DATA RETENTION Search Results

semirigid

Abstract: A23J1PC-000-10 A23J2PC-000-10
Contextual Info: SMA Coaxial Connectors SMA Koaxialkontakte Technical Data Technische Daten Mechanical Data Mechanische Daten Mechanical Data Mechanische Daten Engagement torque Verbindungsdrehmoment Mating torque Anzugsdrehmoment Coupling nut retention Überwurfmutter Haltekraft

Contextual Info: Low Voltage Data Retention HARRIS CMOS RAMs are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The follow ing rules insure data retention: 1. Chip Enable E must be held high during data retention; within VCC to VCC +0.3V

Contextual Info: - — - Low Voltage Data Retention - HARRIS CMOS RAMs are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules insure data retendtion: 1. Chip Enable E must be held high during data retention; within VCC to VCC +0.3V

48Z02

Abstract: 232268 "lithium battery pack" pinout
Contextual Info: Issued March 1997 232-2683 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data

48Z02

Abstract: "lithium battery pack" pinout
Contextual Info: Issued March 1987 005-471 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data

mss1000

Abstract: MSS-1000
Contextual Info: MSS1000RKX-2S/3Q/35 ISSUE 2.0 : DECEMBER 1892 Low Data Retention C h aracteristics - L Version O nly (TA=0°C to +70°C Param eter Sym bol CS^V^-O^V Vœ for Data Retention Data Retention Current C S high to Data Retention Time S ee Retention Waveform Operation Recovery Time

dsPIC30F2011

Abstract: DC10 DC11
Contextual Info: dsPIC30F2011/2012/3012/3013 dsPIC30F2011/2012/3012/3013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications

DC10

Abstract: DC11 6014A
Contextual Info: dsPIC30F6011A/6012A/6013A/6014A dsPIC30F6011A/6012A/6013A/6014A Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications

DS1213C

Abstract: dallas ds1213c DS1213B DS1213
Contextual Info: DS1213C SmartSocket 256k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection

6508 RAM

Abstract: 1m x 8 CMOS RAM
Contextual Info: PAGE LOW VOLTAGE DATA RETENTION . 2-2 INDUSTRY CMOS RAM CROSS R EFEREN CE. 2-3 1K CMOS RAM DATA SHEETS

DC10

Abstract: DC11 OS65B
Contextual Info: dsPIC30F2010 dsPIC30F2010 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 22-4 on page 148) has changed from 1.5V

smartsocket

Contextual Info: DS1213C SmartSocket 256k www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection

IM1225Y-150

Abstract: 1225Y-150 1225Y eprom Innovative
Contextual Info: INNOVATIVE IM1225Y-150 8K X 8 Nonvolatile SRAM FEATURES Data Retention in the absence of power • Pin configuration Automatic data protection during power failure · Data Retention over 10 years · Unlimited write cycles · Conventional SRAM write cycles ·

dallas ds1213c

Abstract: 28-pin static ram smartsocket DS1213B DS1213C
Contextual Info: DS1213C DS1213C SmartSocket 256K FEATURES PIN ASSIGNMENT • Accepts standard 32K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data • Data retention time is greater than 10 years with the

DS1213C

Abstract: DS1213B
Contextual Info: DS1213C SmartSocket 256k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection

Contextual Info: DS1200 Serial RAM Chip www.maxim-ic.com FEATURES § § § § § § PIN ASSIGNMENT 1024 Bits of Read/Write Memory Low Data Retention Current for Battery Backup Applications Four Million Bits/Second Data Rate Single-Byte or Multiple-Byte Data Transfer Capability

M34W

Abstract: M34W02-W
Contextual Info: M34W02 2Kbit Serial EEPROM with Software Data Protection PRELIMINARY DATA TWO WIRE I2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for M34W02 – 2.5V to 5.5V for M34W02-W

DC10

Abstract: DC11 dsPIC30F5011
Contextual Info: dsPIC30F5011/5013 dsPIC30F5011/5013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-4 on page 168) has changed from 1.5V

DS1213B

Contextual Info: DALLAS DS1213B SmartSocket 16k/64k mmimmumm î com FEATURES PIN ASSIGNMENT Accepts standard 2K x 8 or 8K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years

DS70135E

Abstract: DC10 DC11 dsPIC30F4011 4012
Contextual Info: dsPIC30F4011/4012 dsPIC30F4011/4012 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-4 on page 172) has changed from 1.5V

Contextual Info: DS1230YL/BL DALLAS DS1230YL/BL 256K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE PS1230Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss

DS1213C

Abstract: smartsocket
Contextual Info: DS1213C DALLAS SEMICONDUCTOR FEATURES DS1213C SmartSocket 256K PIN ASSIGNMENT • Accepts standard 32K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data • Data retention time is greater than 10 years with the

DS1200

Contextual Info: DS1200 Serial RAM Chip www.maxim-ic.com FEATURES § § § § § § PIN ASSIGNMENT 1024 bits of read/write memory Low data retention current for battery backup applications Four million bits/second data rate Single-byte or multiple-byte data transfer capability

DC10

Abstract: DC11
Contextual Info: dsPIC30F6010A/6015 dsPIC30F6010A/6015 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-5 on page 177) has changed from 1.5V