DARLINGTON 20A Search Results

pin diagram of ic 4066

Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Contextual Info: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

NPN Transistor 2N3055 darlington

Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

NTE251

Abstract: Darlington 40A
Contextual Info: NTE251 NPN & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.

QCA30B60

Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

darlington NPN 600V 12a transistor

Abstract: darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V MJ10023 NPN POWER DARLINGTON darlington NPN 600V
Contextual Info: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.

MJ10004

Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Contextual Info: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line

BOX53

Abstract: BOW83 NSOU45 PM016K40 BD875 6037Y MPS-U45 MPSU45 Motorola MPSU45 BSS50 SOT
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) Min NPN Darlington Transistors, (Cont'd) 5 10 MPSU45 MPSU45 2S01413 2S0687 2N6037 MJE3300 6037Y SOM3300 SOM3300 SOM3303 Solid Stine Motorola ToshlbaCorp ToshibaCorp

MJ1004

Abstract: MJ10004 MJ-10004
Contextual Info: 1165904 NPN silicon power darlington transistors with base-emitter speedup diode. The MJ1004 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall tim is critical. They are particularly suited for line operated

QCA100A60

Abstract: transistor 100A QBB100A40 QBB100A60 QCA100A40 IC-100A 6A620
Contextual Info: TRANSISTOR MODULE QCA100A/QBB100A40/60 UL;E76102 M QCA100A and QBB100A is a dual Darlington power transistor modules with two high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. QCA100A Series-connected type

vvvf motor

Abstract: 600v 100a servo motors QCA100AA100 QCA100AA120 dc motor control 100A 1000V 20A transistor E76102 transistor 2A
Contextual Info: TRANSISTOR MODULE QCA100AA100 UL;E76102 M QCA100AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

diode j3x

Abstract: D67DE5 D67DE 400-500 D67DE6 D67DE7 D67DE ZN442 k 518
Contextual Info: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS The General Electric D67DE is a high current power darlington. It features collector isolation from the heat sink, an internal construction designed for stress-free operation at temperature extremes, hefty screw terminals for emitter and

TERMINAL M4

Abstract: KS62121KHB TRANSISTOR L 287 A power transistor motor control kd62 powerex ks62
Contextual Info: m /m a x KS62121KHB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 High-Beta Single Darlington Transistor Module 1000 Amperes/1200 Volts Description: Powerex High-Beta Single Darlington Transistor Modules are designed for switching applica­

darlington NPN 600V 8a transistor

Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Contextual Info: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output

Darlington NPN 250W

Abstract: MJ10021
Contextual Info: MJ10021 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode Description: The MJ10021 is a Darlington transistor in a TO3 type package designed for high−voltage, high− speed, power switching in inductive circuits where fall time is critical. This device is particularly

150w darlington transistor to3 package

Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
Contextual Info: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

nte98

Contextual Info: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

Contextual Info: lONBSr KS62121KHB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl-B G t3 Single Darlington Transistor Module 1000 Amperes/1200 Volts Description: Powerex High-Beta Single Darlington Transistor Modules are designed for switching applica­

TR0011A

Abstract: Motorolla transistor replacement book 400mAdc
Contextual Info: PRELIMINARY SFT10000/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET APPLICATION NOTES: SFT10000 Darlington Transistor is direct replacement of Motorolla

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN DARLINGTON POWER TRANSISTOR BDX69 BDX69A BDX69B BDX69C MECHANICAL DATA Dimensions in mm 9.0 max. 26.6 max. 2.5 NPN Darlington transistors for audio

NPN Transistor 50A 400V

Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Contextual Info: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly

Contextual Info: T64 T65 MAGNA TEC MECHANICAL DATA Dimensions in mm 15.2 max SILICON DARLINGTON POWER TRANSISTORS 4.6 max 14 2.0 4.4 21.0 max 4.25 Dia. 4.15 12.7 max 1 2 3 Complementary epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching

Contextual Info: , Line. ^£.m.i-Conaa<2toi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PNP DARLINGTON POWER TRANSISTOR BDX68 BDX68A BDX68B BDX68C MECHANICAL DATA Dimensions in mm 26.6 max. j.O max 2.5 PNP Darlington transistors for audio