DD 128 TRANSISTOR Search Results

823B

Abstract: DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook
Contextual Info: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION Packaging & Case Information 84-Pin PLCC CASE 780A-01 ISSUE A FN SUFFIX 181-Pin PGA CASE 795A–02 ISSUE A HI SUFFIX 128-Pin QFP CASE 862A-02 ISSUE B DD SUFFIX 208-Pin QFP CASE 872A-01 ISSUE TBD DK SUFFIX 160-Pin QFP

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

S178A

Abstract: VIDEO PULSE GENERATOR
Contextual Info: S178A Video Pulse Generator DIP 28 The S 178 A is an MOS circuit using p-channel metal-gate-technology with enhancement and depletion transistors, featuring the following technical characteristics: The video pulse generator produces the sync, control, and erase signals required for the

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

spp77n05

Abstract: Q67040-S4001-A2 BUZ 32 SMD
Contextual Info: BUZ 100 S SPP77N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 S 55 V

t750

Abstract: ds 300 u810
Contextual Info: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration

Contextual Info: *57 SGS-THOMSON iL iO M K I stp32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N 06LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

Contextual Info: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos fc flDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 £2 TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit A 7 b = 27 -C

2SC9013

Abstract: 2sc9013 transistor UM66T 2SC901 UM66T Series UM66 um66 music generator
Contextual Info: UM66T Series Simple Melody Generator Features • ■ ■ ■ ■ ■ 64-note ROM m em ory ■ 1.3V to 3.3V operating voltage and low power consum ption ■ Dynamic speaker can be driven with an external NPN transistor OSC. resistor is built-in One-shot m ode o r level-hold m ode can be selected

STP32N05L

Contextual Info: *57 TYPE STP32N05L STP32N 05LFI • • . ■ ■ . ■ ■ . SGS-THOMSON iL iO M K I stp32Nosl STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 50 V 50 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

BSL215C

Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 140 mW VGS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Super Logic level (2.5V rated) · Avalanche rated

Contextual Info: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V5 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration

Contextual Info: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V3 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration

BSL215C

Abstract: HLG09283 L6327
Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

BSL215C

Abstract: HLG09283 L6327
Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

MGSF3441V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441V Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =78 mΩ (TYP)

Contextual Info: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold

10147

Abstract: GE capacitor 2R13-6 G200
Contextual Info: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold