DARLINGTON TRANSISTOR TO251 Search Results

Contextual Info: KSB907 KSB907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor

transistor c1510

Abstract: C652I3 BTC1510I3 C1510
Contextual Info: CYStech Electronics Corp. Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510I3 Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.

transistor c1510

Abstract: c1510 transistor c1510 C-1510 BTC1510I3 C652I3
Contextual Info: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510I3 Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date :2009.02.04 Page No. : 1/6 150V 10A 220mΩ Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

MID117

Contextual Info: DC COMPONENTS CO., LTD. R MID117 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.

power transistor Ic 4A NPN to - 251

Abstract: MID112 VCEO100
Contextual Info: DC COMPONENTS CO., LTD. R MID112 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.

power transistor Ic 4A NPN to - 251

Abstract: MID122
Contextual Info: DC COMPONENTS CO., LTD. R MID122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning .268 6.80 .252(6.40) 1 = Base 2 = Collector

Darlington Transistor TO251

Abstract: MJD112
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary darlington power transistors dpak for surface mount applications 2. COLLECTOR 3. EMITTER

Contextual Info: KSH122 / KSH122I NPN Silicon Darlington Transistor Description Features • • • • • • • Designed for general-purpose power and switching, such D-PAK for Surface Mount Applications as output or driver stages in applications. High DC Current Gain

marking code k1

Abstract: marking A1 TRANSISTOR HI127
Contextual Info: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Darlington Transistor TO251

Abstract: to-252-2
Contextual Info: MJD112 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value

Contextual Info: KSD1222 KSD1222 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor

MJD122

Abstract: JESD97 MJD122-1 MJD122T4 MJD127
Contextual Info: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)

HP122

Abstract: DARLINGTON 3A 100V npn transistor Ic3A NPN
Contextual Info: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U █ APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

NEC 10F triac

Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Contextual Info: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2

diode 0336 A

Contextual Info: KSH112 KSH112 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP112

Contextual Info: KSH127 KSH127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127

tip122 D-PAK package

Abstract: equivalent of TIP122
Contextual Info: KSH122 KSH122 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP122

Contextual Info: KSH117 KSH117 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP117

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

TG-600PH-WH

Abstract: smd transistor BC1
Contextual Info: UM10510 120 V AC 17 W dimmable demo board using the SSL2103 Rev. 1 — 16 January 2012 User manual Document information Info Content Keywords SSL2103, AC mains supply, dimmable LED driver, AC/DC conversion Abstract This user manual describes a demo board for evaluating an AC mains

Contextual Info: UM10509 230 V AC 17 W dimmable demo board using the SSL2103 Rev. 1 — 16 January 2012 User manual Document information Info Content Keywords SSL2103, AC mains supply, dimmable LED driver, AC/DC conversion Abstract This user manual describes a demo board for evaluating an AC mains