DATASHEET TIP 1050 Search Results
DATASHEET TIP 1050 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 105015356802A |
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USB 2.0, Type A, Receptacle, Right Angle Sink, 3.8mm Height, 4 Pins, Shell Nickel Plating, 30u\\ Gold, Dip 2.7mm, Shell Dip, Black Temperature Housing, Tape and Reel Packaging | |||
| 105012306400A |
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USB 2.0, Type A, Receptacle, Right Angle Stacked, 8 Pins, Front Spring, Shell with Nickel Plating, Gold Flash, Dip 2.8mm, Black Housing, Tray Packaging | |||
| 54242-105080950LF |
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BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 8 Positions, 2.54mm (0.100in) Pitch. | |||
| 54112-107341050LF |
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BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 34 Positions, 2.54mm (0.100in) Pitch. | |||
| 51746-10505200A0LF |
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PwrBlade®, Power Supply Connectors, 5P 52S Vertical Receptacle. |
DATASHEET TIP 1050 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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N681622
Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
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N681386/87 N681386/87, 16-bit N681622 W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg | |
LT3503Contextual Info: DEMO CIRCUIT 1050 LT3503 QUICK START GUIDE LT3503 1.2A, 2.2MHz Step-Down Switching Regulator in 2mmx3mm DFN DESCRIPTION Demonstration circuit 1050 is a monolithic step-dow n DC/DC sw itching regulator featuring LT3503. The demo board is designed for 3.3V output from a 4.5V to 20V |
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LT3503 LT3503. LT3503 | |
RJ11 splitter
Abstract: RJ61 splitter CT812 RJ-61 RJ11 JACK MODULE 4 PIN DI0408LSAR2 E96804 ICES-003 Intel Dialogic PLAY STATION 3 POWER SUPPLY
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DI0408LSAR2 DI0408LSAR2 DI0408LSAR2; DI0408LSAR2EU RJ11 splitter RJ61 splitter CT812 RJ-61 RJ11 JACK MODULE 4 PIN E96804 ICES-003 Intel Dialogic PLAY STATION 3 POWER SUPPLY | |
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Contextual Info: Le7944 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant-current feed ■ On-chip Thermal Management TMG feature ■ Current gain = 200 ■ Two-wire impedance set by single external impedance ■ Programmable loop-detect threshold |
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Le7944 | |
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Contextual Info: Le7944 Subscriber Line Interface Circuit • Programmable constant-current feed ■ On-chip Thermal Management TMG feature ■ Current gain = 200 ■ Two-wire impedance set by single external impedance ■ Low standby power ■ Ground-key detector ■ –19 V to –56.5 V battery operation |
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Le7944 | |
68pin SCSI connector
Abstract: RJ11 patch panel CBLTAC0X32 RJ21X EBZUSA-43111-CE-T fsk arm dtmf CT812 DISI32R2 Intel Dialogic 8 pin mini-din audio diagram
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DISI16R2, DISI24R2, DISI32R2 DISI32R2 68pin SCSI connector RJ11 patch panel CBLTAC0X32 RJ21X EBZUSA-43111-CE-T fsk arm dtmf CT812 Intel Dialogic 8 pin mini-din audio diagram | |
tip 1050
Abstract: transistor tip 1050 DA79 LT 735
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Am7944 tip 1050 transistor tip 1050 DA79 LT 735 | |
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Contextual Info: iC-OG preliminary 8-BIT DIFFERENTIAL SCANNING OPTO ENCODER Rev D1, Page 1/10 FEATURES APPLICATIONS ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability ♦ Short track spacing of 600 µm ♦ Elimination of dark currents through differential scanning |
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38-pin oQFN38-7x5 oQFN38-7x5-xR 20-pin D-55294 | |
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Contextual Info: 400mW /1060nm Single Mode Pump Laser Features • • • • 400mW Kink Free 1060 wavelength Internal cooler and thermistor PM Fiber Applications • Ordering Information Fiber Lasers Part number Description EM250 1060nm SM Pump General Description The EM250 single mode, cooled 1060 nm pump laser delivers up to 400mW of fiber-coupled power. The module is packaged |
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400mW /1060nm EM250 1060nm | |
P219XContextual Info: 420mW Single Mode Pump Laser Features • • • Qualified according to Telcordia GR-468-CORE Optional Bragg grating Internal cooler and thermistor Applications • • • • Telecom CATV Defense Life Science General Description The EM4 P219 line of single mode, cooled 980 nm pump lasers deliver up to 420mW of fiber-coupled power. The modules are |
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420mW GR-468-CORE p219-xxx P219X | |
bragg
Abstract: Grating P162-350-YYYZ P162 F4223
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350mW GR-468-CORE bragg Grating P162-350-YYYZ P162 F4223 | |
