D882 Y Search Results

D882 TRANSISTOR

Abstract: transistor D882 datasheet D882 p TRANSISTOR D882 D882 D882 TRANSISTOR PIN D882 Q transistor "D882 p" d882 equivalent NPN TRANSISTOR D882
Contextual Info: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR D882 DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN CONFIGURATIONS PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25 PARAMETER SYMBOL Collector-Base Voltage

D882

Abstract: transistor D882 datasheet d882Y K D882 Y D882 SPECIFICATION D882-y D882 Y d882 equivalent datasheet d882 transistor d882
Contextual Info: SEMICONDUCTOR KTD882 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K D882 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D882 KTD882 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009

D882 TRANSISTOR

Abstract: D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 D882 to 92 D882 TO-92 d882 npn transistor transistor D882 datasheet D882 -TO-92
Contextual Info: D882 D882 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current ICM: 3 A Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: D882 YOUDA TRANSISTOR SI NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

D882 TRANSISTOR

Abstract: D882 TRANSISTOR D882 br d882 transistor D882 datasheet d882 npn transistor TRANSISTOR br D882 D882 datasheet d882 equivalent datasheet d882
Contextual Info: D882 0. 5 1¡ À 0 . 03 5¡ ã 5. 50¡ 0 À. 10 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 6. 5 0¡ À 0. 10 TO-251 TO-252-2 FEATURES 5¡ ã 5¡ ã 7. 70 0. 80¡ À 0. 0 5 0. 6 0¡ À 0. 0 5 1. Power dissipation 2. 3 0¡ À 0. 05 2. 3 0¡ À

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO

Contextual Info: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-251 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

TRANSISTOR D882

Abstract: D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TO-251 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

S11.11

Contextual Info: 3M 2126R Cushioned Static Shielding Wrap Properties Property Test Method Typical Value Thickness PPP-C 1842 125 mil ASTM D882 FTMS 101 34 lbs./in. width 22 lbs. Strength Tensile Puncture Surface Resistance/Resistivity Interior Exterior Metallized Layer

d882 to-92

Abstract: D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40

TRANSISTOR D882

Abstract: D882 PNP TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR PNP transistor D882 datasheet D882 D882 pnp D882 -TO-92 d882 equivalent D882 datasheet
Contextual Info: PNP TRANSISTOR D882 3.0A z z z AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage

D882 TRANSISTOR

Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

D882 TRANSISTOR

Abstract: TRANSISTOR br D882 D882 TRANSISTOR D882 br d882 d882 npn transistor NPN D882 transistor D882* transistor NPN TRANSISTOR D882 transistor Ic 1A NPN
Contextual Info: D882 Transistor NPN 1. BASE TO-252-2L 2. COLLECTOR 3 .EMITTER Features — Power dissipation Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage

D882 TRANSISTOR

Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

D882 TRANSISTOR

Abstract: d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 D882 TRANSISTOR NPN FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM : 1. EMITTER 1.25 W ( Tamb=25℃ ) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

D882 TRANSISTOR

Contextual Info: TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 Transistors SOT-89 TRANSISTOR（ NPN ） 1. BASE FEATURES Power dissipation PCM : 0.75 2. COLLECTOR 1 2 W（Tamb=25℃） 3. EMITTER 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

D882 TRANSISTOR

Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range

D882

Abstract: ASTM D2103 transistor D882 datasheet ASTM d882 D2103 ESD S11.11 ASTM D2103 - 10 e595 EIA-541 D882 d2103
Contextual Info: 3M 2100R/2110R Metal-Out Static Shielding Bag Properties Property Test Method Typical Value Thickness ASTM D2103 3.2 mil ASTM D882 FTMS 101 MIL B 81705 30 lbs./in. width >24 lbs. Pass ANSI PH2.19 40% Strength Tensile Puncture Seal Light Transmission Surface Resistance/Resistivity