DATASHEET OF IC 7400 Search Results

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone

DIM1600FSS17-A000

Contextual Info: DIM1600FSS17-A000 Single Switch IGBT Module DS5833-1.0 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23957)

ge traction motor

Abstract: DIM600XSM45-F000
Contextual Info: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability • High isolation module

DIM1600FSM17-A000

Abstract: DS5455-2
Contextual Info: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2001, version DS5455-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.0 March 2002

12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Contextual Info: Datasheet – BLADE IN81 Indice Semiconductor Pty Ltd Blade Power Amplifier Module Features • • • • • Applications THD: <0.003% SNR: 122dB typical Differential audio input Module dimensions: 24mm x 22mm SMT Mounting • • • AV home audio, iPod docks, linear

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

VS-GA100NA60UP

Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

VS-GA100NA60UP

Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

TRANSISTOR TC 100

Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

28F128W18

Abstract: 28F320W18 28F640W18 intel DOC
Contextual Info: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed

PH28F640W30BD70

Abstract: ge28f640w30td70 8857H 28F128W30 28F320W30 28F640W30 intel DOC GE28F640W30-B
Contextual Info: Intel Wireless Flash Memory W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features • ■ ■ ■ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed

EXEL60VA

Contextual Info: Indice Semiconductor Pty Ltd – Application Note Version: 0.3 INDICE00A2 LED Driver Chip Application Note Indice Semiconductor Pty Ltd – INDICE00A2 LED Driver Chip Version 0.3 Status Release Last Saved 8/04/2015 9:43:00 AM Last Printed 10/02/2015 4:37:00 PM

8857H

Abstract: 28F128W30 28F320W30 28F640W30 intel DOC
Contextual Info: Intel Wireless Flash Memory W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed

PH28F640W18BE60

Abstract: PH28F640W18BD60 PH28F640W18TE60 PH28F320W18BE60 GE28F640W18TE60 PH28F640W18 GE28F640W18BD60 GE28F640W18TD60 28F128W18 28F320W18
Contextual Info: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed

3132* intel

Contextual Info: Intel Wireless Flash Memory W18 with A/D Multiplexed I/O Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 54 MHz — 60 ns Initial Access Read Speed — 14 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed

61A hall

Abstract: gaussmeter 27701 4 pin hall effect AC CURRENT TESLA Manufacturer 27701-AN ALLEGRO U PACKAGE AN 27701 triac contactless AC main detector Sensor
Contextual Info: Application Information Hall-Effect IC Applications Guide Allegro MicroSystems uses the latest integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches and sensor ICs with the

PTH08T240W

Abstract: PTH08T241W TMS320 SLTS264J
Contextual Info: PTH08T240W, PTH08T241W www.ti.com . SLTS264J – NOVEMBER 2005 – REVISED JUNE 2009 10-A, 4.5-V to 14-V INPUT, NON-ISOLATED, WIDE-OUTPUT, ADJUSTABLE POWER

Contextual Info: PTH08T240W, PTH08T241W www.ti.com . SLTS264J – NOVEMBER 2005 – REVISED JUNE 2009 10-A, 4.5-V to 14-V INPUT, NON-ISOLATED, WIDE-OUTPUT, ADJUSTABLE POWER

Contextual Info: PTH08T240W, PTH08T241W www.ti.com . SLTS264I – NOVEMBER 2005 – REVISED MARCH 2009 10-A, 4.5-V to 14-V INPUT, NON-ISOLATED, WIDE-OUTPUT, ADJUSTABLE POWER

Contextual Info: PTH08T240W, PTH08T241W www.ti.com . SLTS264J – NOVEMBER 2005 – REVISED JUNE 2009 10-A, 4.5-V to 14-V INPUT, NON-ISOLATED, WIDE-OUTPUT, ADJUSTABLE POWER

T530X337M006ASE015

Abstract: PTH08T240W 4PTB337MD6TER PTH08T241W TMS320 CI 7400 T530X108M2R5ASE005 597D227X
Contextual Info: PTH08T240W, PTH08T241W www.ti.com. SLTS264H – NOVEMBER 2005 – REVISED DECEMBER 2008 10-A, 4.5-V to 14-V INPUT, NON-ISOLATED,

Contextual Info: High Efficiency 5V, 10A Buck Regulator ISL95210 Features The ISL95210 is a high-efficiency step-down regulator that can deliver 10A of output current from a 5V input. The small 4mmx6mm QFN package and only four external components provide a very small total solution size. Low resistance internal