DARLINGTON TIP 42 Search Results

3055 5C pnp transistor

Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Contextual Info: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •

MPSU52

Abstract: transistor tip 46 MPS-U52 TIP 41 transistor tip142 darlington transistor tip 142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN T IP I 40 Darlington Com plem entary Silicon Power Transistors TIP 141* . . . designed for general-purpose amplifier and low frequency switching applications. T IP I 4 2 * • • • High DC Current Gain — Min hpE = 1000 @ Iq = 5 A, V ^ e = 4 V

mj 3055 npn

Abstract: mt 3055 PIT 3055 TIP 122 transistor APPLICATION circuit tipL22 TIP 122 transistor TIP 42 transistor TIP122 texas instrument TRANSISTOR tip122 BD 147
Contextual Info: TY P ES TIP120, TIP121, TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRAN SISTO RS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH TIP 1 2 5 , T IP 1 2 6 , TIP127 • 65 W at 2 5 °C Case Temperature • Min h p E of • 5 A Rated Collector Current

darlington tip

Abstract: tip 127 texas BD 147 tip 127 texas instruments TIP5530 tip darlington pnp TIP 122 tip 127 darlington tip 42 TIP NPN BD633
Contextual Info: Ptot@ Typ type NPN PNP TIP 35 B TIP 36 B 90 80 25 25 100 1,5 TIP 35 C TIP 36 C 90 100 25 25 100 1,5 TIP 41 TIP 42 65 40 6 15 75 3 TIP 41 A TIP 42 A 65 60 6 15 75 3 TIP 41 B TIP 42 B 65 80 6 15 75 3 TIP 41 C TIP 42 C 65 100 6 15 75 3 TIP 3055 TIP 5530 90 70

TIP41C EQUIVALENT

Abstract: tip 147 TRANSISTOR equivalent TIP418 TIP 122 transistor TIP 41 transistor tip 127 TRANSISTOR equivalent TIP41A equivalent tip 147 TRANSISTOR tip 141 equivalent tlp418
Contextual Info: T Y P ES TIP41, TIP41A, TIP41B, TIP41C N -P -l SIN GLE-D IFFU SED M ESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R AN D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E WITH T IP 4 2 , T IP 4 2 A , TIP 4 2 B , T IP 42C

transistor tip 412

Contextual Info: P0Ù1EREX m 3<iE D INC ¥ E R E m S mP RX DD0M500 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107,72003 Le Mans, France (43) 41.14.14 r - $ l'3 £ ' KD221K75HB High-Beta Dual Darlington

TIP 41c transistor

Abstract: TIP 41 transistor Power transistor TO-220 NPN 100 V, TIP 41C transistor tip 41a TIP41 tip41 darlington TIP 41A NPN transistor TIP 41c TIP41B TIP 41
Contextual Info: TIP 41 series TIP41/41A//41B/41C TIP41/41A/41B/41C ◎ SEMIHOW REV.A0.Oct 2007 TIP 41 series (TIP41/41A//41B/41C) TIP41/41A/41B/41C Medium Power Linear Switching Applications - Complement to TIP42/42A/42B/42C Absolute Maximum Ratings CHARACTERISTICS Ta=25℃ unless otherwise noted

TIP42

Abstract: TIP 41c transistor TIP42/42A/42B/42C TIP 42c transistor transistor TIP 42 TIP 42 transistor tip 42c transistor tip 41a transistor 42A TIP 42 transistor
Contextual Info: TIP 42 series TIP42/42A//42B/42C TIP42/42A/42B/42C ◎ SEMIHOW REV.A0,Oct 2007 TIP 42 series (TIP42/42A//42B/42C) TIP42/42A/42B/42C Medium Power Linear Switching Applications - Complement to TIP41/41A/41B/41C Absolute Maximum Ratings CHARACTERISTICS Collector-Base Voltage

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

B0738

Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m

B0638

Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
Contextual Info: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g

MSA4709A

Abstract: 24v 8 channel Relay driver transistor ZR Equivalent of transistor tip 420 TIP 22 transistor tip 420 transistor pabx transister relay driver circuit using transistor pnp transister symbol
Contextual Info: E2A0032-16-X0 ¡ Semiconductor MSA4709A ¡ Semiconductor This version: MSA4709A Jan. 1998 Previous version: Nov. 1996 Subscriber Line Interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance

ITC117P

Abstract: LOC110 electronic schematic
Contextual Info: APPLICATION NOTE AN-114 ITC117P Integrated Telecom Circuit AN-114 Clare’s Integrated Telecom Circuit ITC117P features combined circuitry in one 16 Pin SOIC package for: • • • • 1-Form-A Solid State Relay for use as Hookswitch Bridge Rectifier Darlington Transistor

KY2 transistor

Abstract: transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55
Contextual Info: O K I Semiconductor MSA4709A Subscriber Line interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformet circuit. FEATURES • B Battery feed , S (Supervision), and H (Hybrid) functions integrated on chip.

JAM transister

Abstract: A4709A
Contextual Info: E2A0032-16-XO O K I Semiconductor MSA4709A This version: Jan. 1998 Previous version: Nov. 1996 S ubscriber Line Interface Circuit G ENERAL DESCRIPTION The MS A4709A is designed to provide BSH functions and tomeetPABX transmission performance requirements.

mark 74w npn

Abstract: Line Input AC to DC Conversion and Input Filter Capacitor Selection IAC24 tip 420 transistor PNP Relay Driver tip darlington pnp AL24 IL400 MSA4709A MSA4709ASS
Contextual Info: E2A0032-16-XO O K I Semiconductor P rev io u s version: N ov. 1996 M SA 4709A Subscriber Line Interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device provides two-wire to four-wire conversion function Hybrid .

TIP42C EQUIVALENT

Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C

Contextual Info: te s SLOTTED OPTICAL SWITCH DPTDELECTROHICS CNY29 J 11 PACKAGE DIMENSIONS SYMBOL r-°T M ILLIM ETER S M IN. t r 3 - i* > r L b’ SECTIO N X - X T IN C H E S MIN. 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119 .125 .024 .030 a 2 b, D D, d2 e2

ST1161

Abstract: 25CC H22B4 H22B5 H22B6 K300 ST1157
Contextual Info: E O SLOTTED OPTICAL SWITCH OPTOELECTRONICS H22B4/5/6 PACKAGE DIMENSIONS -D1 - SYMBOL — \ 02 k - T A bi t v ita i A, b b, 3 S E C T IO N X - X LE A D PR O FILE ! ST1340-01 MILLIMETERS INCHES MIN. MAX. MIN. MAX. 10.7 11.0 .422 .433 3.0 3.2 .119

ST1149

Abstract: ST1152 h2181 H21B1 slotted optical switch H21B H21B2 H21B3 STI339-02
Contextual Info: S T i SLOTTED OPTICAL SWITCH OPTOELECTRONICS H21B1/2/3 PACKAGE DIMENSIONS - D i - SYMBOL MILLIMETERS MIN. -0 P ©1 "t= \¿ 6 bi S E C T IO N X - X J L E A D P R O F ILE ST1339-01 MAX. INCHES MIN. MAX. .433 A 10.7 11.0 .422 A, 3.0 3.2 .119 .125 a2

H22B1

Abstract: ST1152 H22B2 H22B3 75I1
Contextual Info: I S O SLOTTED OPTICAL SWITCH OPTOELECTRONICS H22B1/2/3 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. < >b 3 bi SECTION X - X LEAD PROFILE MAX. INCHES MIN. MAX. .433 A 10.7 11.0 .422 A, 3.0 3.2 .119 .125 .024 .030 b b, D, .600 .750 .50 NOM. 11.6 12.0 .020 NOM.

ST1161

Abstract: H21B H21B4 H21B5 H21B6 ST1162
Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS H21B4/5/6 PACKAGE DIMENSIONS - D i- SYMBOL MIN. ~1b1 MILLIMETERS © r 3 " t= j e j bn S E C T IO N X - X Î L E A D P R O F ILE ST1339-01 MAX. INCHES MIN. MAX. .422 .433 .125 A 10.7 11.0 A, 3.0 3.2 .119 A, 3.0

Contextual Info: SLOTTED OPTICAL SWITCH lU I E im iillC i H21B1/2/3 SYMBOL A ' t @ 6, =4 SECTION X - X~T~ LEAD PROFILE 8T133»-0t A, A; b. P 0, 0; Si £ L MILLIMETERS MIN. MAX. 10.7 1V0 3.0 3Z 30 3.2 600 .750 .50 MOM, 247 24.3 11.8 3.0 6.9 2,3 6.15 12.0 INCHES MIN MAX .422

Contextual Info: O K I semiconductor MSA4709 SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The MSA4709 is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformer circuit. FEATURES • B Battery feed , S (Supervision), and H