D6 TYPE DIODE Search Results

D6 type diode

Abstract: a2s130 diode d6 diode 1600 rectifier D6 DIODE DATASHEET Usha Rectifier diode
Contextual Info: Rectifier Diode D6 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Free-wheeling diodes. Type No. D6/02 D6/04 D6/08 D6/12 D6/16 VRRM Volts 200 400 800 1200 1600 Symbol I F(AV)

D6 type diode

Abstract: D626 D635 ixys mdd D617 d632 72 diode D620 diode mdd 310 MDO 26
Contextual Info: Rectifier Diode Modules Contents Package style V rrm/V oRm V Type Page MDO 26 D6-2 MDD 44 D6-5 S Diode Modules 1999 IXYS All rights reserved MDD 56 D6-8 MDD 72 D6-11 MDD 95 D6-14 MDD 142 D6-17 MDD 172 D6-20 MDD 220 D6-23 MDD 250 D6-26 MDD 255 D6-29 MDD 310

MDD 500-22N1

Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●

Contextual Info: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance

Leistungsdiode

Abstract: Diodes de redressement
Contextual Info: Kleine Leistungsdioden Low power diodes Diodes de faible puissance Gleichrichterdioden Typ Rectifier diodes Type Vrrm I fa v m Ifs m V Outline Dimension A 160 O J ÎI *1200 D6 / ‘v Typ 1400 ' a ï i i f e . i r . If s m tA = 4 5 °C V A •• < 1600

74AC

Abstract: TC74VHCT573A TC74VHCT573AF TC74VHCT573AFT TC74VHCT573AFW
Contextual Info: TOSHIBA TC74VHCT573AF/AFW/AFT TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74VHCT573AF, TC74VHCT573AFW, TC74VHCT573AFT OCTAL D-TYPE LATCH WITH 3 - STATE OUTPUT TRUTH TABLE [ [ C [ [ [ [ [ [ [ < OE 1 DO 2 D1 3 D2 4 D3 5 D4 6 D5 7 D6 8

SMD TRANSISTOR L6

Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Contextual Info: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155

brake rectifier motor

Abstract: dc chopper circuit ANS5 diode x18
Contextual Info: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V A4 D D1 1200 1600 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D3 D5 N7 T D2 D4 D6 X18 L9

brake rectifier motor

Abstract: DIODE N7
Contextual Info: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V VUB 50 A4 D D1 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D5 N7 T D2 D4 D6 X18 L9 R9 Features

ZR500

Abstract: zr2000 ZR12
Contextual Info: Power S em icon du ctor Devices Soft Recovery Diodes—Disc Type Ip AV Model V rrm @Tc=1051C A IpSM V fm @50HZ V ta ­ Qrr Rtlyc Ty) it • PC V/W V 0.080 150 D6 0.040 150 D7 0.030 150 D9 0.021 150 D ll Outline @IpM kA V A ZR200/18 200 1800 2.5 2.0 600 1.0

Power Diodes

Contextual Info: Low power diodes Rectifier diodes Type O utline I favm trr tv, max A A US °C 400 800 160 3 - 150 112 400 • 800 1200 1400 1600 100 6 150 114 I favm tv j max O utline A °c If s m V rrm î = 10 ms tv] = tv j max V D 3 / ■ Controlled avalanche diodes D6/

D3S 50

Abstract: OA61 AEG Diode
Contextual Info: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal

diode ZENER C2 smd

Abstract: capacitor 100nF capacitor 100nf 50v Diode zener smd d4 SMD ZENER DIODE d7 smd L2 diode 805 smd resistor SMD ZENER DIODE d4 Zener diode 18V SOD80 smd 1a 400v diode
Contextual Info: STMicroelectronics: STEVAL-ISA005V1 QTY Reference 1 CON1 1 2 1 1 1 2 2 1 2 1 1 1 1 1 1 2 1 1 CON2 C1, C2 C3 C4 C6 C7, C8 D1, D2 D3 D4, D5 D6 D7 L1 L2 R1 R3 R5, R6 U1 U2 May-07 Part Description Mfg P/n Clamp, 2 pole, horizontal, type 94, 380V 15A connector

ups D6-11

Abstract: MKI 50-06 A7 A7t diode 20 mki 5
Contextual Info: MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type 13 NTC - Option MKI 50-06 A7 MKI 50-06 A7T T1 T5 D1 D5 9 1 without NTC with NTC T 10 2 16 T2 14 T6 D2 D6 11 T 3 12

KDP620UL

Contextual Info: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B ・Array type 6 Diode in one package ・Low Capacitance ・Low Series resistance 12 DIM A B C D E F G MAXIMUM RATING (Ta=25℃)

diode D5 marking

Abstract: KDP622UL marking d6 MARKING D6 diode IR 106 D1 D6 type diode
Contextual Info: SEMICONDUCTOR KDP622UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage

KDP620UL

Contextual Info: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage

d3 marking

Contextual Info: SEMICONDUCTOR KDP622UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 1 6 B E ・Array type 6 Diode in one package ・Low Capacitance ・Low Series resistance 12 DIM A B C D E F G MAXIMUM RATING (Ta=25℃)

Contextual Info: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage

marking d4

Contextual Info: SEMICONDUCTOR KDP630UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. TENTATIVE FEATURES ・Array type 6 Diode in one package ・Low Capacitance A ・Low Series resistance D 6 B E 1 12 TOP VIEW C 7 BOTTOM VIEW

CA25-12GWA

Contextual Info: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CA25-12GWA GREEN Features Description z0.25 INCH DIGIT HEIGHT The Green source color devices are made with Gallium zLOW CURRENT OPERATION. Phosphide Green Light Emitting Diode. zEXCELLENT CHARACTER APPEARANCE.

CC25-12GWA

Abstract: 140D7
Contextual Info: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CC25-12GWA GREEN Features Description z0.25 INCH DIGIT HEIGHT The Green source color devices are made with Gallium zLOW CURRENT OPERATION. Phosphide Green Light Emitting Diode. zEXCELLENT CHARACTER APPEARANCE.

Contextual Info: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CA25-12CGKWA Green Description Features 0.25 inch digit height The Green source color devices are made with AlGaInP on Low current operation. GaAs substrate Light Emitting Diode. Excellent character appearance.

Contextual Info: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CC25-12CGKWA Green Description Features 0.25 inch digit height The Green source color devices are made with AlGaInP on Low current operation. GaAs substrate Light Emitting Diode. Excellent character appearance.