DD 152 N Search Results

M14C04

Contextual Info: M14C04 DD M14C04 Die Description PRODUCT • WAFER SIZE M14C04 152 mm 6 inches ■ DIE IDENTIFICATION M14C04KA_R ■ DIE SIZE (X x Y) 1465 x 1585 µm ■ SCRIBE LINE 101.6 x 101.6 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)

Xicor 28C010

Abstract: 28C010-200 28C010-120 28C010-150 XM28C010-25 28C010-250 28C010H-120 28C010H-150 28C010H-200 28C010H-250
Contextual Info: - 152- 2 8 C O 1 O m & ít * m sm cc> X 4 A « TAAC max ns TCAC max (ns) TOH tax (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (ibA) VIL max (V) 1 VIH min (V) & ii / m £ Ci tax (pF) V O L / I VOL max (V/mA) mæ V O H / I VOH min (V/mA) Co max (pF)

143431

Contextual Info: 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. 19 RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. , 6 4 5 3 2 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS 00 GP DE SC RI PT IO N J ACK5CREW 4-40 REL -1 THRU -1 1 T5 l 2 JULOl DD P 2 OVERMOLD COLOR : GRAY

Contextual Info: KS88C9408 MICROCONTROLLER ELECTRICAL DATA ELECTRICAL DATA Table 15-1. Absolute Maximum Ratings T a = 25°C Parameter Symbol Conditions Rating Unit Supply voltage VDD - - 0 . 3 to + 7 .0 V Input voltage V|N - —0.3 to V d d + 0.3 V O utput voltage Vo - —0.3 to V d d + 0.3

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT li PD16732A, 16732B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES The n PD16732A, 16732B are a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of

3052a

Abstract: boe vfd LC6512 LC866648 LC866216A
Contextual Info: SANYO SEMICONDUC TOR CORP b3E D ? ^ ? Q 7 h GDlOñOE TfiT • TSAJ Continued from previous page Packtg* > s sacks CycJs une iWM - t o « M u n i. ■ ■ ¡■ ■ IllH ■■■■■ m ■ ■ ■ ■ ■ ■ - 32 768 x 8 512 x 8 128 1.0 10 mA LC86E5032V

cxd1135

Abstract: SM5841BS CXD1125 Sony CXD1135 cxd1130 SONY cxd1130 SM5841AS ad1865 yamaha ic YM3623
Contextual Info: rupe NIPPON PRECISION CIRCUITS INC. S M 5 8 4 1 A /B Audio Multi-function Digital Filter OVERVIEW The SM5841A/B are digital filters for digital audio, fabricated in Molybdenum-gate CMOS. The SM5841A/B feature selectable digital deemphasis, digital attenuation and soft mute functions. The serial data format uses

APT10026L2FLL

Abstract: DSA003654
Contextual Info: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8020B2LL

Abstract: APT8020LLL
Contextual Info: APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8020lllg

Abstract: APT8020B2LL
Contextual Info: APT8020B2LL G APT8020LLL(G) 800V 38A 0.200Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. B2LL POWER MOS 7 R MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

Contextual Info: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8020B2FLL

Abstract: APT8020LFLL
Contextual Info: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

NJU6463

Abstract: 2 line 16character lcd display 1090
Contextual Info: IMJ U 6 4- 6 3 PRELIMINARY 16-CHARACTER 3 - L I N E DOT M A T R I X LCD CONTROLLER • GENERAL DESCRIPTION .The NJU6463 is a Dot Matrix LCD controller driver for 16-character 3-line with icon display in single chip. It contains voltage converter and regulator, bleeder

STE38N60

Abstract: STH12N60
Contextual Info: STE38N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE38N60 600 V < 0.15 Ω 38 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH12N60 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER

34992

Abstract: SSC5100 F232-10 pinpad 78568
Contextual Info: S-n 0 S SYSTEMS INC 5bE D • 7 cï 3 S tl D c1 G ODI Sb b SSC5000 'Ib? M S MO Series 0.8u HIGH SPEED CMOS STANDARD CELL SERIES° 7 ■ DESCRIPTION The S-MOS SSC5000 standard cell series is a 0.8 micron drawn family of standard cell circuits. It is manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal N-well CMOS process. It Is comprised of 20

IRV60

Abstract: 5MO 165 IRV200W IRH150W IRH300W IRV300W IRV500 IRH200 IRV500L IRH100
Contextual Info: = j g g r .= = - P C N R ESISTO R S= Compliance n HIGH POWER TYPE METAL CLAD WIRE-WOUND RESISTORS m IRH, IRV Shape & Dimensions mm A AA IR H 6 0 -IR H 1 5 0 x‘! 10 (IRH60:13) * VH » '& g L2 °'81^ / g \ \ A 2 5 l 12.5 = 15 10_ / IR H 2 0 0 -IR H 5 0 0

STE38NB50F

Contextual Info: STE38NB50F N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET TYPE STE38NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

STE38NB50

Contextual Info: STE38NB50 N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET TYPE STE38NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

E38NB50

Abstract: STE38NB50 e38n
Contextual Info: STE38NB50 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE ST E38NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STW38NB20

Contextual Info: STW38NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STW38NB20 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.065 Ω 38 A TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■

940-009, 941-009, 942-009

Abstract: dda 009
Contextual Info: Sav-Con connector savers PATT 105 and PATT 602 940-009, 941-009, 942-009 Bayonet Coupling 940-009 GENERAL DUTY, 941-009 ENVIRONMENTAL AND 942-009 HIGH RELIABILITY How To Order Sample Part Number 94 L Series 94 Class 0 = General Duty 1 = Environmental 2 = High Reliability

Contextual Info: IRFP250A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 32 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V