DC-M4 DIODE Search Results

SQD300BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） SQD300BA60 UL;E76102 （M） 108max 93±0.5 ● Low B EX 11.013.0 21.0 E 2-M4 x7.5 C 36.0max BX EX 29.0 2-M6 ×13 25.5max （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application

SQD300AA100

Contextual Info: TRANSISTOR MODULE SQD300AA100 UL;E76102 （M） 108max 93±0.5 4-φ6.5 ● Low B EX 11.013.0 21.0 E C B 2-M4 x7.5 36.0max BX EX 29.0 2-M6 ×13 25.5max （Applications） Moter Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application

Contextual Info: CC24_ _020N CN24_ _020N Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Dual Diode Modules 20 Amperes/300-600 Volts H J A B J C G M H J (3 TYP.) N - DIA. R - M4 THD (3 TYP.) L (2 TYP.) D Q Q K E F P CN24_ _020N, CC24_ _020N

NTE5742

Abstract: NTE5743
Contextual Info: NTE5742 & NTE5743 3 Phase Bridge Rectifier Modules Description: The NTE5742 and NTE5743 powerblock modules are designed for three−phase full wave rectification and contain six diodes connected in a three−phase bridge configuration. The mounting base of the

7272

Abstract: A three-phase diode bridge rectifier datasheet power circuit of three phase control rectifier rectifier three phase 150a ME60 ME600815 powerex ME60
Contextual Info: ME600815 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Modules 150 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge applications. The modules are isolated

C2E1

Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

MG200H1FL1A

Contextual Info: MG200H1FL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE — HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Collector is Isolated from Case. • With Built-in Free Wheeling Diodes. • High DC Current Gain : hpp=80 Min. (IC=200A) • Low Saturation Voltage: VcE(sat)“2V(Max.)

QCA50A

Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
Contextual Info: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V

600w switch mode power supply circuit diagram

Abstract: S8PS-10024CD S8VS-06024 S8VS-06024A S8VS-06024B S8VS-09024 S8VS-09024A VDE0160 VDE0806 UL1310
Contextual Info: Switch mode Power Supply S8VS Visible and Slim New Din Rail Power Supply • Ultra-compact size 40 (W x 95 (H) mm) (60-W Model) • Displayed on 3-digit, 7-segment LED shows many status (voltage, current etc.) of power supply. • Approved standards: UL508/60950, CSA C22.2 No.14/60950,

S172-12

Abstract: S172-5 172D S172D-12 S172D-5 172M4
Contextual Info: TELEDYNE RELAYS SERIES 172 CENTIGRID COMMERCIAL RELAY DPDT SERIES DESIGNATION RELAY TYPE 172 DPDT basic relay 172D DPDT relay with internal diode for coil transient suppression DESCRIPTION INTERNAL CONSTRUCTION The 172 Centigrid ® relay is an ultraminiature, hermetically sealed, armature relay for

DKR200AB60

Contextual Info: DIODE MODULE（NON-ISOLATED TYPE） DKR200AB60 DKR200AB60 is a high speed fast recovery dual diode module designed for high power switching application. DKR200AB60 is suitable for high frequency application requiring low loss and high speed control. ● High Speed Diode trr≦200ns

HF60T

Abstract: 600w 12v inverter circuit diagram 500W TRANSISTOR 500w inverter circuit diagram SPHD-001T-P0 semi catalog 10024a S8VM300 S8VM-15224C
Contextual Info: Switch Mode Power Supply S8VM 15/30/50/100/150/300/600/1,500-W Models CSM_S8VM_DS_E_12_1 Power Supply Featuring OMRON’s Unique, New Undervoltage Alarm Function with Compact Body Contributing to Machine Downsizing • New undervoltage alarm function assists in determining causes of errors (S8VM-@@@24A@/P@ only).

Contextual Info: Si GEC PLESS EY SEMICONDUCTORS DS4137-6.2 GP400LSS12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. TYPICAL KEY PARAMETERS VCES 1200V V c E ,a„ ^c(cont> ■ U P S. ■ A C And D C Servo Drive Amplifiers. 'c p k ,

IGD 001

Contextual Info: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

LMD18245

Abstract: 1500v chopper
Contextual Info: LMD18245 LMD18245 3A, 55V DMOS Full-Bridge Motor Driver Literature Number: SNVS110D LMD18245 3A, 55V DMOS Full-Bridge Motor Driver General Description Features The LMD18245 full-bridge power amplifier incorporates all the circuit blocks required to drive and control current in a

marking code 936b

Abstract: 927B marking
Contextual Info: 1SMB5926 thru 1SMB5956 Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Low inductance - Moisture sensitivity level: level 1, per J-STD-020

igbt 300V 30A

Abstract: 7MBR30NE060 Ac - Dc converter ic igbt 600V 30A
Contextual Info: 7MBR30NE060 IGBT Modules IGBT MODULE 600V / 30A / PIM Features • High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier

HFA80FA120

Abstract: IRFP250 k1 227 PD-20395
Contextual Info: Bulletin PD-20395 rev. A 01/02 HFA80FA120 HEXFREDTM Ultrafast, Soft Recovery Diode Features • • • • VR = 1200V VF typ = 2.6V IF(AV) = 80A trr (typ) = 25ns Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal

CM600HA-24A

Contextual Info: CM600HA-24A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD A-Series Module 600 Amperes/1200 Volts H G E F D J W - DIA. (4 TYP.) K y P Q E C E x N M L G C B A R U - THD. (2 TYP.) V -THD. (2 TYP.) S T

2x81-0045B

Abstract: 2x81-0045
Contextual Info: DSS 2x81-0045B IFAV = 2x80 A VRRM = 45 V VF = 0.64 V Power Schottky Rectifier VRSM VRRM V V 45 45 miniBLOC, SOT-227 B Type DSS 2x81-0045B Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5 TC = 75°C; rectangular, d = 0.5; per device

FD400R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

60N60C2D1

Abstract: 60N60C2 DI IGBT 60N60C2D1 C9VI
Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A

FZ800R12KF4

Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

VS-UFB280FA20

Contextual Info: VS-UFB280FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C • Low forward voltage drop