DC M9 FOOTPRINT Search Results

Contextual Info: IPP055N03L G Type IPB055N03L G  3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5.5 m9 ID 50 A 1) • Qualified according to JEDEC for target applications

smd diode marking A35

Contextual Info: IPP080N03L G Type IPB080N03L G  3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 8.0 m9 ID 50 A • Qualified according to JEDEC1) for target applications

Contextual Info: IPP034N03L G Type IPB034N03L G  3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 3.4 m9 • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications

Contextual Info: BSC046N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion VDS 100 V RDS on ,max 4.6 m9 ID 100 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: BSZ042N04NS G  3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.2 m9 • Optimized technology for DC/DC converters ID 40 A • Qualified according to JEDEC1) for target applications PG-TSDSON-8

R1028

Abstract: la1861 SM560Bs foxconn R1004 PU1A-12 C57021 Compal Electronics pu45a isl6247
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Intel portability uFCBGA/uFCPGA with ATI-RC300M+SB200 core logic 2003-07-10 3 3 REV:0.4 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

SF10402ML080C

Abstract: foxconn isl6247 R10141 Compal Electronics compal UFCBGA479 transistor c828 U/25/20/TN26/15/850/motorola transistor R711
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Intel portability uFCBGA/uFCPGA with ATI-RC300M+SB200 core logic 2003-07-10 3 3 REV:0.4 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

TPC8009H

Abstract: TPC8009 TPC8009-H transistor tpc8009
Contextual Info: TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High speed U-MOSIII TPC8009-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package ·

TPC8111

Contextual Info: TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8111 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

TPC8110

Contextual Info: TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC8110 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.)

S8104

Abstract: TPCS8104
Contextual Info: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

Contextual Info: TPC8015-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High speed U-MOSIII TPC8015-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package ·

TPC8010

Abstract: TPC8010-H
Contextual Info: TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High speed U-MOSIII TPC8010-H DC-DC Converters Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package · High speed switching

dc m9 footprint

Abstract: LDTC113YWT1G marking code m9
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC113YWT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

HD5888

Abstract: NEC C900 transistor C943 NEC c945 p 331 transistor NEC C923 transistor C935 LA1811 transistor c939 LA-1811 compal
Contextual Info: A B C D E LA-1811 1 1 Compal confidential 2 2 Schematics Document DT TRANSPORT or Prescott uFCPGA with ATI-RC300M+SB200 core logic 2003-09-01 3 3 REV:1.0 4 4 Compal Electronics, Inc. THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

Contextual Info: Technical S pecification PQ60010EGL25 48V in 1.0Vout 25Amp 2000Vdc Eighth-brick Input Output Current Isolation DC/DC Conver ter The PQ60010EGL25 PowerQor Giga eighth-brick converter is a next-generation, board-mountable, isolated, fixed switching frequency DC/DC converter that uses synchronous rectification to achieve extremely high conversion efficiency. The power dissipated by the converter is so low

Contextual Info: Technical S pecification PQ60010QPA60 48V in 1.0Vout 60Amp 2000Vdc Quar ter-brick Input Output Current Isolation DC/DC Conver ter The PQ60010QPA60 PowerQor Peta quarter-brick converter is a next-generation, board-mountable, isolated, fixed switching frequency DC/DC converter that uses synchronous rectification to achieve extremely high conversion efficiency. The

Contextual Info: Technical S pecification PQ60010EML15 48V in 1.0Vout 15Amp 2000Vdc Eighth-brick Input Output Current Isolation DC/DC Conver ter Th e PQ6 0010 EML 15 Po wer Qor Meg a e igh th- brick c on v er t er is a n ext -g e ner a ti on , b oa r d- mo un t ab l e, iso la t ed , fixed

ICS844S42I

Abstract: ICS844S
Contextual Info: Dual Output RF Frequency Synthesizer ICS844S42I DATA SHEET General Description Features The ICS844S42I is a 3.3V compatible, PLL based clock synthesizer targeted for clock generation in high-performance instrumentation, networking and computing applications. Using either the serial I2C

844s42

Abstract: C1089C oscillator 81MHz ICS844S42BKIL ICS844S42I ICS844S
Contextual Info: Dual Output RF Frequency Synthesizer ICS844S42I PRELIMINARY DATA SHEET General Description Features The ICS844S42I is a 3.3V compatible, PLL based clock synthesizer targeted for clock generation in HiPerClockS high-performance instrumentation, networking and

Contextual Info: AWC6312R HELP3 PCS CDMA 3.4V/28dBm Linear Power Amplifier Module TM Data Sheet - Rev 1.1 FEATURES • InGaP HBT Technology • High Efficiency: 40 % @ +28 dBm output 21 % @ +15 dBm output • Low Quiescent Current: 8 mA AW C 631 • Low Leakage Current in Shutdown Mode: <1 µA

ICS844S42BKIL

Abstract: ICS844S42I ICS844S ICS844S42BKI MO-220 844s42 844S42BKI
Contextual Info: Dual Output RF Frequency Synthesizer ICS844S42I DATA SHEET General Description Features The ICS844S42I is a 3.3V compatible, PLL based clock synthesizer targeted for clock generation in HiPerClockS high-performance instrumentation, networking and computing applications. Using either the serial I2C or

AWC6311R

Abstract: AWC6311RM9P9 AWC6311RM9Q7 dc m9 footprint
Contextual Info: HELP3 AWC6311R Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • High Efficiency: 39 % @ +28 dBm output 20 % @ +16 dBm output AW C • Low Quiescent Current: 8 mA 631 • Low Leakage Current in Shutdown Mode: <1 µA

max3219

Abstract: AWC6311RM9P9 AWC6311R
Contextual Info: HELP3 AWC6311R Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • High Efficiency: 39 % @ +28 dBm output 20 % @ +16 dBm output AW C • Low Quiescent Current: 8 mA 631 • Low Leakage Current in Shutdown Mode: <1 µA