DD 128 TRANSISTOR Search Results

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

2SC9013

Abstract: 2sc9013 transistor UM66T 2SC901 UM66T Series UM66 um66 music generator
Contextual Info: UM66T Series Simple Melody Generator Features • ■ ■ ■ ■ ■ 64-note ROM m em ory ■ 1.3V to 3.3V operating voltage and low power consum ption ■ Dynamic speaker can be driven with an external NPN transistor OSC. resistor is built-in One-shot m ode o r level-hold m ode can be selected

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

Contextual Info: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold

Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23

Contextual Info: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency

TK5530H

Abstract: TK5550F
Contextual Info: Tem ic e5530 S e m i c o n d u c t o r s 128-Bit IDIC for Radio Frequency Identification Description The e5530 is part of a closed coupled identification system. It receives power from an RF transmitter which is coupled inductively to the IDIC . The frequency is

Contextual Info: Tem ic e5530 S e m i c o n d u c t o r s 128 Bit IDIC for Radio Frequency Identification Description The e5530 is pan of a closed coupled identification system. It receives power from an RF transmitter which is coupled inductively to the IDIC®. The frequency is

C1904

Abstract: Transistor C1904 cl 740 DAC8840 DAC-8841 SOL-24 AD8842 AD8842AN AD8842AR r 256 d
Contextual Info: a FEATURES Low Cost Replaces 8 Potentiometers 50 kHz 4-Quadrant Multiplying Bandwidth Low Zero Output Error Eight Individual Channels 3-Wire Serial Input 500 kHz Update Data Loading Rate ±3 V Output Swing Midscale Preset, Zero Volts Out APPLICATIONS Automatic Adjustment

Variable resistor 10K ohm potentiometer

Abstract: Variable resistor 50K ohm
Contextual Info: o Increment/Decrement _ DUAL Dgital Potentiometer Prel i mi nary Technical Data AD5222 FEATURES 128 P osition, 2 C hannel P otentiom eter R eplacem ent 10K, 5 0 K, 100K, 1M Ohm V ery Low Power - 40 |iA Max ±2.7V Dual S upply O peration OR

3g Booster

Abstract: STE2010 8080 Parallel STE2002 STE20XX STE2001 STE2004
Contextual Info: Highly Integrated Ultra Low Power LCD Controller/Driver ICs STE20XX controller/driver family meets stringent portable terminal requirements STMicroelectronics has expanded its wide off-the-shelf components offer for portable communication terminals introducing

AD7376AN100

Contextual Info: ANALOG DEVICES ± 15 V Operation Digital Potentiometer AD7376* FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdow n: Less than 1 |iA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

10 35L W1

Abstract: philips components LED T-49-19-08 PCF84C270 PCF84C270P PCF84C270T PCF84C271 PCF84C271P PCF84C271T PCF84C470
Contextual Info: — — — — — PHILIPS INTERNATIONAL — — 34E D m ?llGäSfc. 0011553 7 B Philips Components PCF84C270/271/470 ^ ' n'oS Data sheet status Preliminary specification date of Issue November 1990 Single-chip 8-bit microcontrollers INTRODUCTION The PCF84C270, PCF84C271 and PCF84C470 CMOS

AD5220

Abstract: AD5220BN10 MS-001 OP279 OP42 ad5220brm100
Contextual Info: AD5220–SPECIFICATIONS V = +3 V ؎ 10% or +5 V ؎ 10%, V = +V , V = 0 V, –40؇C < T < +85؇C unless DD A ELECTRICAL CHARACTERISTICS otherwise noted Parameter Symbol DD B Conditions DC CHARACTERISTICS RHEOSTAT MODE Specifications Apply to All VRs Resistor Differential NL2

TFC 718 S

Abstract: tfc 718 74151s
Contextual Info: O K I Semiconductor M S M 1 8 T 0 0 0 0 _ 1.0|im Sea of Gates Family for High-Performance, 5 Volt Applications DESCRIPTION O K I's M SM 18T0000 Sea of Gates fam ily is a high-perform ance, high-density sem icustom product using O KI's l.O^m drawn 0.85|im effective , two-layer metal which has been adapted for logic from

Contextual Info: BSL215P OptiMOS P2 Small-Signal-Transistor Product Summary Features VDS • Dual P-channel RDS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V VGS=-4.5 V 150 mW VGS=-2.5 V 280 ID -1.5 • Avalanche rated A PG-TSOP6 • Qualified according to AEC Q101

d1128

Abstract: layout diagram of microprocessor DAC8840FP DAC8840 DAC8840F DAC8840GBC DAC-8841 SOIC-24 c1490
Contextual Info: ANALOG DEVICES 8-Bit, Octal, 4-Quadrant Multiplying, CMOS TrimDAC DAC8840 FEATURES Replaces 8 Potentiometers 1 MHz 4-Quadrant Multiplying Bandwidth No Signal Inversion Low Zero Output Error Eight Individual Channels 3-W ire Serial Input 500 kHz Update Data Loading Rate

P2QFP100-GH-1420

Abstract: IR 1838 3v with 3 pins
Contextual Info: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with

D65842

Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications

Contextual Info: Preliminary n ^ ^ E MB Series E e G R E T IC O N 64,128, and 256 Channel Amplifier-Multiplexer Array Chips Introduction Key Features The R L0064/0128/0256M B fam ily o f integrated C M O S circuit chips is intended to provide flexible low -noise am plification

Contextual Info: S G S -T H O M S O N * ìJ i, R ílD Ig lM J ilL IÉ T riM lS a D fg g M 4 9 1 B SINGLE-CHIP VOLTAGE SYNTHESIS TUNING SYSTEM WITH 1 ANALOG CONTROL DESCRIPTION The M491B is a monolithic N-MOS LSI circuit in­ cluding a Floating-gate Non-Volatile Memory for

BMA16X16

Contextual Info: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with

Contextual Info: ANALOG DEVICES Increment/Decrement Digital Potentiometer AD5220 FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il Very Low Power: 40 jiA M ax Increm ent/D ecrem ent Count Control FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Mechanical Potentiom eter Replacement

Contextual Info: ANALOG DEVICES ± 1 5 V Operation Digital Potentiometer AD7376* FEATURES 128 Position P otentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdown: Less than 1 jjiA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation