DATE CODE, RENESAS MOS FET Search Results

R2J20701NP

Contextual Info: R2J20701NP Peak Current Mode Synchronous Buck Controller with Power MOS FETs REJ03G1459-0300 Rev.3.00 Jun 20, 2007 Description This all-in-one SiP for POL point-of-load applications is a multi-chip module incorporating a high-side MOS FET, low-side MOS FET, and PWM controller in a single QFN package. The on and off timing of the power MOS FET is

RJK6013DPE

Abstract: RJK6013DPE-00-J3
Contextual Info: RJK6013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1535-0100 Rev.1.00 Apr 04, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D

PRSS0004ZE-A

Abstract: RJK4014DPK RJK4014DPK-00-T0 SC-65
Contextual Info: RJK4014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1576-0100 Rev.1.00 Aug 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate

PRSS0004ZE-A

Abstract: RJK6018DPK RJK6018DPK-00 SC-65
Contextual Info: RJK6018DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1537-0100 Rev.1.00 Apr 04, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate

RJK4012DPE

Abstract: RJK4012DPE-00-J3
Contextual Info: RJK4012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1575-0100 Rev.1.00 Aug 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D

RJK4518DPK

Abstract: PRSS0004ZE-A RJK4518DPK-00-T0 SC-65 REJ03G1529-0100
Contextual Info: RJK4518DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1529-0100 Rev.1.00 Mar 20, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate

RJK5014DPP

Abstract: RJK5014DPP-00-T2
Contextual Info: RJK5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1530-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

HAT2179R

Abstract: HAT2179R-EL-E
Contextual Info: HAT2179R Silicon N Channel MOS FET High Speed Power Switching REJ03G1570-0100 Rev.1.00 Jul 06, 2007 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D Package name: SOP-8<FP-8DAV> 8 5 6 7 8

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2373ZE

Contextual Info: 2SK2373 Silicon N Channel MOS FET REJ03G1009-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch

Contextual Info: Preliminary Datasheet RJK6034DPD-E0 600 V - 1 A - MOS FET High Speed Power Switching R07DS0553EJ0100 Rev.1.00 Oct 13, 2011 Features • Low on-resistance RDS on = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

RJK6015DPK

Abstract: PRSS0004ZE-A RJK6015DPK-00-T0 SC-65
Contextual Info: RJK6015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate

H5N2522FN

Abstract: H5N2522FN-E-T2
Contextual Info: H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

RJK2009DPM

Contextual Info: Preliminary Datasheet RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0300 Rev.3.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM

RJK0393DPA

Contextual Info: Preliminary Datasheet RJK0393DPA Silicon N Channel Power MOS FET Power Switching REJ03G1784-0220 Rev.2.20 May 21, 2010 Features •     High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.3 m typ. (at VGS = 10 V)

PRSS0003AE-A

Abstract: RJK1525DPS RJK1525DPS-00-T2
Contextual Info: RJK1525DPS Silicon N Channel MOS FET High Speed Power Switching REJ03G1314-0200 Rev.2.00 Feb 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AE-A Package name: TO-220CFM D 1. Gate

Contextual Info: Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300 Previous: REJ03G1521-0200 Rev.3.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current

RQK0604IGDQATL-E

Abstract: RQK0604IGDQA SC-59A
Contextual Info: RQK0604IGDQA Silicon N Channel MOS FET Power Switching REJ03G1496-0100 Rev.1.00 Jan 15, 2007 Features • Low on-resistance RDS on = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.5 V gate drive

RJK0305DPB-00-J0

Abstract: RJK0305DPB
Contextual Info: RJK0305DPB Silicon N Channel Power MOS FET Power Switching REJ03G1353-0900 Rev.9.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.7 mΩ typ. (at VGS = 10 V)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Preliminary Datasheet RJE0607JSP R07DS0123EJ0200 Previous: REJ03G1876-0100 Rev.2.00 Sep 01, 2010 Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

2SK2225-E

Contextual Info: 2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 Previous: ADE-208-140 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown

Contextual Info: 2SK1317 Silicon N Channel MOS FET REJ03G0929-0200 Previous: ADE-208-1268 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown