DARLINGTON COMPLEMENTARY 120V Search Results

pin diagram of ic 4066

Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Contextual Info: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.

pin diagram of ic 4066

Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent
Contextual Info: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,

Complementary Darlington Audio Power Amplifier

Abstract: audio Darlington 6A complementary npn-pnp power transistors darlington transistor for audio power application NTE2345 NTE2346 darlington complementary 120v
Contextual Info: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT−82 type package designed for use in audio output stages and general amplifier and switching

audio Darlington 6A

Contextual Info: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching

NTE2344

Abstract: nte2343 SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE2343 NPN & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

NTE2560

Abstract: RBE 215 RELAY SILICON COMPLEMENTARY transistors darlington darlington complementary 120v NTE2559
Contextual Info: NTE2559 NPN & NTE2560 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Darlington 40A

Abstract: NTE2542 darlington complementary 120v NTE2541 SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE2541 NPN & NTE2542 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

marking 1F7

Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

TS16949

Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
Contextual Info: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where

Contextual Info: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where

NTE2349

Abstract: 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350
Contextual Info: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

300w power amplifier circuit diagram

Abstract: complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234
Contextual Info: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Contextual Info: T64 T65 MAGNA TEC MECHANICAL DATA Dimensions in mm 15.2 max SILICON DARLINGTON POWER TRANSISTORS 4.6 max 14 2.0 4.4 21.0 max 4.25 Dia. 4.15 12.7 max 1 2 3 Complementary epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching

2596

Abstract: BDS29A BDS29B BDS29C
Contextual Info: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)

Contextual Info: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)

npn C 1740

Contextual Info: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)

darlington complementary 120v

Abstract: FZT605 FZT604 FZT704 FZT705 dc1s VCES10
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching PARTMARKING DETAIL COMPLEMENTARY TYPES - E DEVICE TYPE IN FULL FZT604 - FZT704 FZT605 - FZT705

FZT605

Abstract: FZT604 FZT705
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT605 ISSUE 4 - MARCH 2001 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching E PARTMARKING DETAIL COMPLEMENTARY TYPES - FZT605 FZT705 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT605 ISSUE 4 - MARCH 2001 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching E PARTMARKING DETAIL COMPLEMENTARY TYPES - FZT605 FZT705 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching PARTMARKING DETAIL COMPLEMENTARY TYPES - E DEVICE TYPE IN FULL FZT604 - FZT704 FZT605 - FZT705

2SB1502

Abstract: 2SD2275
Contextual Info: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

OMA120

Abstract: FZT605 FZT604 FZT705 ARAA 14ge
Contextual Info: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705

2SB1502

Abstract: 2SD2275
Contextual Info: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage