DATASHEET IC 555 Search Results

Contextual Info: Preliminary Datasheet 2SB1691 R07DS0272EJ0400 Rev.4.00 Jan 10, 2014 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK SC–59A Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)

Contextual Info: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP65T43DPM R07DS1201EJ0100 Rev.1.00 Apr 23, 2014 650V - 20A - IGBT Application: Power Factor Correction circuit Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) • Isolated package

Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60T04DPQ-A1 600V - 30A - IGBT Application:Current resonance circuit R07DS1191EJ0200 Rev.2.00 Apr 02, 2014 Features • Optimized for current resonance application • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet TBB1012 R07DS0317EJ0400 Rev.4.00 Jan 10, 2014 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

BB506C

Contextual Info: Preliminary Datasheet BB506C R07DS0288EJ0300 Rev.3.00 Jan 10, 2014 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise

Contextual Info: Atmel ATA6285/ATA6286 Embedded AVR Microcontroller with LF Receiver and UHF Transmitter DATASHEET Features 8-bit Atmel AVR® RISC low-power microcontroller Embedded ultra-low-power flash 8-bit AVR Atmel ATA6289 with on-chip sensitive LF receiver, temperature sensor and integrated UHF transmitter IC

ATA6289

Abstract: PCB Antenna 125KHz 125khz RFID schematic RFID access control ata5757
Contextual Info: Atmel ATA6285/ATA6286 Embedded AVR Microcontroller with LF Receiver and UHF Transmitter DATASHEET Features ● 8-bit Atmel AVR® RISC low-power microcontroller ● Embedded ultra-low-power flash 8-bit AVR Atmel ATA6289 with on-chip sensitive LF receiver, temperature sensor and integrated UHF transmitter IC

Contextual Info: Preliminary Datasheet TBB1016 R07DS0318EJ0400 Rev.4.00 Jan 10, 2014 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.

555 timer ic

Contextual Info: Evil Mad Scientist Laboratories / evilmadscientist.com 175 San Lazaro Ave., Ste. 150 Sunnyvale CA 94086 Questions? Please contact us: sales@evilmadscientist.com DATASHEET The “Three Fives” Discrete 555 Timer Kit version 2.0 Re-create one of the most classic, popular,

um1233

Abstract: HONEYWELL MODULATOR MOTOR RS7660 siemens servo motor connector tms 1601 Burr Brown PWR 74 ORP 12 SIMATIC S5-100u programming cable 014374 SN 576B
Contextual Info: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.

IRG4BC40F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1454 IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4BC40U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1456C IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

TMS320C6XXX

Abstract: TMS320C6x TI DSP TMS320C6xx POWR605 TMS320 power supply circuit semiconductor multiple circuits features TMS320C6x
Contextual Info: RELIABLE RESET GENERATION FOR TI TMS320C6XXX “DAVINCI” PROCESSORS A Lattice Semiconductor White Paper March 2010 Lattice Semiconductor 5555 Northeast Moore Ct. Hillsboro, Oregon 97124 USA Telephone: (503) 268-8000 www.latticesemi.com 1 Reliable Reset Generation for TI DSP Processors

IRG4BC40S

Abstract: TO-220AB IRG4BC40S
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1455 IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: Datasheet LED Driver for Lighting Series Electrolytic Capacitor Free Buck Converter LED Driver BD555A1AFV ●General Description BD555A1AFV is a LED driver best for LED lighting applications. It supports dimming. Constant current switching controller for AC/DC buck converter is

2N5551B

Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

em 18 reader

Abstract: ID 13 transponder transponder chip g
Contextual Info: Tem ic TK5550 S e mi c o n d u c t o r s Read/Write Transponder Description T he T K 5550 is a com plete program m able RAV transponder, w hich im plem ents all im portant functions for identification system s. It allow s the contactless reading and writing o f data, w hich are transm itted

2n5551

Abstract: 2N5551 SOT23
Contextual Info: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1

IC LM555

Abstract: CI LM555 LM555 lm555 d lm555 application notes of IC LM555
Contextual Info: SINGLE TIMER LM555/I SINGLE TIMER The LM555/I is a highly stable contro lle r capable of producing accurate tim ing pulses. W ith m onostable operation, the tim e delay is controlled by one external and one capacitor. W ith astable operation, th e frequency

FGH40T120SMD

Contextual Info: FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum

ZXTN

Abstract: TS16949 ZXTN5551G ZXTP5401G 5551 transistor
Contextual Info: ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 2W Complementary part number ZXTP5401G Description C A high voltage NPN transistor in a high power dissipation surface mount package B Features • 160V rating

Intersil ignition IGBT

Abstract: 350VVGE
Contextual Info: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2000 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Title This N-Channel IGBT is a MOS gated, logic level device GT1 which is intended to be used as an ignition coil driver in 4N4 automotive ignition circuits. Unique features include an