DBLL Search Results

IS62WV6416DBLL-45TLI

Abstract: IS62WV6416DALL-55BLI IS62WV6416DBLL-45BLI 45TLA
Contextual Info: IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 15 mW typical operating 1.5 µW (typical) CMOS standby • TTL compatible interface levels

Contextual Info: IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES •฀ High-speed฀access฀time:฀35ns,฀45ns,฀55ns •฀ CMOS฀low฀power฀operation: ฀ 15฀mW฀ typical ฀operating ฀ 1.5฀µW฀(typical)฀CMOS฀standby

Contextual Info: IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns DECEMBER 2010 DESCRIPTION The ISSI IS62/65WV1288DALL and IS62/DBLL are high-speed, 1M bit static RAMs organized as

Contextual Info: IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBRUARY 2012 DESCRIPTION The ISSI IS62WV5128DALL / DBLL are FEATURES • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words

Contextual Info: IS61WV6416DALL/DALS DBLL/DBLS DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64WV6416DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)

IS62WV25616DBLL-45BLI

Contextual Info: IS62WV25616DALL/DBLL, IS65WV25616DALL/DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM SEPTEMBER 2010 FEATURES DESCRIPTION The ISSI IS62WV25616DALL/DBLL are • High-speed access time: 35, 45, 55 ns high-speed, low power, 4M bit SRAMs organized as

Contextual Info: IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 12 mW typical operating 4 µW (typical) CMOS standby • TTL compatible interface levels

IS62WV12816DALL-70BLI

Contextual Info: IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL PRELIMINARY INFORMATION 128K x 16 LOW VOLTAGE, MAY 2011 ULTRA LOW POWER CMOS STATIC RAM FEATURES • • • • • • • • • • High-speed access time: 45ns, 55ns, 70ns CMOS low power operation – 36 mW typical operating

Contextual Info: IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL SEPTEMBER 2011 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • • • • • • • • • • High-speed access time: 35ns, 45ns, 55ns CMOS low power operation – 36 mW typical operating

DBLL

Contextual Info: IS66WV1M16DALL DBLL PRELIMINARY INFORMATION MARCH 2011 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM FEATURES DESCRIPTION The ISSI IS66WV1M16DALL/DBLL is a high-speed, 16M bit static RAMs organized as 1Mb words by 16 bits. It is fabricated using ISSI's high-performance

Contextual Info: IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 12 mW typical operating 4 µW (typical) CMOS standby • TTL compatible interface levels

Contextual Info: IS63WV1288DALL/DALS DBLL/DBLS DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)

Contextual Info: IS62WV25616DALL/DBLL, DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MARCH 2013 DESCRIPTION The ISSI IS62WV25616DALL and IS62/DBLL FEATURES • High-speed access time: 35, 45, 55 ns are high-speed, low power, 4M bit SRAMs organized as

DBLL

Abstract: IS63WV1288DBLL
Contextual Info: IS63WV1288DALL/DALS DBLL/DBLS DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)

IS62WV1288DBLL-45HLI

Abstract: IS62WV1288DBLL-45TLI IS62WV1288DBLL-45BLI IS62WV1288DBLL 62WV1288DALL
Contextual Info: IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 12 mW typical operating 4 µW (typical) CMOS standby • TTL compatible interface levels

PACKAGE12

Contextual Info: IS61WV12816DALL/DALS DBLL/DBLS DBLL/DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64WV12816DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 100 mW (typical) • Low Standby Power: 0.3 mW (typical)

IS61WV12816DBLL

Abstract: IS61WV12816DBLL 10BLI 10Tl
Contextual Info: IS61WV12816DALL/DALS DBLL/DBLS DBLL/DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64WV12816DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 W (typical)

DBLL

Abstract: IS64WV12816DBLL
Contextual Info: IS61WV12816DALL/DALS DBLL/DBLS DBLL/DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64WV12816DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)

DBLL

Abstract: IS62WV1288DBLL-45TLI
Contextual Info: IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 12 mW typical operating 4 µW (typical) CMOS standby • TTL compatible interface levels

Contextual Info: IS62WV25616DALL/DBLL, DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM JUNE 2013 FEATURES DESCRIPTION The ISSI IS62WV25616DALL and IS62/DBLL • High-speed access time: 35, 45, 55 ns are high-speed, low power, 4M bit SRAMs organized as

DBLL

Contextual Info: IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL JUNE 2013 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • • • • • • • • • • High-speed access time: 35ns, 45ns, 55ns CMOS low power operation – 36 mW typical operating – 9 µW (typical) CMOS standby

IS65WV25616DBLL-45CTLA1

Contextual Info: IS62WV25616DALL/DBLL, DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEBRUARY 2012 FEATURES DESCRIPTION The ISSI IS62WV25616DALL and IS62/DBLL • High-speed access time: 35, 45, 55 ns are high-speed, low power, 4M bit SRAMs organized as

DBLL

Contextual Info: IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 15 mW typical operating 1.5 µW (typical) CMOS standby • TTL compatible interface levels

IS63WV1288DALL

Contextual Info: IS63WV1288DALL/DALS DBLL/DBLS DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION FEBRUARY 2010 FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical)