D882 TRANSISTOR Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-251 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: D882 YOUDA TRANSISTOR SI NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

TRANSISTOR D882

Abstract: D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TO-251 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40

TRANSISTOR D882

Abstract: D882 PNP TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR PNP transistor D882 datasheet D882 D882 pnp D882 -TO-92 d882 equivalent D882 datasheet
Contextual Info: PNP TRANSISTOR D882 3.0A z z z AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage

D882 TRANSISTOR

Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

d882 to-92

Abstract: TRANSISTOR br D882 d882 y
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

D882 TRANSISTOR

Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

D882 TRANSISTOR

Abstract: d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 D882 TRANSISTOR NPN FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM : 1. EMITTER 1.25 W ( Tamb=25℃ ) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

D882 TRANSISTOR

Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range

D882

Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR（NPN） TO—251 FEATURES 1.BASE Power dissipation PCM : 1.25W（Tamb=25℃） Collector current ICM: 3A Collector-base voltage V BR CBO : 40V Operating and storage junction temperature range

d882 051

Abstract: D882 br d882 D882 SPECIFICATION d882 npn 2D882 transistor D882 datasheet D882 P transistor d882 Plastic Encapsulate Transistors
Contextual Info: D882 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 3.2±0.2 8.0±0.2 2.0±0.2 4.14±0.1 Features O2.8±0.1 11.0±0.2 O3.2±0.1 1.4±0.1 1 2 3 MAXIMUM RATINGS* TA=25 C unless otherwise noted

TRANSISTOR D882 input

Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet
Contextual Info: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25

D882

Abstract: D882 TRANSISTOR transistor D882 datasheet NPN D882 transistor TRANSISTOR D882 br d882 D882 -TO-92 datasheet d882 252 d882 TRANSISTOR br D882
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 6. 5 0¡ À 0. 10 0. 5 1¡ À 0 . 03 5¡ ã À. 10 5. 50¡ 0 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 TO-251 TO-252-2 5¡ ã FEATURES 5¡ ã

N E C D882

Abstract: br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882
Contextual Info: M C C TO-126 P lastic-E n cap su late T r a n s is t o r s ^ D882 TRANSISTOR NPN FE A T UR E S Pow er d issip ation TO-126 Pcm : 1.25W (Tamb=25“C ) Collector current 1.E M I T T E R lew: 3 A 2.C O L L E C T O R Collector-base voltage V(BR)CBO; 40 V 3.B A S E

BD882-R

Abstract: K D882 Y sot 89 D882 D882 sot89 BD882-GR marking d882 sot-89 d882
Contextual Info: MCC TM Micro Commercial Components BD882-R BD882-O BD882-Y BD882-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Silicon NPN epitaxial planer Transistors Power dissipation

Contextual Info: WTM772 WTM882 PNP/NPN Epitaxial Planar Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER WTM772 2 3 WTM882 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Symbol VCEO

sot 89 D882

Abstract: marking d882 sot-89 d882 BD882-R BD882 br d882
Contextual Info: MCC TM Micro Commercial Components BD882-R BD882-O BD882-Y BD882-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

br d882 p

Abstract: D882 TRANSISTOR TRANSISTOR D882 input D882 P transistor "D882 p" N E C D882 transistor D882 K D882 Y BR D882 S D882 q
Contextual Info: TO-126 Plastic-Encapsulate Transistors^ D 8 8 2 T R A N S IS T O R N P N FEATURES Power dissipation TO-126 1.25W (Tamb=25°C) Pcm : C o llecto r current 1.EMITTER Icm: ¿.COLLECTOR 3 A C ollector-base voltage 3 .BASE V(BR)CBO; 40 V O perating and storage ju n ctio n tem perature range