DD 152 N Search Results

Contextual Info: 3 THIS DRAWING I S UNPUBLISHED. O RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 REVISIONS ALL RIGHTS RESERVED. DESCRIPTION RELEASE -1, -2, -3 DATE DWN APVD 08MAR04 TS DD D 152 REF H jjH m n r r JSk ñ t H ;H ;A ; i L 5 LABEL OVERMOLLEL

M14C04

Contextual Info: M14C04 DD M14C04 Die Description PRODUCT • WAFER SIZE M14C04 152 mm 6 inches ■ DIE IDENTIFICATION M14C04KA_R ■ DIE SIZE (X x Y) 1465 x 1585 µm ■ SCRIBE LINE 101.6 x 101.6 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)

M14C32

Abstract: 99344
Contextual Info: M14C32 DD M14C32 Die Description PRODUCT • WAFER SIZE M14C32 152 mm 6 inches ■ DIE IDENTIFICATION M14C32KA_R ■ DIE SIZE (X x Y) 2040 x 2355 µm ■ SCRIBE LINE 100.5 x 101.7 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)

M14C32

Contextual Info: M14C32 DD M14C32 Die Description PRODUCT • WAFER SIZE M14C32 152 mm 6 inches ■ DIE IDENTIFICATION M14C32KA_R ■ DIE SIZE (X x Y) 2040 x 2355 µm ■ SCRIBE LINE 100.5 x 101.7 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)

M14C16

Abstract: X2375
Contextual Info: M14C16 DD M14C16 Die Description PRODUCT • WAFER SIZE M14C16 152 mm 6 inches ■ DIE IDENTIFICATION M14C16KA_R ■ DIE SIZE (X x Y) 1390 x 2375 µm ■ SCRIBE LINE 101.8 x 102.4 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI ■ Die Identification (at the position shown in Figure 1)

Xicor 28C010

Abstract: 28C010-200 28C010-120 28C010-150 XM28C010-25 28C010-250 28C010H-120 28C010H-150 28C010H-200 28C010H-250
Contextual Info: - 152- 2 8 C O 1 O m & ít * m sm cc> X 4 A « TAAC max ns TCAC max (ns) TOH tax (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (ibA) VIL max (V) 1 VIH min (V) & ii / m £ Ci tax (pF) V O L / I VOL max (V/mA) mæ V O H / I VOH min (V/mA) Co max (pF)

Contextual Info: HVC Series - High Voltage Capacitors Holy Stone Multilayer Ceramic Chip Capacitors [ High Voltage NP0 and X7R Capacitors ] HVC Series Holy Stone high voltage products are designed and manufactured to meet the general requirements of international standards. The product offering is well suited for commercial and industrial applications and

143431

Contextual Info: 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. 19 RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. , 6 4 5 3 2 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS 00 GP DE SC RI PT IO N J ACK5CREW 4-40 REL -1 THRU -1 1 T5 l 2 JULOl DD P 2 OVERMOLD COLOR : GRAY

Contextual Info: KS88C9408 MICROCONTROLLER ELECTRICAL DATA ELECTRICAL DATA Table 15-1. Absolute Maximum Ratings T a = 25°C Parameter Symbol Conditions Rating Unit Supply voltage VDD - - 0 . 3 to + 7 .0 V Input voltage V|N - —0.3 to V d d + 0.3 V O utput voltage Vo - —0.3 to V d d + 0.3

TFK S 186 P

Abstract: tfk 138 JUPD70236 TFK S 186 TFK 162 -12 mrd 148 D70236A tfk 189 p
Contextual Info: NEC /¿PD70236A 15. ELECTRICAL SPECIFICATIONS Available Electrical Specifications - - _ _ _ _ _ V dd = 5 V ±10% V dd = 3.6 to 4.5 V V dd = 2.7 to 3.6 V Remarks 15.1 HPD70236A-10 HPD70236A-12 HPD70236A-16 HPD70236A-20 T a = -40 to +85 °C

Contextual Info: HVC Series - High Voltage Capacitors Holy Stone Multilayer Ceramic Chip Capacitors [ High Voltage NP0 and X7R Capacitors ] HVC Series Holy Stone high voltage products are designed and manufactured to meet the general requirements of international standards. The product offering is well suitable for commercial and industrial applications and

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT li PD16732A, 16732B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES The n PD16732A, 16732B are a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of

Contextual Info: 7 T H IS DRAW ING COPYRIGHT IS U N P U B L IS H E D . - RELEASED BY TYCO ELECTRON ICS CORPORATION. FO R 5 6 4 2 3 PU BLICATIO N A L L R IG H T S RESERVED. LOC D IS T GP 00 REVISIONS LTR 01 DATE RELEASED PER EC 0S 13 - 0 4 4 0 - 0 4 REVISED PER E C O -1 0 -0 0 0 4 4 4

3052a

Abstract: boe vfd LC6512 LC866648 LC866216A
Contextual Info: SANYO SEMICONDUC TOR CORP b3E D ? ^ ? Q 7 h GDlOñOE TfiT • TSAJ Continued from previous page Packtg* > s sacks CycJs une iWM - t o « M u n i. ■ ■ ¡■ ■ IllH ■■■■■ m ■ ■ ■ ■ ■ ■ - 32 768 x 8 512 x 8 128 1.0 10 mA LC86E5032V

APT10026L2FLL

Abstract: DSA003654
Contextual Info: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8020B2LL

Abstract: APT8020LLL
Contextual Info: APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8020lllg

Abstract: APT8020B2LL
Contextual Info: APT8020B2LL G APT8020LLL(G) 800V 38A 0.200Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. B2LL POWER MOS 7 R MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

Contextual Info: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

ericsson 10007

Abstract: c 2575 gs
Contextual Info: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface

7.83 hz

Contextual Info: NJ L J6 4 6 3 P R E L I M I NARY 1 6 —C H A R A C T E R DOT 3 - L I NE MATRIX LCD CONTROLLER DRIVER • PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJU6463 is a Dot Matrix LCD controller driver for 16-character 3-line with icon display in single chip. It contains voltage converter and regulator, bleeder

APT8020B2FLL

Abstract: APT8020LFLL
Contextual Info: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON