DATE CODE MARKING STMICROELECTRONICS D PAK Search Results

STMicroelectronics DPAK Marking CODE

Abstract: STMicroelectronics Date Code DPAK Date Code Marking STMicroelectronics PACKAGE DPAK INFINEON PART MARKING DPAK STMicroelectronics DPAK marking code date how to identify dpak ecopack outgoing qc ST Microelectronics KF33BDT-TR LD1117DT
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG-COM/03/391 Products in DPAK, PPAK, D2PAK, P2PAK packages:Lead free component connections 2003/12/11 PCN DSG-COM/03/391 Product Family /Commercial Product DPAK,PPAK,P2PAK,D2PAK for V.R. devices Type Of Change Package assembly process change

STTH5R06B

Abstract: STTH5R06GY 17655
Contextual Info: STTH5R06-Y Automotive Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse recovery current ■ Reduces switching losses ■ Low thermal resistance ■ AEC-Q101 qualified K K A A NC NC 2 D PAK STTH5R06G-Y DPAK STTH5R06B-Y

Contextual Info: 2STBN15D100 Low voltage NPN power Darlington transistor Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application ■ 3 1 Linear and switching industrial equipment

st marking code

Contextual Info: 2STBN15D100 Low voltage NPN power Darlington transistor Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application ■ 3 1 Linear and switching industrial equipment

Contextual Info: STH360N4F6-2 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − preliminary data Features Order code VDSS RDS on max ID STH360N4F6-2 40 V < 1.25 mΩ 180 A(1) TAB 1. Current limited by package • 2 Low gate charge

ISD25

Abstract: STB18NF30
Contextual Info: STB18NF30 N-channel 330 V, 18 A STripFET II Power MOSFET in D²PAK package Preliminary data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A TAB • 100% avalanche tested ■ 175 °C junction temperature 3 1 Applications ■ D²PAK

STI300N4F6

Contextual Info: STI300N4F6 N-channel 40 V, 1.4 mΩ, 160 A, I²PAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max. ID STI300N4F6 40 V 2.0 mΩ 160 A(1) 1. Limited by wire bonding • Standard level VGS(th) ■ 175 °C junction temperature

Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness TAB 2 3

w25nm60n

Abstract: f25nm60n P25NM60N P25NM60 STF25NM60N STB25NM60N-1 STB25NM60NT4 STP25NM60N STW25NM60N B25NM60N
Contextual Info: STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60N N-CHANNEL 650 @Tjmax-0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @Tjmax RDS(on) ID STB25NM60N-1 STF25NM60N

P25NM60N

Abstract: w25nm60n f25nm60n F25NM60 P25NM60 W25NM ef 933 STB25NM60N STB25NM60N-1 STF25NM60N
Contextual Info: STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60N N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @Tjmax RDS(on) ID STB25NM60N-1 STF25NM60N

300NH02L

Contextual Info: STH300NH02L-6 N-channel 24 V, 0.95 mΩ, 180 A, H²PAK-6 STripFET Power MOSFET Features Order code VDSS RDS on max. ID (1) STH300NH02L-6 24 V < 1.2 mΩ 180 A TAB 1. Current limited by package 6 • Conduction losses reduced ■ Low profile, very low parasitic inductance, high

STH240N75F3-6

Contextual Info: STH240N75F3-6 N-channel 75 V, 2.6 mΩ, 180 A, H²PAK STripFET III Power MOSFET Features Order code VDSS RDS on max. ID STH240N75F3-6 75 V < 3.0 mΩ 180 A • Conduction losses reduced ■ Low profile, very low parasitic inductance 7 1 Applications ■

STPS40120CR

Abstract: JESD97 STPS40120C STPS40120CT
Contextual Info: STPS40120C Power Schottky rectifier Main product characteristics IF AV A1 2 x 20 A VRRM 120 V Tj(max) 175° C VF(typ) 0.57 V K A2 K K Feature and benefits • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and

w25nm60n

Abstract: P25NM60N f25nm60n B25NM60N w25nm60 ST T4 0560 Marking STMicroelectronics to220
Contextual Info: STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60N N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @Tjmax RDS(on) ID STB25NM60N-1 STF25NM60N

B80NF55-06

Contextual Info: STB80NF55-06T N-channel 55 V, 5 mΩ, 80 A STripFET II Power MOSFET in a D²PAK package Features Order code VDSS RDS on max. ID STB80NF55-06T 55 V < 6.5 mΩ 80A TAB • Exceptional dv/dt capability Applications ■ Switching application ■ Automotive 3

10428

Abstract: STB45NF06 mosfet DPAK
Contextual Info: STB45NF06 N-channel 60 V, 0.22 Ω typ., 38 A STripFET II Power MOSFET in a D2PAK package Datasheet — production data Features Order code STB45NF06T4 • VDS RDS on max ID 60 V 0.028 Ω 38 A TAB Typical RDS(on) = 0.022 Ω ■ Exceptional dv/dt capability

AM-145

Abstract: STH400N4F6-2 STH400
Contextual Info: STH400N4F6-2, STH400N4F6-6 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet − preliminary data Features Order code STH400N4F6-2 STH400N4F6-6 VDSS RDS on max ID 40 V < 1.15 mΩ 180 A(1) TAB TAB 2

B170NF04

Abstract: STB170NF04
Contextual Info: STB170NF04 N-channel 40 V, 4.4 mΩ typ., 80 A STripFET II Power MOSFET in a D2PAK package Datasheet — production data Features Order code VDSS @TJ max. RDS on max. ID PTOT STB170NF04 40 V < 5 mΩ 80 A 300 W • TAB Standard threshold drive 3 Applications

13NK60Z

Abstract: 13nk60 STFI13NK60Z
Contextual Info: STFI13NK60Z N-channel 600 V, 0.48 Ω, 13 A, I2PakFP Zener-protected SuperMESH Power MOSFET Preliminary data Features Order code STFI13NK60Z VDSS RDS on max 600 V <0.55 Ω ID PTOT 13 A TBD • Fully insulated and low profile package with increased creepage path from pin to heatsink

Gf7NC60HD

Abstract: STMicroelectronics date marking on D 2pak STGF7NC60HD
Contextual Info: STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V < 2.5 V < 2.5 V

210N75F6

Contextual Info: STH210N75F6-2 N-channel 75 V, 0.0022 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH210N75F6-2 75 V < 0.0028 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

B230NH03L

Abstract: 3M Philippines
Contextual Info: STB230NH03L N-channel 30 V, 2.3 mΩ, 80 A D²PAK STripFET Power MOSFET Features Order code VDSS RDS on ID STB230NH03L 30V < 3mΩ 80A(1) TAB 1. This value is limited by package • RDS(on) Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced

Contextual Info: STH245N75F3-6 Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A STripFET III Power MOSFET in a H²PAK-6 package Datasheet - production data Features Order code VDS RDS on max. ID STH245N75F3-6 75 V 3.0 Ω 180 A TAB • Designed for automotive applications and