DD 128 TRANSISTOR Search Results

823B

Abstract: DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook
Contextual Info: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION Packaging & Case Information 84-Pin PLCC CASE 780A-01 ISSUE A FN SUFFIX 181-Pin PGA CASE 795A–02 ISSUE A HI SUFFIX 128-Pin QFP CASE 862A-02 ISSUE B DD SUFFIX 208-Pin QFP CASE 872A-01 ISSUE TBD DK SUFFIX 160-Pin QFP

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

S178A

Abstract: VIDEO PULSE GENERATOR
Contextual Info: S178A Video Pulse Generator DIP 28 The S 178 A is an MOS circuit using p-channel metal-gate-technology with enhancement and depletion transistors, featuring the following technical characteristics: The video pulse generator produces the sync, control, and erase signals required for the

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

t750

Abstract: ds 300 u810
Contextual Info: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration

2SC9013

Abstract: 2sc9013 transistor UM66T 2SC901 UM66T Series UM66 um66 music generator
Contextual Info: UM66T Series Simple Melody Generator Features • ■ ■ ■ ■ ■ 64-note ROM m em ory ■ 1.3V to 3.3V operating voltage and low power consum ption ■ Dynamic speaker can be driven with an external NPN transistor OSC. resistor is built-in One-shot m ode o r level-hold m ode can be selected

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

MGSF3441V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441V Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =78 mΩ (TYP)

Contextual Info: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold

Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23

Contextual Info: Communication ICs PCM codec 1C for digital cellular telephones BU8731KV The BU8731KV is a PCM codec IC developed for use with digital cellular telephones. It contains analog input / output features such as a 14-bit linear precision, |x / A-LAW codec, mic and speaker amplifiers, and switching transistor for the

Contextual Info: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency

TK5530H

Abstract: TK5550F
Contextual Info: Tem ic e5530 S e m i c o n d u c t o r s 128-Bit IDIC for Radio Frequency Identification Description The e5530 is part of a closed coupled identification system. It receives power from an RF transmitter which is coupled inductively to the IDIC . The frequency is

MSM10T0106

Abstract: MSM10T0055 MSM10T0209
Contextual Info: OKI_ January 1990 Preliminary Semiconductor_ _ _ _ _ _ _ _ _ _ _ _ _ MSM10T0000 1.0jim SEA-OF-GATES FAMILY GENERAL DESCRIPTION FEATURES Oki's MSM10T0000 Sea-of-Gates family is a performance enhanced, high-density product constructed from Oki's advanced 1.0|im drawn 0.85nm

Contextual Info: Tem ic e5530 S e m i c o n d u c t o r s 128 Bit IDIC for Radio Frequency Identification Description The e5530 is pan of a closed coupled identification system. It receives power from an RF transmitter which is coupled inductively to the IDIC®. The frequency is

johanson trim

Contextual Info: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m

C1904

Abstract: Transistor C1904 cl 740 DAC8840 DAC-8841 SOL-24 AD8842 AD8842AN AD8842AR r 256 d
Contextual Info: a FEATURES Low Cost Replaces 8 Potentiometers 50 kHz 4-Quadrant Multiplying Bandwidth Low Zero Output Error Eight Individual Channels 3-Wire Serial Input 500 kHz Update Data Loading Rate ±3 V Output Swing Midscale Preset, Zero Volts Out APPLICATIONS Automatic Adjustment

Variable resistor 10K ohm potentiometer

Abstract: Variable resistor 50K ohm
Contextual Info: o Increment/Decrement _ DUAL Dgital Potentiometer Prel i mi nary Technical Data AD5222 FEATURES 128 P osition, 2 C hannel P otentiom eter R eplacem ent 10K, 5 0 K, 100K, 1M Ohm V ery Low Power - 40 |iA Max ±2.7V Dual S upply O peration OR

3g Booster

Abstract: STE2010 8080 Parallel STE2002 STE20XX STE2001 STE2004
Contextual Info: Highly Integrated Ultra Low Power LCD Controller/Driver ICs STE20XX controller/driver family meets stringent portable terminal requirements STMicroelectronics has expanded its wide off-the-shelf components offer for portable communication terminals introducing

AD7376AN100

Contextual Info: ANALOG DEVICES ± 15 V Operation Digital Potentiometer AD7376* FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdow n: Less than 1 |iA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

15p10p

Abstract: PG-TO252-3 Tj-102
Contextual Info: SPD15P10P G SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 0.24 Ω ID -15 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking

10 35L W1

Abstract: philips components LED T-49-19-08 PCF84C270 PCF84C270P PCF84C270T PCF84C271 PCF84C271P PCF84C271T PCF84C470
Contextual Info: — — — — — PHILIPS INTERNATIONAL — — 34E D m ?llGäSfc. 0011553 7 B Philips Components PCF84C270/271/470 ^ ' n'oS Data sheet status Preliminary specification date of Issue November 1990 Single-chip 8-bit microcontrollers INTRODUCTION The PCF84C270, PCF84C271 and PCF84C470 CMOS