DARLINGTON 40 A Search Results

MJ10023

Abstract: "Tektronix 475" tektronix 475 MJ10022 an222a
Contextual Info: MOTOROLA Order this document by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS

transistor BD 677

Abstract: BD 675 BD675 677d
Contextual Info: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

MJE1100

Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

Contextual Info: m 2N6285 \ \ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-3/TO-204AA U \ -J MAX. I MAXIMUM RATINGS 20 A 40 A PEAK

ULQ2003

Abstract: 2004a darlington dip 16 SO16 package AEC-Q100 ULQ2001 ULQ2001A ULQ2003A ULQ2004
Contextual Info: ULQ2001 ULQ2003 - ULQ2004 Seven Darlington array Features • Seven Darlington per package ■ Extended temperature range: -40 to 105 °C ■ Output current 500 mA per driver 600 mA peak ■ Output voltage 50 V ■ Automotive Grade product in SO16 package

Motorola AN222A

Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Contextual Info: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR

Contextual Info: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C

MMBT6427LT1

Abstract: MMBT6427LT1G
Contextual Info: MMBT6427LT1 Preferred Device Darlington Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 40 Vdc

MMBT6427LT1

Abstract: MMBT6427LT1G
Contextual Info: MMBT6427LT1 Preferred Device Darlington Transistor NPN Silicon Features • Pb−Free Package is Available MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage

transistor BD 680

Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
Contextual Info: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors

relay 04501

Abstract: D45D2 b0712 D45D1 D45D5 04501 relay 04503 8712 RESISTOR D45D D45D3
Contextual Info: VERY HIGH GAIN PNP POWER DARLINGTON TRANSISTORS D45D Series -40 - -80 VOLTS -6 AMP, 30 WATTS COMPLEMENTARY TO THE D44D SERIES The General Electric D45D isa Darlington power transistor. It is designed for general purpose switching of m ulti-ampere loads directly from low level logic circuitry. A monolithic bias

D44D1

Abstract: D44D2 D44D3 D44D5 D45D D44D
Contextual Info: VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS D44D Series 40-80 VOLTS 6 AMP, 30 WATTS COMPLEMENTARY TO THE D45D SERIES The General Electric D44D Is a Darlington power transistor. It is designed for general purpose switching of m ulti-ampere loads directly from low level logic circuitry. A monolithic bias

ESM2040DV

Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50

2N6427

Contextual Info: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc

2N6427

Abstract: 2N6426
Contextual Info: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc

NPN Transistor TO92 5V 200mA

Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
Contextual Info: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Sym b ol Value Unit C ollector-E m itter Voltage v CE O 40 Vdc C o llector-B ase Voltage VC BO 40 Vdc E m itter-B ase Voltage

KSH200

Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Contextual Info: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP

Contextual Info: 1162 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.2.5k

bc517

Abstract: transistor BC 157 BC517G BC517RL1 BC517RL1G BC517ZL1 BC517ZL1G BC517 model file
Contextual Info: BC517 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Collector −Emitter Voltage

transistor BC 157

Abstract: BC517 transistor bc 517
Contextual Info: BC517 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage

DIP18

Abstract: ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A
Contextual Info: ULQ2801A ULQ2802A - ULQ2803A ULQ2804A - ULQ2805A EIGHT DARLINGTON ARRAYS . . . . EIGHT DARLINGTONS PER PACKAGE EXTENDED TEMPERATURE RANGE – 40 to 105°C OUTPUT CURRENT TO 500mA OUTPUT VOLTAGE TO 50V INTEGRAL SUPPRESSION DIODES VERSIONS FOR ALL POPULAR LOGIC FAMILIES

MMBT6426

Abstract: MMBTA12 MMBTA13 MMBTA14
Contextual Info: This Surface Mount Transistors NATL Darlington Transistors— NPN VCEO V EBO V Min (V) Min MMBT6426 TO-236 (49) 40 40 MMBTA12 Its TO-236 (49) MMBTA13 MMBTA14 •c e s * ■CBO @ VCB @ hpE (j*A) Max (V) Min 12 0.05 30 20.000 30.000 20.000 20 10 0.1 15 TO-236