DATA SHEET OF MULTILAYER PCB Search Results

Contextual Info: Ceramic transient voltage suppressors SMD multilayer varistor, E series Series/Type: Ordering code: CT0603S17BCCG B72500E5170S160 Date: Version: 2011-12-06 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

Contextual Info: Ceramic transient voltage suppressors SMD multilayer varistor, E series Series/Type: Ordering code: CT1206K17G B72520E0170K062 Date: Version: 2012-05-21 1 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

Contextual Info: Ceramic transient voltage suppressors SMD multilayer varistor, E series Series/Type: Ordering code: CT0805K17AUTOLCG B72510E2170K062 Date: Version: 2012-02-15 1 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

B72540V1140S262

Abstract: CN2220S14BAUTOG VAR9307A K 250 VARISTOR
Contextual Info: Metal Oxide Varistors SMD Multilayer Varistor with AgPd Termination CN2220S14BAUTOG B72540V1140S262 Data Sheet Designation system: CN 2220 S.B 14 AUTO G = Chip Not molded = Dimensions of the device 22x20 length x width in 1/100 inch = Special tolerance B of the varistor voltage

adp5034

Contextual Info: Dual 3 MHz, 1200 mA Buck Regulators with Two 300 mA LDOs ADP5034 Data Sheet FEATURES The high switching frequency of the buck regulators enables tiny multilayer external components and minimizes the board space. When the MODE pin is set to high, the buck regulators operate in

VAR9733A

Abstract: B72762A8140S160 CA04P2S14THSG varistors smd Epcos 5000 VARISTOR
Contextual Info: Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination CA04P2S14THSG B72762A8140S160 Preliminary data sheet parameters may be changed if necessary Designation System CA 04 P 2 S 14 T HS G = Chip Array = Dimensions of the device 04x05 (Length x width in 1/100 inch)

CAN4311* antenna

Abstract: 433 antenna chip Yageo antenna 433 mhz antenna pcb CAN4311 FR4 SUBSTRATE ANTENNA SHEET making LU ANTENNA HF MOUNTING PROCEDURE YAGEO DATE CODE LINEAR TECHNOLOGY date code
Contextual Info: ANTENNA PRODUCTS WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification QUICK REFERENCE DATA Size 16.5*14*0.9 mm Working Frequency 850~950MHz Gain 1.5 dBi Max VSWR 2 max Polarization Linear Azimuth Omni-directional Impedance 50Ω Operating Temperature

smd diode r5a

Abstract: R7B Connector smd j1a jack p2 3.5mm R5B transistor smd r4b smd r5b L2 SOT23-8
Contextual Info: DEM-OPA2652E EVALUATION FIXTURE DESCRIPTION COMPONENTS Components that have RF performance similar to the ones in Table I may be substituted. The DEM-OPA2652E demonstration board is an unpopulated printed circuit board PCB for the high speed dual op amps in SOT23-8 packages. Figure 1

RF35

Contextual Info: BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF6G22LS-100

Abstract: RF35 TRANSISTOR SMD BV
Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

C4532X7R1E475M

Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf
Contextual Info: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

blf878

Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
Contextual Info: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from

Phycomp

Abstract: FR4 SUBSTRATE MICROSTRIP ANTENNA SHEET Material phycomp 60Ghz AN2450000707051K RD4000 24-5F microstrip antenna 2.45 microstrip antenna wlan antenna bluetooth 2.45GHz PCB substrate
Contextual Info: MULTILAYER CERAMIC ANTENNA FOR BLUETOOTH & WLAN IEEE 802.11b 2.45G Hz ISM Band Product Specification QUICK REFERENCE DATA Central Frequency* 2.45 GHz Bandwidth >100 MHz Gain 1.2dBi max VSWR 2.0 max Polarization Linear Azimuth Omni-directional Impedance*

BLF6G22-45

Abstract: BLF6G22S-45 ROGERS DUROID
Contextual Info: BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

printed antenna dcs 1800

Abstract: Material phycomp microstrip antenna for gsm 900mhz chip antenna gsm antenna PCB GSM ANTENNA RF pcb antenna for GSM DCS1800 Phycomp ANTENNA HF MOUNTING PROCEDURE
Contextual Info: MULTILAYER CERAMIC ANTENNA FOR GSM/DCS 900/1800MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Frequency Range 880-960 MHz 1710-1880 MHz Bandwidth 30 MHz 170 MHz (Dependant on ground plane size and tuning circuit of customer) Peak Gain 900MHz

BLF6G22LS-100

Abstract: RF35
Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

C570X7R1H106KT000N

Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

transistor C3

Abstract: BLF6G20-45
Contextual Info: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 — 25 August 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

Contextual Info: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The

BLL6H1214-500

Abstract: 800B
Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 01 — 20 January 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

BLF369-NXP

Abstract: transistor r8 BLF369 EZ90-25-TP VHF transmitter circuit
Contextual Info: BLF369 Multi-use VHF power LDMOS transistor Rev. 04 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.

BLA1011-300

Contextual Info: BLA1011-300 Avionics LDMOS transistors Rev. 02 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance

transistor 9575

Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
Contextual Info: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Contextual Info: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance