DATE SHEET FOR 8A 2011 Search Results

Contextual Info: For Reference Date of Issue: March 17, 2011 OMRON Corporation OMRON RELAY&DEVICES Corporation SPECIFICATIONS This specification sheet is for reference only, Please request it again if a specification for receipt is necessary. Handled by Distribution Customer

Contextual Info: For Reference Date of Issue: March 17, 2011 OMRON Corporation OMRON RELAY&DEVICES Corporation SPECIFICATIONS This specification sheet is for reference only, Please request it again if a specification for receipt is necessary. Handled by Distribution Customer

Contextual Info: RHRP860_F085 September 2011 Data Sheet 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

TA49059

Abstract: rhrp TA4905
Contextual Info: RHRP860_F085 Data Sheet September 2011 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

8 pins 4 mosfet

Abstract: SLUP100
Contextual Info: CSD87331Q3D SLPS283 – SEPTEMBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

Contextual Info: OLED SPECIFICATION Model No: EA W20016-XALG MODLE NO︓EA W20016-XALG RECORDS OF REVISION VERSION DATE 2011.11.18 DOC. FIRST ISSUE REVISED SUMMARY PAGE NO. First issue 2. General Specification Item Number of Characters Module dimension View area Active area

Contextual Info: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

MAX14980

Abstract: 63TC
Contextual Info: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

Contextual Info: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

Contextual Info: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

CSD87331Q3D

Contextual Info: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPW60R230P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6 1Description TO-247

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R230P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6,IPP60R230P6,IPA60R230P6 1Description

5V 5A voltage regulator

Contextual Info: 19-6009; Rev 0; 8/11 MAX15108 Evaluation Kit Evaluates: MAX15108 General Description The MAX15108 evaluation kit EV kit provides a proven design to evaluate the MAX15108 high-efficiency, 8A, step-down regulator with integrated switches in a 20-bump wafer-level package (WLP). The EV kit is preset for 1.5V

Contextual Info: ÏB H S - 5 4 C 1 3 8 R H Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer Septem ber 1995 Features Pinouts • Radiation Hardened EPI-CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW - Total Dose 1 x 10s RAD(Si)

2100a epoxy

Abstract: RF1601T2D RF1601
Contextual Info: RF1601T2D Data Sheet Fast recovery diodes RF1601T2D Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F

Contextual Info: Data Sheet Fast recovery diodes RF1601T2D Applications General rectification Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss (1) (2) (3) Construction Silicon epitaxial planar

Contextual Info: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout

Contextual Info: DEMO MANUAL DC1743A LTM4613 8A, High Voltage Power µModule Regulator Description Demonstration circuit DC1743A features the LTM 4613EV, an EN55022 class B certified, high input and output voltage, high efficiency, switch mode step-down power µModule® regulator. The input voltage range is from 5V to 36V. The

Contextual Info: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout

SNVA425

Contextual Info: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout

Contextual Info: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules

Contextual Info: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA0014U10000000 Version