DC 60 RF Search Results

circuit diagram voltage regulator 6 volt

Contextual Info: TPS54061-Q1 www.ti.com SLVSBM7 – MARCH 2013 Wide-Input, 60-V, 200-mA Synchronous Step-Down DC-DC Converter With Low IQ Check for Samples: TPS54061-Q1 FEATURES DESCRIPTION • • The TPS54061-Q1 device is a 60-V, 200-mA, synchronous step-down dc-dc converter with

Contextual Info: technolog es 60-1100 W DC-DDC Converter Mechanical Requirements 1301 Precision Drive • Plano, Texas 75074 U.S.A. ■ Tel: 972.423.8411 ■ Fax: 972.423.4550 ■ email: gci@gcint.com ■ website: www.gcint.com technolog es 60-1100 W DC-DDC Converter TRIPLE OUTPUT

VSON8 PACKAGE

Abstract: Programmable zener ic dac 0808 pin diagram tps54061 TPS54061DRBR TPS54061DRB
Contextual Info: TPS54061 www.ti.com SLVSBB7A – MAY 2012 – REVISED MAY 2012 Wide Input 60V, 200mA Synchronous Step-Down DC-DC Converter with Low IQ Check for Samples: TPS54061 FEATURES DESCRIPTION • • The TPS54061 device is a 60-V, 200-mA, synchronous step-down DC-DC converter with

UM501

Abstract: UM502 UM506 UM504 DATASHEET UM507 MA2000 UM514
Contextual Info: UM500 SERIES 10 to 12 Watt DC-DC Converters • ■ ■ ■ ■ High Performance. 60% Efficiency. Regulated Outputs. Pi Input Filter. Six-Sided Shield SPECIFICATIONS GENERAL SPECIFICATIONS All specifications are typical at nominal line, full load and 25°C unless otherwise noted.

PTB78520W

Abstract: PTH03050W TR-332 549kV
Contextual Info: PTB78520W 20-A, 18–60-V Input Auto-Track Compatible Isolated DC/DC Converter SLTS226A – JULY 2004 – REVISED OCTOBER 2005 Features • Wide-Input Voltage Range: 18 V to 60 V • 20 A Total Output Current • 90% Efficiency • Wide-Adjust Output Voltage:

Contextual Info: Coaxial Power Detector 50Ω, - 60dBm to +5dBm, ZX47-60+ 10 - 8000 MHz Features Maximum Ratings Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power • High Dynamic Range • Wide Bandwidth • Single Supply Voltage: +5V

Contextual Info: RF PhotoMOS AQY221❍2V Ultra minimum package size, SSOP (1 Form A) 4-pin type. Lower output capacitance (C type) and on resistance (R type). (C✕R10) RF PhotoMOS (AQY221❍2V) FEATURES 4.45 .175 1.80 .071 2.65 .104 1. Reduced package size Lower surface has been reduced 60%

Contextual Info: RF 2 Form A Low on-resistance AQW22PN DIP8-pin type featuring low on-resistance with 200V/400V load voltage RF 2 Form A Low on-resistance (AQW22PN) AQW22PN 6.4 .252 9.78 .385 3.9±0.2 .154±.008 9.78 .385 Height includes standoff 6.4 .252 3.6±0.2 .142±.008

AQY221R4V

Abstract: aqy221r2v AQY221PPV aqy221n2
Contextual Info: RF SSOP 1 Form A CxR10 AQY221PPV Micro-miniature SSOP Lower output capacitance and on resistance (CR10) 40 V load voltage AQY221PPV RF SSOP 1 Form A CxR10 (AQY221PPV) FEATURES 2.65 .104 1. Micro-miniature package (SSOP) using a new flat lead terminal shape

Contextual Info: RF SSOP 1 Form A CR10/CR5 AQY221❍❍V Miniature SSOP C✕R10: 30 V and 40 V load voltage C✕R5: 25 V load voltage 2.65 .104 4.45 .175 1.80 .071 mm inch CAD Data CAD Data 1 4 2 3 RF SSOP 1 Form A CR10/CR5 (AQY221❍❍V) FEATURES TYPICAL APPLICATIONS

1812C105KAT2A

Abstract: C1206C104KRAC7800 600L270 7737 transistor CAPACITOR SPRAGUE 0149 Transistor s-parameter 600L270JT200 RO3210 RF Transistor s-parameter at 4GHz J1101
Contextual Info: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers

Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

NCB1206B102TR030F

Abstract: NCB1206B121TR090F 0201 land pattern NCB1206B601TR040F NCB0603R600TR NCB0402P600TR030F NCB0805A152TR
Contextual Info: Ferrite Chip Beads NCB Series FEATURES • RUGGED CONSTRUCTION IN STANDARD EIA SIZES • EFFECTIVE EM/RFI SUPPRESSION UP TO 1 Ghz • CURRENT RATINGS UP TO 5 AMPS STYLE 2 • 100% CLOSED MAGNETIC CIRCUIT, AVOIDS CROSSTALK • BOTH FLOW AND REFLOW SOLDERING APPLICABLE

NONLINEAR MODEL LDMOS

Contextual Info: RFSA2013 RFSA2013 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR MODE VDD VC GND Package Style: QFN, 16-Pin, 0.9mm x 3mm x 3mm 16 15 14 13 Features Broadband 50MHz to 4000MHz Frequency Range  30dB Attenuation Range  +50dBm IIP3 Typical 

B82145A1225J000

Contextual Info: Chokes and inductors For high frequency and EMC RF chokes, HLBC series Ordering code: Date: B82145 August 2005 EPCOS AG 2005. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

103p capacitor

Abstract: KA9259D Laser Diode 808 2 pin 1000 mw RF74 S1L9223B01 S1L9223B01-Q0R0 S5L9284D S5L9286F01 SG32 SG42
Contextual Info: RF AMP & SERVO SIGNAL PROCESSOR S1L9223B01 INTORDUCTION 80−QFP−1420C The S1L9223B01 is a 1-chip BICMOS integrated circuit to perform the function of RF amp and servo signal processor for compact disc player applications. It consist of blocks for RF signal processing, focus, tracking,

Chokes color coding

Abstract: 8S1272K000 B7818S1105J000
Contextual Info: Chokes and inductors For high frequency and EMC RF chokes, BC series Ordering code: Date: B78108S / B78148S August 2005 EPCOS AG 2005. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

CDBA340-G

Abstract: CDBA3100-G CDBA320-G CDBA360-G CDBA380-G NU DO-214AC
Contextual Info: COMCHIP SMD Schottky Barrier Rectifiers S M D D IO D E S P E C IA L IS T CDBA320-G Thru CDBA3100-G Reverse Voltage: 20 -1 0 0 Volts Forward Current: 3.0 Amp RoHS Device Features D O -2 14 A C SM A Id eal fo r s u rfa c e m ount ap p lic a tio n s A. E a s y pick and p lace

MQE 550-902

Abstract: MQE MURATA mqe550 RF133 quadrature mixer Murata MQE 550-902 550-902 MURATA MQE murata intermediate frequency filter for GSM900 AV RF modulator
Contextual Info: RF133 RF/IF Transceiver For GSM Applications The RF133 RF/IF Transceiver is a highly integrated, monolithic device optimized for use in GSM and other TDMA single-band or multi-band applications. The receive path of the device consists of three Intermediate Frequency IF

MA2S077

Contextual Info: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.8 ± 0.1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and

MHW916

Abstract: 301ab DO 925 pl
Contextual Info: MOTOROLA Order this document by MHW916/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifier MHW916 Designed specifically for the European Digital Extended Group Special Mobile GSM Base Station applications in the 925–960 MHz frequency range.

Contextual Info: Ceramic LFCN-1000+ LFCN-1000 Low Pass Filter 50Ω DC to 1000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input 10W* max. at 25°C DC Current Input to Output 0.5A max. at 25°C * Derate linearly to 3.5W at 100°C ambient.

M10060

Contextual Info: Ceramic LFCN-6700+ LFCN-6700 Low Pass Filter DC to 6700 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* • • • • • 9W max. at 25°C DC Current Input to Output 0.5A max. at 25°C