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    D2118 TRANSISTOR Search Results

    D2118 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    D2118 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor d2118

    Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3


    OCR Scan     		2SD2118F5 SC-63) D2118 transistor d2118 PDF

    transistor d2118

    Abstract: D2118 D2118 transistor
    Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for


    OCR Scan     		2SD2118F5 SC-63) D2118- 2SD2118F5 transistor d2118 D2118 D2118 transistor PDF

    D2118

    Abstract: transistor d2118 BTB1412J3 d2118 transistor Pw380us BTD2118J3 D21-1-8
    Contextual Info: Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118J3 Features • Low VCE sat , VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics


    Original     		C847J3 BTD2118J3 BTB1412J3 O-252 UL94V-0 D2118 transistor d2118 BTB1412J3 d2118 transistor Pw380us BTD2118J3 D21-1-8 PDF