DATASHEET TRANSISTOR REPLACEMENT Search Results

IRG4PC40S

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1465 IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

IRG4BC40S

Abstract: TO-220AB IRG4BC40S
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1455 IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

IGBT IRG4PC50UD

Abstract: IRG4PC50UD
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1471 IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRG4PC30UD

Abstract: 6000uf igbt 600V
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1462 IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRG4PC50FD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20

IRG4BC30FD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1451 IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20

IRG4PC40UD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1467C IRG4PC40UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRG4PC40FD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1464 IRG4PC40FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20

IRG4BC30UD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRG4PC30FD

Abstract: 5C100A
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1460 IRG4PC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20

IRG4PC50F

Abstract: 80UF
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1468A IRG4PC50F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4BC30U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

1461C

Abstract: IRG4PC30U
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC50U

Abstract: irg4pc50u equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1470D IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4BC40F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1454 IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4BC20U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC40F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1463 IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC30F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1459 IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4BC30F

Abstract: 555 triangular wave
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1450 IRG4BC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: Datasheet PD44164184B 18M-BIT DDR II SRAM 4-WORD BURST OPERATION R10DS0015EJ0200 Rev.2.00 October 6, 2011 Description The μPD44164184B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: Datasheet PD46184184B 18M-BIT DDR II SRAM 4-WORD BURST OPERATION R10DS0120EJ0200 Rev.2.00 Nov 09, 2012 Description The μPD46184184B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

IRG4PC40U

Abstract: S3000
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1466C IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

TRANSISTOR SMD 9bb

Abstract: smd transistor 2f smd transistor 9BB smd transistor 2f x mosfet 4,5a 023 12v TRANSISTOR SMD 2F 2f smd transistor IRFN3710 smd transistor AR smd diode 2F
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1417 IRFN3710 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Product Summary Ω , HEXFET 100 Volt, 0.028Ω Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve

Contextual Info: Datasheet PD44164184B-A 18M-BIT DDR II SRAM 4-WORD BURST OPERATION R10DS0015EJ0100 Rev.1.00 Jan 5, 2011 Description The μPD44164184B-A is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.