DATE SHEET 5TH CLASS 2012 Search Results

Contextual Info: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

Contextual Info: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

Contextual Info: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

DETUNING REACTOR

Contextual Info: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M400 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

D260-4118-0000

Abstract: 0119A 0190A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: User's Guide SLAU432 – February 2012 DAC348x EVM 1 2 3 4 5 Contents Introduction . 2 1.1 Overview . 2

M27500-16RC1509

Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

G2225X7R225KT3AB

Abstract: m27500 transfer impedance
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

ATC600 capacitor

Abstract: MRF7S21170HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

0119A

Abstract: IC/0119A IC/IC/0119A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

Contextual Info: 10 No. OF CCTS. 2 2 , 15 6 ± -o TYP„ NON-ACCUM Ie NOTE 6 BOARD LOCKING RAMP OPTIONAL x2 ( 2 .5 ) DIRECTION OF TERMINAL INSERTION. NOTES: 1. M ATERIAL: UL9AV-2 NYLON, IEC 60335-1 5TH EDITION GLOW WIRE CAPABLE, COLOR: BLACK FINISH: N/A ) +O.I3 .312 (11.79

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T1800N Key Parameters VDRM / VRRM 4200V ITAVM 1795A TC=85°C ITSM vT0 41000A 3570A (TC=55°C) 0,85V rT 0,4mΩ RthJC 7,8K/kW Clamping Force 40…65kN Max. Diameter 111mm

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T600N target data Key Parameters enndaten VDRM / VRRM 9500V ITAVM 590A TC=85°C ITSM vT0 12800A 3570A (TC=55°C) 1,254V rT 1,414mΩ RthJC 19,0K/kW Clamping Force 15…24kN

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

MSA103

Abstract: BP317 PTB23003X DSA005130 SOT440A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X FEATURES

BP317

Abstract: LXE18300X SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE18300X NPN microwave power transistor Product specification Supersedes data of January 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

Contextual Info: Durakool Mercury Displacement Relays & Contactors, Mercury Tilt Switches, and Mercury Floats Safety Data Sheet according to the federal final rule of hazard communication revised on 2012 HazCom 2012 Date of issue: 03/11/2015 Version: 1.0 SECTION 1: Identification of the substance/mixture and of the company/undertaking

Contextual Info: REV - DESCRIPTION NIR-52400 Preliminary Release DATE 2/6/2014 PREP APPD VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Oscillator Specification, Hybrid Clock QUALITY Hi-Rel Standard, High Frequency CMOS ENGINEERING CODE IDENT NO SIZE

OM5608

Abstract: 1236 tuner PCF8574A EN50082-1
Contextual Info: INTEGRATED CIRCUITS DATA SHEET OM5608 Multimedia radio tuner Preliminary specification File under Integrated Circuits, IC01 1995 Oct 17 Philips Semiconductors Preliminary specification Multimedia radio tuner OM5608 FEATURES • Local/DX switching to improve large signal handling on

mga028

Abstract: 339 marking code transistor MGA02 BP317 PTC4001T SC15 SOT440A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTC4001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor