613 GB 123 CT
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S
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BT3904
Abstract: MBT3904T
Contextual Info: To Lynn Murphy From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 08/18/97 09:22 03/08 Order this data sheet by M M BT3904T/D M OTOROLA SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n A n n u lar T ran sisto r • • • • • S w itching Transistor Designed fo r Low C urrent S w itching
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NEC Ga FET marking L
Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO
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ne434s01nec ga fet marking lap 2761 l transistornec d 822 p+5nec gaas fet markingnec 2761nec 426nec ga fetlow noise fet nec u
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T1500TA25E
Abstract: transistor polar D-68623 T1500
Contextual Info: Date:- 1 Dec, 2003 Prospective data Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T1500TA25E MAXIMUM LIMITS UNITS Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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MJ 5030
Abstract: westcode igbt
Contextual Info: Date:- 18 Jun, 2003 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T0250NA52E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
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MJ 5030
Abstract: T0900TA52E
Contextual Info: Date:- 17 Jun, 2003 Provisional Data Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0900TA52E MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
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IGBT 2000V .50A
Abstract: t0160na
Contextual Info: Date:- 5 Nov, 2003 Provisional Data Data Sheet Issue:- 4 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0160NA52A MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
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t0160na52aigbt 2000v .50at0160na |
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IC650
Abstract: MJ1000
Contextual Info: Date:- 18 Jun, 2003 Provisional Data Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0650TA52A MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0360NA25A
Abstract: D-68623 T0360 TX031NA25A
Contextual Info: WESTCODE Date:- 28 Aug, 2002 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Bi-Polar Gate Transistor Type T0360NA25A Development Type Number: TX031NA25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage
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Contextual Info: WESTCODE An Date:- 25 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T2250AB
Contextual Info: WESTCODE An Date:- 25 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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transistor k702
Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
Contextual Info: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.
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cpd0603076c0cf-18cf-18jhuzbzzk1mn04b00073+15k1ka07ba0014c0ebh0000457c1db00001351xp0431200lunr9113j0ltransistor k702transistor k703transistor k79transistor k215transistor k550k206 transistortransistor k822cn701transistor k620transistor k230
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T1800GB
Abstract: T1800GB45A D-68623 IC500A westcode t1800 westcode t1800gb45a
Contextual Info: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T1800GB45A
Contextual Info: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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motorola 9100-11
Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC
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mc33120/dmc33120motorola 9100-11battery managements+7mc33120pmjd41rs 3060 cj1n4002mc33120fnst12st21
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LMT2903N
Abstract: lmt2903 LMT393 LMT393D LM 2903 MOTOROLA LMT2903D T393 LM 797 T2903 LMT39
Contextual Info: Tö Lÿnh Mürphÿ Fréni Motorola Desìqn-NÉT Ph:602-244-659i Fäx:6Ö2-244-6693 797 13:55 MOTOROLA LMT393, LMT2903 • SEMICONDUCTOR TECHNICAL DATA ADVANCE INFORMATION DUAL SINGLE SUPPLY COMPARATORS □UAL COMPARATORS The LMT393family of comparators are dual independent voltage
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602-244-659ilmt393lmt2903lmt393family+8t2903lmt2903nlmt393dlm 2903 motorolalmt2903dt393lm 797lmt39
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2N7440
Abstract: MIL-PRF19500 c 3421 transistor 2N7441
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. INCH-POUND MIL-PRF-19500/659 20 August 1998
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CA3103E
Abstract: ca3103 LVB 1.32 TA6103 CA3146E ca3183
Contextual Info: j j j CA3146, CA3183 HARRIS S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA31B3A, and CA3183* are general purpose high vollage silicon n-p-n transistor arrays
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ca3146ca3183ca3146aca31b3a+5ca3103eca3103lvb 1.32ta6103ca3146e
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BTS555P
Abstract: TO218AB package SIEMENS 3 TB 40 12 - 0A TO-218AB Package TO-218AB siemens 12V small relays SIEMENS 3 TB 40 10 - 0A Smart Highside High Current Power Switch
Contextual Info: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection
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o-218ab/5bts555pq67060-tbd-tbde3146+8023sbosto218ab packagesiemens 3 tb 40 12 - 0ato-218ab packageto-218absiemens 12v small relayssiemens 3 tb 40 10 - 0asmart highside high current power switch
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HEF4050BP
Abstract: hef4050bt HEF4050B
Contextual Info: HEF4050B Hex non-inverting buffers Rev. 07 — 1 December 2009 Product data sheet 1. General description The HEF4050B provides six non-inverting buffers with high current output capability suitable for driving TTL or high capacitive loads. Since input voltages in excess of the
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HEF4050B
Abstract: HEF4050BP HEF4050BT
Contextual Info: HEF4050B Hex non-inverting buffers Rev. 06 — 23 July 2009 Product data sheet 1. General description The HEF4050B provides six non-inverting buffers with high current output capability suitable for driving TTL or high capacitive loads. Since input voltages in excess of the
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V23990-P444-C-PM
Contextual Info: data sheet version 02/03 V23990-P444-C-PM flow PIM 0+E, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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HEF4050B
Abstract: HEF4050BP HEF4050BT JESD22-A114E
Contextual Info: HEF4050B Hex non-inverting buffers Rev. 05 — 11 November 2008 Product data sheet 1. General description The HEF4050B provides six non-inverting buffers with high current output capability suitable for driving TTL or high capacitive loads. Since input voltages in excess of the
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transistor 6y
Abstract: HEF4050B HEF4050BP HEF4050BT JESD22-A114E
Contextual Info: HEF4050B Hex non-inverting buffers Rev. 04 — 2 July 2008 Product data sheet 1. General description The HEF4050B provides six non-inverting buffers with high current output capability suitable for driving TTL or high capacitive loads. Since input voltages in excess of the
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