DALLAS 32PIN CMOS Search Results

IC-Socket

Abstract: 32k x 8 sram CMOS 28 DIP dallas 32 pin IC SOCKET 32-PIN DS1213B DS1213D
Contextual Info: DS1213D DS1213D SmartSocket 256K/1M FEATURES • Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data • Data retention time is greater than 10 years with the

Contextual Info: DS1213D DALLAS SEMICONDUCTOR DS1213D SmartSocket 256K/1M PIN ASSIGNMENT FEATURES * Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs 1 32 K 2 * Embedded lithium energy cell retains RAM data * Self-contained circuitry safeguards data 3 30 4 29 5 28 * Data retention time is greater than 10 years with the

d ram memory ic

Abstract: dallas 32 pin IC socket 32pin
Contextual Info: DALLAS DS1213D SmartSocket 256K/1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs 32 Vcc 31 • Embedded lithium energy cell retains RAM data 30 V cc 29 • Self-contained circuitry safeguards data

Contextual Info: DS1213D DALLAS SEMICONDUCTOR DS1213D SmartSocket 256K/1M FEATURES PIN ASSIGNMENT • Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data • Data retention time is greater than 10 years with the

ic 4013 cmos

Abstract: 16 pin DIP socket 32-PIN DS1213B DS1213D of 4013 ic IC CMOS 4013
Contextual Info: DS1213D SmartSocket 256k/1M !• DALLAS nr mmimmmmm www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years

1245Y

Contextual Info: DS 1245Y/A B DALLAS SEMICONDUCTOR FEATURES DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT I 1 A14 • Data is automatically protected during power loss I 1 1 32 1 2 3 31 • Unlimited write cycles • Low-power CMOS • Full ±10% Vqc operating range DS1245Y

Contextual Info: DS1613D DALLAS DS1613D SEMICONDUCTOR Partitioned SmartSocket 1M FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM Vcc A16 • Embedded lithium energy cell retains RAM data A15 A14 • Self-contained circuitry safeguards data WE A13 • Unconditionally write protects all of memory when

S1613D

Abstract: 1101 Static RAM
Contextual Info: D S1613D DALLAS SEMICONDUCTOR DS1613D Partitioned SmartSocket 1M FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM Vcc A15 A16 • Embedded lithium energy cell retains RAM data A14 • Self-contained circuitry safeguards data WE A13 • Unconditionally write protects all of memory when

Contextual Info: DS1213D SmartSocket 256k/1M www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection

4013 internal circuit

Abstract: DS1213D 32-PIN DS1213B
Contextual Info: DS1213D SmartSocket 256k/1M www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection

DS1613D

Abstract: transistor a13 transistor A16 32-PIN DS1613C 128K X 8 BIT CMOS SRAM
Contextual Info: DS1613D DS1613D Partitionable 1024K SmartSocket FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM • Embedded lithium energy cell retains RAM data • Unconditionally 1 32 VCC A16 2 31 A15 A14 3 30 write protects all of memory when VCC is out of tolerance

Contextual Info: DS1613D DALLAS SEMICONDUCTOR D S1613D Partitionable 1024K SmartSocket FEATURES PIN ASSIGNMENT • Accepts standard 128Kx 8, CMOS static RAM Vcc A15 A16 • Embedded lithium energy cell retains RAM data A14 • Unconditionally write protects all of memory when

Contextual Info: D S1216D DALLAS SEMICONDUCTOR SmartWatch/RAM 256K/1M FEATURES PIN ASSIGNMENT DS1216D • Converts standard 8K x 8, 32K x 8, 128K x 8, and 512K x 8 CMOS static RAMs into nonvolatile memory 1 •■■ 32 V CC • Embedded lithium energy cell maintains watch infor­

Contextual Info: DS1613D DALLAS DS1613D Partitioned SmartSocket 1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 128K x 8, CMOS static RAM | Vcc A16 31 1 A15 A14 301 NC | WE 28 1 A13 32 • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data

34-pin

Abstract: 32-PIN DS1250 DS1250AB DS1250Y
Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • Read and write access times as fast as 70 ns

interfacing 8051 with ds17887

Abstract: ds12b887 8051 DS12887 DS1215 equivalent DALLAS DS12B887 DS1307 IC with 8051 DS1213 equivalent ds1386-32-120 ds1386-8-150 DS1644-150
Contextual Info: TIMEKEEPING FAMILY OVERVIEW Aft DALLAS h W SEMICONDUCTOR DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 Tel: 214-450-0448 FAX: 214-450-3715 Literature & Technical Support: 214-450-0448 Sales & Customer Service: 214-450-0969 Automatic Data Sheet Faxback: 214-450-0441

ds1249ab70

Contextual Info: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

dallas 32 pin

Abstract: MEMORY IC 32-PIN
Contextual Info: DALLAS s e m ic o n d u c to r DS1216F SmartWatch/ROM 64K/256K/1M FEATURES PIN ASSIGNMENT • Adds timekeeping to any 32-pin JEDEC bytewide memory location RST 1 II 2 I 32 Vcc 31 I • Embedded lithium energy cell maintains calendar time for more than 10 years in the absence of power

DS1650Y

Abstract: 32-PIN DS1650 DS1650AB DS1650Y-100
Contextual Info: DS1650Y/AB DS1650Y/AB Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 • Low-power CMOS A3 9 24 OE • Read and write access times as fast as 70 ns

32-PIN

Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
Contextual Info: D S 1250Y /A B DALLAS DS1250Y/AB 4096K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc • Data is automatically protected during power loss A15 A17 • Directly replaces 512K x 8 volatile static RAM

bq4015

Abstract: bq4015Y
Contextual Info: bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integ ral co ntr ol c ir cuitry and li thium energy source provide

32-PIN

Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Contextual Info: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

32-PIN

Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Contextual Info: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns

32-PIN

Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Contextual Info: DS1249Y/AB 2048k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns