Devices included in this Data Sheet: - EXTRC: External low-cost RC oscillator • PIC12C508 • PIC12C508A - XT: Standard crystal/resonator • PIC12C509A - LP: Power saving, low frequency crystal

DS30190

Contextual Info: M PIC16C5X ic r o c h ip EPROM/ROM-Based 8-Bit CMOS Microcontroller Series • 12-bit w ide instructions Devices Included in this Data Sheet: PIC16C52 • 8-bit w ide data path PIC16C54S • Seven or eight special function hardware registers PIC16CR54S

HV93

Abstract: HV94 HV97 HV98
Contextual Info: ^ HV93/HV94 HV97/HV98 Supertex inc. Die S p e cifica tio n s HV93 Pad Function HV94 Pad Function HV97 Pad Function HV98 Pad Function 1 HVOUT1 2 3 4 HV0UT2 HVo u t3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34

Contextual Info: !" # !" # !" # !" # $$$$$%!#&!% $$$%!#&!% $$$$$%!#&!% $$$$%!#&!% ' ' ( *+&,-.&/,&#,0&. .!*12 .!* " /-1+! .!*12 .!* " &%-1+! $-3*+!, !" # " #3-. !" # $$$$$%!#&!% !" # $$$%!#&!% !" # 4 %!#&!% $-3*+!, !" # %%!31+2" #3-. !" # $$$$$%!#&!% !" # $$$$%!#&!% !" #