DD 152 N Search Results

Xicor 28C010

Abstract: 28C010-200 28C010-120 28C010-150 XM28C010-25 28C010-250 28C010H-120 28C010H-150 28C010H-200 28C010H-250
Contextual Info: - 152- 2 8 C O 1 O m & ít * m sm cc> X 4 A « TAAC max ns TCAC max (ns) TOH tax (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (ibA) VIL max (V) 1 VIH min (V) & ii / m £ Ci tax (pF) V O L / I VOL max (V/mA) mæ V O H / I VOH min (V/mA) Co max (pF)

143431

Contextual Info: 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. 19 RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. , 6 4 5 3 2 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS 00 GP DE SC RI PT IO N J ACK5CREW 4-40 REL -1 THRU -1 1 T5 l 2 JULOl DD P 2 OVERMOLD COLOR : GRAY

Contextual Info: KS88C9408 MICROCONTROLLER ELECTRICAL DATA ELECTRICAL DATA Table 15-1. Absolute Maximum Ratings T a = 25°C Parameter Symbol Conditions Rating Unit Supply voltage VDD - - 0 . 3 to + 7 .0 V Input voltage V|N - —0.3 to V d d + 0.3 V O utput voltage Vo - —0.3 to V d d + 0.3

3052a

Abstract: boe vfd LC6512 LC866648 LC866216A
Contextual Info: SANYO SEMICONDUC TOR CORP b3E D ? ^ ? Q 7 h GDlOñOE TfiT • TSAJ Continued from previous page Packtg* > s sacks CycJs une iWM - t o « M u n i. ■ ■ ¡■ ■ IllH ■■■■■ m ■ ■ ■ ■ ■ ■ - 32 768 x 8 512 x 8 128 1.0 10 mA LC86E5032V

APT8020B2LL

Abstract: APT8020LLL
Contextual Info: APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: T iF N W A/L-Tfoi M<U€ 512 Megabit CMOS 3.3V EDO DRAM High Density Memory Device 256 M egabit CMOS 3.3V EDO DRAM 128 M egabit c m o s 3.3 V e d o d r a m D A T , / m i c r o s y s t e m s Ls&WSWS PRELIMINARY DESCRIPTION: The / H - D s m n s series is a family of interchangeable memory

IRV60

Abstract: 5MO 165 IRV200W IRH150W IRH300W IRV300W IRV500 IRH200 IRV500L IRH100
Contextual Info: = j g g r .= = - P C N R ESISTO R S= Compliance n HIGH POWER TYPE METAL CLAD WIRE-WOUND RESISTORS m IRH, IRV Shape & Dimensions mm A AA IR H 6 0 -IR H 1 5 0 x‘! 10 (IRH60:13) * VH » '& g L2 °'81^ / g \ \ A 2 5 l 12.5 = 15 10_ / IR H 2 0 0 -IR H 5 0 0

STE38NB50F

Contextual Info: STE38NB50F N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET TYPE STE38NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

STE38NB50

Contextual Info: STE38NB50 N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET TYPE STE38NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

E38NB50

Abstract: STE38NB50 e38n
Contextual Info: STE38NB50 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE ST E38NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STW38NB20

Contextual Info: STW38NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STW38NB20 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.065 Ω 38 A TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■

940-009, 941-009, 942-009

Abstract: dda 009
Contextual Info: Sav-Con connector savers PATT 105 and PATT 602 940-009, 941-009, 942-009 Bayonet Coupling 940-009 GENERAL DUTY, 941-009 ENVIRONMENTAL AND 942-009 HIGH RELIABILITY How To Order Sample Part Number 94 L Series 94 Class 0 = General Duty 1 = Environmental 2 = High Reliability

Contextual Info: D E N S E -P A C m i c r o s V s r ~m s /H -D & n s u s High Density Memory Device 512 Megabit CM OS 3.3V EDO DRAM 256 Megabit CM OS 3.3V EDO DRAM 128 Megabit CM OS 3.3V EDO DRAM PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The/fi-7 e«JM series is a family of interchangeable memory

JRC 4580

Abstract: 4580 D JRC 4580 jrc IC JRC 3860 3860 jrc jrc 3860 84 jrc regulator NJU6463 2060 JRC jrc 2060
Contextual Info: 4 NJ U 6 4 6 3 P R E L I M I NARY 1 6 —C H A R A C T E R DOT 3 - L I NE MATRIX LCD CONTROLLER GENERAL DESCRIPTION The NJU6463 is a Dot Matrix LCD controller driver for 16-character 3-line with icon display in single chip. It contains voltage converter and regulator, bleeder

10007

Abstract: capacitor 560 pF capacitor
Contextual Info: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization

Contextual Info: IRFS340A A dvanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V ■ Lower RDS(ON) : 0.437 £1 (Typ.)

Contextual Info: IRFS150A A dvanced Power MOSEET FEATURES B VDSS - 100 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 ^ ^ • Lower Input Capacitance lD = 31 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V

Contextual Info: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00

Contextual Info: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P p o w e r g a in a n d n o is e f i g u r e -• U L T R A W ID E B A N D : 5 0 M H z to 3 G H z vs. FREQUENCY

CL 2181

Abstract: 30 Pinout panel lcd v4nc COM63
Contextual Info: SED1191 CMOS LCD 64-COMMON DRIVER • DESCRIPTION The SED1191 is a dot matrix LCD common row driver for driving high-capacity LCD panel at duty cycles higher than 1/64. The LSI uses two serially connected, 32-bit shift registers to hold the display data, and level

JRC 4580

Abstract: 4580 D JRC 4580 jrc NJU6463 jrc 2060 2060 JRC E.A. JC JRC 2100 jrc 3860 BS 4377
Contextual Info: N UU 64 -6 3 PRELIMINARY 16 - C H A R A C T E R DOT 3 - L INE MATRIX LCD CONTROLLER • GENERAL DESCRIPTION .The NJU6463 is a Dot Matrix LCD controller driver for 16-character 3-line with icon display in single chip. It contains voltage converter and regulator, bleeder

LA 7555

Abstract: 7555C
Contextual Info: * u m , 1 9-0119; Rev. 0; 3 /9 3 J V \Æ X A J V \ +3V, 8 -B it A D C w ith 1\iA P o w e r-D o w n The MAX152 is DC and dynamically tested. Its |iP inter­ face appears as a memory location or input/output port that requires no external interface logic. The data outputs use