D6 DIODE Search Results

D6 type diode

Abstract: a2s130 diode d6 diode 1600 rectifier D6 DIODE DATASHEET Usha Rectifier diode
Contextual Info: Rectifier Diode D6 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Free-wheeling diodes. Type No. D6/02 D6/04 D6/08 D6/12 D6/16 VRRM Volts 200 400 800 1200 1600 Symbol I F(AV)

sanken power transistor

Abstract: for rectifier
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D6 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters

d667

Contextual Info: VUB 72 VRRM = 1200/1600 V IdAVM = 110 A Three Phase Rectifier Bridge with Brake Chopper Preliminary Data 1 2 D1 D3 D5 D2 D4 D6 NTC 4 5 D T 6 7 Features Input Rectifier D1 - D6 Symbol Conditions VRRM VUB 72 -12 NO1 VUB 72 -16 NO1 Maximum Ratings IFAV IDAVM

brake rectifier motor

Abstract: vub 70 diode B25 VUB72 dc chopper circuit DIODE RECTIFIER BRIDGE SINGLE E72873 B25 diode Three Phase Rectifier Bridge with Brake IGBT vub 70 -16
Contextual Info: VUB 72 VRRM = 1200/1600 V IdAVM = 110 A Three Phase Rectifier Bridge with Brake Chopper 1 2 D1 D3 D5 D2 D4 D6 NTC 4 5 D T 6 7 Features Input Rectifier D1 - D6 Symbol Conditions VRRM VUB 72 -12 NO1 VUB 72 -16 NO1 Maximum Ratings IFAV IDAVM IFSM 1200 1600 V

Contextual Info: VUB 72 VRRM = 1200/1600 V IdAVM = 110 A Three Phase Rectifier Bridge with Brake Chopper 1 2 D1 D3 D5 D2 D4 D6 NTC 4 5 D T 6 7 Features Input Rectifier D1 - D6 Symbol Conditions VRRM VUB 72 -12 NO1 VUB 72 -16 NO1 Maximum Ratings IFAV IDAVM IFSM 1200 1600 V

Contextual Info: VUB 72 VRRM = 1200/1600 V IdAVM = 110 A Three Phase Rectifier Bridge with Brake Chopper 11 12 1 2 D1 D3 D NTC D5 4 5 11 12 T D2 D4 D6 6 7 Features Input Rectifier D1 - D6 Conditions Maximum Ratings VRRM VUB 72 -12 NO1 VUB 72 -16 NO1 IFAV IDAVM IFSM V V TC = 80°C; sine 180°

APT0502

Abstract: APTM20TDUM16PG 104-A diode s4 53
Contextual Info: APTM20TDUM16PG Triple dual common source MOSFET Power Module D3 G3 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 D5 G3 S3/S4 S3 G5 S5/S6 S5 S2 S4 S6 G2 G4 G6 D4 D6 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

5010L

Abstract: 5002L MR5000L MR5010L
Contextual Info: MR5000L - MR5010L AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 50 Amperes D6 * * * * * 1.00 25.4 MIN. 0.360 (9.1) 0.340 (8.6) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148A:5H MMBD4148CA :D6

MR760

Abstract: MR750
Contextual Info: MR750 - MR760 AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 22 Amperes D6 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4 MIN. 0.360 (9.1)

P800A

Abstract: P800 P800B P800D P800G P800J P800K
Contextual Info: P800A - P800K SILICON RECTIFIER DIODES PRV : 50 - 800 Volts Io : 8.0 Amperes D6 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4 MIN. 0.360 (9.1)

F1200D

Abstract: F1200A
Contextual Info: Certificate TH97/10561QM F1200A, F1200D FAST RECOVERY RECTIFIER DIODES PRV : 50 - 200 Volts Io : 12 Amperes D6 FEATURES : * * * * * * * Certificate TW00/17276EM High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SOT-23 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148A:5H MMBD4148CA :D6

P800A

Abstract: P800B P800D P800G P800J P800K
Contextual Info: P800A - P800K SILICON RECTIFIER DIODES PRV : 50 - 800 Volts Io : 8.0 Amperes D6 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4 MIN. 0.360 (9.1)

HER601

Abstract: HER608
Contextual Info: HER601 - HER608 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 6.0 Amperes D6 FEATURES : * * * * * * High surge current capability Low leakage current Forward voltage drop Low power loss High efficiency Pb / RoHS Free 1.00 25.4 MIN. 0.360 (9.1)

Contextual Info: D6 9 -9 7 J553, J554, J555, J556, J557 CURRENT REGULATOR DIODE • CURRENT REGULATION • CURRENT LIMITING • BIASING Absolute maximum ratings at TA = 25'C. Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation 50 V 50 mA

Contextual Info: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance

2478 diode

Contextual Info: TH97/2478 10A07E TH09/2479 IATF 0060636 SGS TH07/1033 SILICON RECTIFIER DIODE D6 PRV : 1000 Volts Io : 10 Amperes 1.00 25.4 MIN. 0.360 (9.1) 0.340 (8.6) FEATURES : * Diffused Junction * High current capability and Low Forward Voltage Drop * Surge Overload Rating to 600A Peak

BZW50

Abstract: BZW50 Series 47B diode BZW50-10 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33
Contextual Info: BZW50 Series TRANSIENT VOLTAGE SUPPRESSOR Stand-off Zener Voltage: 10 - 180 Volts Peak Power: 5000 Watts D6 FEATURES : * 5000W 10/1000µs Peak Pulse Power * Excellent clamping capability * Low incremental surge resistance * Fast response time : typically less

Contextual Info: Product catalogue | Terminals | Cutting and clamping technology | Modular terminals with electronic components General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 1820070000 IDK 1.5N/D6 Component terminal, 1.5 mm², Insulation

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

YG339D6

Abstract: D65A 60 w 600v .5A YG339C6
Contextual Info: YG339C6,N6,D6 5A (600V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

D65A

Abstract: yg339c6 YG339D6
Contextual Info: YG339C6,N6,D6 5A (600V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2