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Contextual Info: 350mW Single Mode Pump Laser Features • • • Qualified according to Telcordia GR-468-CORE Optional Bragg grating Internal cooler and thermistor Applications • • • • Telecom CATV Defense Life Science General Description The EM4 P162 line of single mode, cooled 980 nm pump lasers deliver up to 350mW of fiber-coupled power. The modules are |
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350mW GR-468-CORE p162-xxx | |
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Contextual Info: 5mm Infrared LED,T-1 3/4 IR383 Features ․High reliability ․High radiant intensity ․Peak wavelength λp=940nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free ․This product itself will remain within RoHS compliant version. Description ․EVERLIGHT’s Infrared Emitting Diode IR383 is a |
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IR383 940nm IR383) DIR-0000988 | |
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Contextual Info: 5mm Infrared LED,T-1 3/4 IR333/H0 Features ․High reliability ․High radiant intensity ․Peak wavelength λp=940nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free ․This product itself will remain within RoHS compliant version. Description ․EVERLIGHT’s Infrared Emitting Diode IR333/H0 is a |
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IR333/H0 940nm IR333/H0) DIR-0000122 | |
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Contextual Info: 600mW Single Mode Pump Laser Features • • • Qualified according to Telcordia GR-468-CORE Optional Bragg grating Internal cooler and thermistor Applications • • • • Telecom CATV Defense Life Science General Description The EM4 P161 line of single mode, cooled 980 nm pump lasers deliver up to 600mW of fiber-coupled power. The modules are |
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600mW GR-468-CORE p161-xxx | |
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Contextual Info: 350mW Single Mode Pump Laser Features • • • Qualified according to Telcordia GR-468-CORE Optional Bragg grating Internal cooler and thermistor Applications • • • • Telecom CATV Defense Life Science General Description The EM4 P162 line of single mode, cooled 980 nm pump lasers deliver up to 350mW of fiber-coupled power. The modules are |
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350mW GR-468-CORE p162-xxx | |
p162x
Abstract: Grating GR-468-CORE P162-XXX-YYYZ 980 nm laser diode
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600mW GR-468-CORE thermoe040 p161-xxx p162x Grating P162-XXX-YYYZ 980 nm laser diode | |
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Contextual Info: 5mm Infrared LED IR7393C Features ․High reliability ․High radiant intensity ․Peak wavelength λp=940nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free ․This product itself will remain within RoHS compliant version. Description ․EVERLIGHT’s Infrared Emitting Diode IR7393C is a |
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IR7393C 940nm IR7393C) DIR-0000936 | |
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Contextual Info: 5mm Infrared LED ,T-1 3/4 SIR333-A Features ․High reliability ․High radiant intensity ․Peak wavelength λp=875nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free Description ․EVERLIGHT’s Infrared Emitting Diode SIR333-A is a high intensity diode , molded in a blue transparent plastic package. |
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SIR333-A 875nm SIR333-A) DIR-0000952 | |
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Contextual Info: 5mm Infrared LED,T-1 3/4 HIR333C/H0 Features ․High reliability ․High radiant intensity ․Peak wavelength λp=850nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free ․This product itself will remain within RoHS compliant version. Description ․EVERLIGHT’s Infrared Emitting Diode HIR333C/H0 is a |
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HIR333C/H0 850nm HIR333C/H0) DIR-0000944 | |
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Contextual Info: 5mm Infrared LED,T-1 3/4 HIR333/H0 Features ․High reliability ․High radiant intensity ․Peak wavelength λp=850nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free ․This product itself will remain within RoHS compliant version. Description ․EVERLIGHT’s Infrared Emitting Diode HIR333/H0 is a |
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HIR333/H0 850nm HIR333/H0) DIR-0000948 | |
TB-94Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm |
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TB9414VA 2002/95/EC 2002/96/EC TB9414VA 11-Mar-11 TB-94 | |
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Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm |
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TB9414VA 2002/95/EC 2002/96/EC TB9414VA 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm |
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TB9414VA 2002/95/EC 2002/96/EC TB9414VA 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |