D5 MARKING Search Results

Contextual Info: SO D5 23 PESD5V0X1UAB Ultra low capacitance unidirectional ESD protection diode Rev. 1 — 15 February 2011 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge ESD protection diode in a

STM5-1-2008

Contextual Info: SO D5 23 PESD5V0X1UB Ultra low capacitance unidirectional ESD protection diode Rev. 1 — 15 February 2011 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge ESD protection diode in a

4M9071

Abstract: Marking code j58
Contextual Info: TQP4M9071 High Linearity 6-Bit, 31.5dB Digital Step Attenuator Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipments and Sensors IF and RF Applications General Purpose Wireless 24-pin 4x4mm leadless QFN package D4 D3 D2 D5 19 20 21 D1

TQP4M9071

Contextual Info: TQP4M9071 High Linearity 6-Bit, 31.5 dB Digital Step Attenuator Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipments and Sensors IF and RF Applications General Purpose Wireless 24-pin 4x4mm leadless QFN package D3 D4 D5 23 22 21 20

MIXA61H1200ED

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

VUB72-12NOXT

Abstract: VUB72-16NOXT ixys vub 70 215 dc brake rectifier motor VUB72-12 vub 70 -16
Contextual Info: VUB 72-12/16NOXT Three Phase Rectifier Bridge VRRM = 1200/1600 V IdAVM = 110 A with Brake Chopper Part name Marking on product VUB72-12NOXT VUB72-16NOXT 6 11 D1 D3 D5 12 10 1 NTC 4 2 D 11 5 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 Features: Application: Package:

Contextual Info: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4

G4EU

Abstract: E72873 MIXA20W1200TMH
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV

Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage

Contextual Info: SN65LVDS95ĆQ1 LVDS SERDES TRANSMITTER SGLS207A − OCTOBER 2003 − REVISED MAY 2008 DGG PACKAGE TOP VIEW D Qualified for Automotive Applications D 21:3 Data Channel Compression at up to 1.36 Gigabits per Second Throughput D4 VCC D5 D6 GND D7 D8 VCC D9

MIEB100W1200TEH

Abstract: airconditioning inverter circuit 29-D2
Contextual Info: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin configuration see outlines. 20 D2

Contextual Info: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 5 1 19 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin coniguration see outlines. D2 20

CQ31

Abstract: 470nF TQFP48 TSA1201 TSA1204 TSA1204IF TSA1204IFT 093LSB
Contextual Info: TSA1204 DUAL-CHANNEL, 12-BIT, 20MSPS, 120mW A/D CONVERTER • 0.5Msps to 20Msps sampling frequency ■ Adaptive power consumption: 120mW @ PIN CONNECTIONS top view D1 D0(LSB) VCCBE GNDBE VCCBI VCCBI OEB AVCC AVCC 34 D4 INIB 4 33 D5 AGND 5 32 D6 IPOL 6 31 D7

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

MIEB101W1200EH

Abstract: 101W1200EH
Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology

Contextual Info: MWI75-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 110 A VCE sat = 1.7 V Part name (Marking on product) MWI75-12T8T 16, 17, 18 30, 31, 32 D1 D3 T1 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 T5 5 1 19 3 D5 T3 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.

Contextual Info: MIXA100W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 1 19 T5 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 3 D5 T3 5 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

M99A

Abstract: DMA90U1800LB
Contextual Info: DMA 90U1800LB Three Phase Rectifier Bridge VRRM = 1800 V Id AV M = 99 A IFSM = 320 A ISOPLUS Surface Mount Power Device DC+ L1 L2 L3 D1 D2 D3 L1 L2 L3 E72873 D4 D5 D6 DC+ DC- DC- Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 1800 V 38

A102

Abstract: APM4220 APM4220KA
Contextual Info: APM4220KA N-Channel Enhancement Mode MOSFET Features • Pin Description D8 D7 D6 D5 25V/16A, RDS ON =7.5mΩ(typ.) @ VGS=10V • • • • S1 S2 S3 G4 RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated SOP−8 Exposed Reliable and Rugged

CQ13

Abstract: CQ31 TQFP48 TSA1201 TSA1204 TSA1204IF TSA1204IFT
Contextual Info: TSA1204 DUAL-CHANNEL, 12-BIT, 20MSPS, 120mW A/D CONVERTER • 0.5Msps to 20Msps sampling frequency ■ Adaptative power consumption: 120mW @ CKD VCCBI GNDBE D1 OEB VCCBE AVCC D0 LSB AVCC 38 37 D2 D3 AGND 3 34 D4 INBI 4 33 D5 AGND 5 32 D6 IPOL 6 31 D7 30 D8

Contextual Info: TSA1204 Dual channel 12-bit 20Msps 120mW A/D converter Features • 0.5 Msps to 20 Msps sampling frequency ■ Adaptive power consumption: 120 mW @ 20 Msps, 95 mW@10 Msps Multiplexed outputs ■ INIB 4 33 D5 AGND 5 32 D6 IPOL 6 31 D7 TSA1204 30 D8 29 D9 AGND 8

101W1200EH

Abstract: D434
Contextual Info: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

ntc 2,0

Abstract: MIXA80W1200TEH marking code DIODE d6 pcb diagram welding inverter E72873 ntc 7.0 0037 IC405
Contextual Info: MIXA80W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 120 A VCE sat = 1.8 V Part name (Marking on product) MIXA80W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.