D3 MARKING CODE Search Results

Contextual Info: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ Device Marking D1 D2 D3 TA = 25°C unless otherwise noted

MELF 0207

Abstract: MARKING EU RD41 MELF-0207 MARKING D1 MELF dimensions
Contextual Info: RESISTORS CARBON FILM RD41 ① D3 RESISTORS MELF TYPE ② ③ ④ STRUCTURE C Protective coating Trimming cut Ceramic core Cap iron solder plated Carbon film Marking D1 ⑤ ⑥ 1 2 3 4 5 6 L L D2 IDENTIFICATION COATING COLOR MARKING RD41 Ivory Color bands

Marking Code D3

Abstract: DIODE marking code D3 mmbd142
Contextual Info: MMBD142W SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications • for switching circuits 1 Absolute Maximum Ratings Ta = 25 OC Parameter 2 Marking Code: D3 Symbol Value Unit Peak Reverse Voltage VRM 80 V Reverse Voltage VR 80 V Forward Current IF 100

Contextual Info: fixed carbon film melf resistor features • • • • Suitable for reflow and wave soldering Metal plate terminals Meets or exceeds EIAJ-8009, EIA-PDP-100 Marking: Ivory body color with three color-coded bands dimensions and construction L D3 C Type D1 D2

RD412B

Contextual Info: fixed carbon film melf resistor features • • • • Suitable for reflow and wave soldering Metal plate terminals Meets or exceeds EIAJ-8009, EIA-PDP-100 Marking: Ivory body color with three color-coded bands dimensions and construction L D3 C Type D1 D2

sot-23 DIODE marking code D3

Abstract: Marking Code D3 1SS187 DIODE marking code D3 sot-23 marking code
Contextual Info: 1SS187 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: D3 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings Ta = 25 OC

301 marking code PNP transistor

Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
Contextual Info: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP

G4EU

Abstract: E72873 MIXA20W1200TMH
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV

Contextual Info: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 D1 1 T1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: + • SPT IGBT technology • low saturation voltage

VUB72-12NOXT

Abstract: VUB72-16NOXT ixys vub 70 215 dc brake rectifier motor VUB72-12 vub 70 -16
Contextual Info: VUB 72-12/16NOXT Three Phase Rectifier Bridge VRRM = 1200/1600 V IdAVM = 110 A with Brake Chopper Part name Marking on product VUB72-12NOXT VUB72-16NOXT 6 11 D1 D3 D5 12 10 1 NTC 4 2 D 11 5 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 Features: Application: Package:

MIEB100W1200TEH

Abstract: airconditioning inverter circuit 29-D2
Contextual Info: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin configuration see outlines. 20 D2

Contextual Info: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 5 1 19 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin coniguration see outlines. D2 20

Contextual Info: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 1 T1 D1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: Application: Package: • SPT IGBT technology • low saturation voltage

Contextual Info: VUI 30-12 N1 Rectifier Module for Three Phase Power Factor Correction Typ. Rectified Mains Power Pn = 15 kW at Vn = 400 V 3~ fT = 15 kHz TC = 80°C Preliminary data Part name Marking on product VUI30-12N1 2 D3 D1 10 9 5 5 1 2 T 6 6 9 10 D2 D4 1 Features:

Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:

G4EU

Abstract: ic MARKING QG E72873 DIODE T6 marking
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:

VUI72-16NOXT

Abstract: vui72-16 VUI72 215 dc brake rectifier motor VUI72-1 72-16NOXT vui three phase bridge ixys vui72-16no 9V bridge rectifier ic VUI72-16N
Contextual Info: VUI 72-16NOXT Three Phase Rectifier Bridge VRRM = 1600 V IdAVM = 110 A with Brake IGBT Part name Marking on product VUI72-16NOXT 6 11 D1 12 5 1 ˙NTC D3 D5 4 2 11 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 E72873 10 Features: Application: Package: • Three phase mains rectifier

MIEB101W1200EH

Abstract: 101W1200EH
Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology

Contextual Info: MWI75-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 110 A VCE sat = 1.7 V Part name (Marking on product) MWI75-12T8T 16, 17, 18 30, 31, 32 D1 D3 T1 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 T5 5 1 19 3 D5 T3 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.

Contextual Info: MIXA100W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 1 19 T5 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 3 D5 T3 5 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.

D6 TRANSISTOR MARKING

Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: + • SPT IGBT technology • low saturation voltage

Contextual Info: MWI 75-12T7T IC25 = 110 A VCES = 1200 V VCE sat typ. = 1.7 V Six-Pack Trench IGBT Part name (Marking on product) MWI 75-12T7T 15, 16 25, 26 D1 T1 17 D3 1 5 2 6 T3 D5 9 T5 10 23, 24 21, 22 19, 20 NTC E72873 Pin coniguration see outlines. D2 18 3 D4 T2 4 D6

Contextual Info: MIEB 100W1200DPFTEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 170 A VCE sat typ. = 1.9 V Preliminary data Part name (Marking on product) MIEB100W1200DPFTEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4

Contextual Info: MIXA80W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 120 A VCE sat = 1.8 V Part name (Marking on product) MIXA80W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 1 19 T5 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 3 D5 T3 5 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.