D882 P Search Results

D882

Abstract: transistor D882 datasheet d882Y K D882 Y D882 SPECIFICATION D882-y D882 Y d882 equivalent datasheet d882 transistor d882
Contextual Info: SEMICONDUCTOR KTD882 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K D882 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D882 KTD882 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-251 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: D882 YOUDA TRANSISTOR SI NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

TRANSISTOR D882

Abstract: D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TO-251 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

S11.11

Contextual Info: 3M 2126R Cushioned Static Shielding Wrap Properties Property Test Method Typical Value Thickness PPP-C 1842 125 mil ASTM D882 FTMS 101 34 lbs./in. width 22 lbs. Strength Tensile Puncture Surface Resistance/Resistivity Interior Exterior Metallized Layer

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40

TRANSISTOR D882

Abstract: D882 PNP TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR PNP transistor D882 datasheet D882 D882 pnp D882 -TO-92 d882 equivalent D882 datasheet
Contextual Info: PNP TRANSISTOR D882 3.0A z z z AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage

D882 TRANSISTOR

Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

d882 to-92

Abstract: TRANSISTOR br D882 d882 y
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

D882 TRANSISTOR

Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

D882 TRANSISTOR

Abstract: d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 D882 TRANSISTOR NPN FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage

Contextual Info: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 Transistors SOT-89 TRANSISTOR（ NPN ） 1. BASE FEATURES Power dissipation PCM : 0.75 2. COLLECTOR 1 2 W（Tamb=25℃） 3. EMITTER 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

D882 TRANSISTOR

Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range

D882

Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR（NPN） TO—251 FEATURES 1.BASE Power dissipation PCM : 1.25W（Tamb=25℃） Collector current ICM: 3A Collector-base voltage V BR CBO : 40V Operating and storage junction temperature range

Contextual Info: 3M Film, Bag and Tubing Properties* Property Thickness  Strength Breaking Factor Puncture  Test Method Typical Value ASTM D2103 4 mil 102 microns ASTM D882 Fed Std 101 10 lbs./in. 8 lbs.   Heat Seal Parameters Temperature Time Pressure 180°F - 25 0°F

d882 051

Abstract: D882 br d882 D882 SPECIFICATION d882 npn 2D882 transistor D882 datasheet D882 P transistor d882 Plastic Encapsulate Transistors
Contextual Info: D882 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 3.2±0.2 8.0±0.2 2.0±0.2 4.14±0.1 Features O2.8±0.1 11.0±0.2 O3.2±0.1 1.4±0.1 1 2 3 MAXIMUM RATINGS* TA=25 C unless otherwise noted

d882 equivalent

Abstract: md1724 md8820 D882 to 92 V32B intel microsoft ip dslam IS-101 voice CTR-21 D882
Contextual Info: I ntel M D882 XADSL G .Lite a nd V.90 M odem Chips et Overview The Intel® MD882X modem chipset delivers simultaneous G.Lite and V.90 operation. Dual functionality gives the user the ability to fully utilize their ADSL G.Lite connection while concurrently sending or receiving V.90 data,

TRANSISTOR D882 input

Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet
Contextual Info: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25

D882

Abstract: D882 TRANSISTOR transistor D882 datasheet NPN D882 transistor TRANSISTOR D882 br d882 D882 -TO-92 datasheet d882 252 d882 TRANSISTOR br D882
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 6. 5 0¡ À 0. 10 0. 5 1¡ À 0 . 03 5¡ ã À. 10 5. 50¡ 0 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 TO-251 TO-252-2 5¡ ã FEATURES 5¡ ã

N E C D882

Abstract: br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882
Contextual Info: M C C TO-126 P lastic-E n cap su late T r a n s is t o r s ^ D882 TRANSISTOR NPN FE A T UR E S Pow er d issip ation TO-126 Pcm : 1.25W (Tamb=25“C ) Collector current 1.E M I T T E R lew: 3 A 2.C O L L E C T O R Collector-base voltage V(BR)CBO; 40 V 3.B A S E