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    D2S2 DIODE Search Results

    D2S2 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    D2S2 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    compensator for cuk converter

    Abstract: CC0N3 isolated sepic converter D3S3 diode d2s2 diode CC0N2 dc1s sepic LM3478 LM3478 SEPIC
    Contextual Info: National Semiconductor Application Note 1990 L.K.Wong and T.K.Man January 19, 2010 Introduction time and the switching period TSW of the switch S1. Its nominal value is SEPIC converters have a number of advantages. They allow an input voltage higher or lower than the output voltage. The


    Original     		lm3478an-1990compensator for cuk convertercc0n3+7isolated sepic converterd3s3 dioded2s2 diodecc0n2dc1ssepiclm3478 sepic PDF

    si1869

    Abstract: Si1869DH SC70-6 D23XX
    Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V rDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 1.8 to 20 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 • TrenchFET Power MOSFETS: 1.8 V Rated • ESD Protected: 2000 V On Input Switch,


    Original     		si1869dhsc70-608-apr-05si1869+1d23xx PDF

    si1869dh-t1-ge3

    Abstract: Si1869DH-T1-E3 si1869 620td SC70-6 SI1869DH
    Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a


    Original     		si1869dhsc70-66124lectual18-jul-08+4si1869dh-t1-ge3si1869dh-t1-e3si1869620td PDF

    Si1869DH

    Abstract: SC70-6
    Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V rDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 1.8 to 20 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 • TrenchFET Power MOSFETS: 1.8 V Rated • ESD Protected: 2000 V On Input Switch,


    Original     		si1869dhsc70-618-jul-08 PDF

    Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a


    Original     		si1869dhsc70-618-jul-08 PDF

    Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a


    Original     		si1869dhsc70-62002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    BT8370KPF

    Abstract: BT8370 Bt8370EVM MC68302 user
    Contextual Info: Fully I n t e g r a t e d T l / E l F r a me r and Line I n t e r f a c e R O C K S00266 N8370DSE July 1 ,1 9 9 9 C O N E X A N T What's next in communications technologies C O M C X A N T B t8 3 7 0 /8 3 7 5 /8 3 7 6 Fully Integrated T l/E l Framer and Line Interface


    OCR Scan     		s00266n8370dsebt8370/8375/8376bt8370+5bt8375bt8376bt8370kpfbt8370evmmc68302 user PDF