DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE C Search Results

t01 transistor

Abstract: STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor
Contextual Info: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode

sanken SAP16

Abstract: sap16 SAP16P LF550 LF550 outline SAP16*p transistor 0882 marking FA 5pin toshiba TLX transistor darlington sap16p
Contextual Info: .b fin ite n £ » SANKEN ELECTRIC COMPANY, LTD. DEVICE TYPE NAME KR^X> y S A P 1 6 P LF550 150W Darlington Transistor with built-in temperature compensation diodes and an emitter resistor SAP16P (LF550) Scope C omtek, Y R v m s a p i6 p K -o v m m rn 'th o

TIP110 equivalent

Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220

TIP142TU

Abstract: TIP141LTU tip140 equivalent
Contextual Info: TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145/146/147 TO-3P 1 NPN Epitaxial Silicon Darlington Transistor

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

Contextual Info: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use

1412D

Abstract: UDN2983A equivalent 1411d M54522P equivalent DARLINGTON SINK DRIVER TLP251 equivalent M54563P equivalent ULN2804A application relay driver ic ULN2804 td62304ap
Contextual Info: TOSHIBA INTERFACE DRIVER ULN2000 TD62xxx TD62Mxxx TB62xxx SERIES SERIES SERIES SERIES Internal Internal&&External ExternalConcept Concept Applicable to Hi-Speed BiCMOS Applicable to Hi-Voltage BiCMOS Graphics MOVEMENT Video Signal MPU Pentium PowerPC ALPHA

HOA1404-3

Contextual Info: HONEYWELL INC/ MICRO 41E D • 4S51630 D013fifi3 0 ■ H O N 1 7 = # * < 0 / T- Ml-73 Reflective With Hermetic Components Assemblies Honeywell offers the world’s largest line of reflective assemblies built with hermetic components. HOA1160 uses components from the SE2450IRED, S02440

Contextual Info: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • • • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. Industrial Use Complement to TIP140T/141T/142T Equivalent Circuit

Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

tip117

Abstract: TIP116
Contextual Info: TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use

tip107

Abstract: TIP105
Contextual Info: TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

four-layer diode

Abstract: A CLIPPER CIRCUIT APPLICATIONS noise diode generator squarewave generator notes Zener Diode B triangle wave application note Zener Diode high frequency applications SWITCHING TRANSISTOR 144 Power supply AC to DC zener diode CCL0750
Contextual Info: CLD Application Notes Connection Options Series–Higher voltages may be obtained by connecting identical CLDs in series Figure 4 . Voltage balancing resistors are recommended. Since the resistors shunt the output resistance, their values should be high.

NPN Transistor 8A

Abstract: TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107

darlington transistor with built-in temperature c

Abstract: BU323Z
Contextual Info: MOTOROLA Order this document by BU323Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,

ic1 555

Abstract: ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 555 timer astable multivibrator 790A ZSD100 Piezo Transducers voltage controlled oscillator using ic 555
Contextual Info: Application Note 16 Issue 1 March 1996 Application Note 16 Issue 1 March 1996 ZD1 Automotive and Household Siren Driver Circuits D5 R6 +12V C5 R12 ZSD100 and Discrete ’H’ Bridge Minimum Part Count Solution R13 D2 D4 TR6 TR4 David Brotton Neil Chadderton

2N6056

Abstract: 2N6054 npn darlington transistor 200 watts 2A 80v complementary transistor
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6054,2N6056 100 WATT 8 A M P CONTINUOUS, 16 A M P PE A K ‘MAXIMUM RATINGS P A RA M ET ER • Electrical specifications guaranteed at 25°C • Guaranteed minimum DC current gain at full rated current • Hermetically sealed

BU323Z

Abstract: free ic 555 BU323Z-D transistor ignition circuit
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

TRANSISTOR ARRAY

Abstract: NTE2083
Contextual Info: NTE2083 Integrated Circuit 6−Segment, 150mA Darlington Transistor Array Description: The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive. With built−in protective diodes against negative inputs, it is advantageous in designing drive circuits for printer calculators and cash registers.

2N6385

Abstract: 2N6650
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6385,2N6650 100 WATT 10 A M P CONTINUOUS, 15 A M P PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SYM BO L Collector Em itter Voltage Collector Base Voltage Em itter Base Voltage V ebo Collector Current Continuous Peak*

Contextual Info: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T

Contextual Info: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package.