D2 SMD Search Results

Contextual Info: Formosa MS SGFM161C-D2 THRU SGFM168C-D2 SMD Super Fast Rectifiers List List. 1 Package outline. 2

Contextual Info: Formosa MS SGFM101C-D2 THRU SGFM108C-D2 SMD Super Fast Rectifiers List List. 1 Package outline. 2

Contextual Info: SMD Super Fast Rectifiers Formosa MS SGFM101C-D2 THRU SGFM108C-D2 List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Schottky Barrier Rectifier SKFM1620C-D2 THRU SKFM16200C-D2 List List. 1 Package outline. 2

Contextual Info: SMD Super Fast Rectifiers Formosa MS SGFM161C-D2 THRU SGFM168C-D2 List List. 1 Package outline. 2

Contextual Info: SMD Schottky Barrier Rectifier Formosa MS SKFM1620C-D2 THRU SKFM16200C-D2 List List. 1 Package outline. 2

9926b

Contextual Info: MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY • Features SOP-8 ● RDS on = 0.027 Ω @ VGS = 4.5 V ● RDS(on) = 0.036 Ω @ VGS = 2.5 V. D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G2 G1 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol

smd diode S2

Abstract: S16G1 POWER MOSFET Rise Time 1 ns 1A smd mosfet equivalent smd mosfet KI8205T 8v smd mosfet DIODE S2 mosfet smd mpf164
Contextual Info: MOSFET SMD Type Dual N-Channel High Density Trench MOSFET KI8205T Unit: mm Features Super high dense cell trench design for low RDS on . Rugged and reliable. Surface Mount package. 1 pin mark D1 D2 G1 S1 1 6 G1 D1/D2 2 5 D1/D2 S2 3 4 G2 G2 S1 S2 Absolute Maximum Ratings Ta = 25

Contextual Info: MOSFET SMD Type Dual N-Channel MOSFET SI9926DY • Features SOP-8 ● RDS on ≤ 0.032 Ω @ VGS = 4.5 V ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 G1 D2 G2 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter

Contextual Info: MOSFET SMD Type Dual N-Channel MOSFET KI9926A • Features SOP-8 ● RDS on = 0.030 Ω @ VGS = 4.5 V ● RDS(on) = 0.040 Ω @ VGS = 2.5 V. D1 D2 G1 G2 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 Top View ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating

5962-8952001YA

Abstract: OM71585 5962-8864601XA 5962-8952101YA 5962-8864601UA 5962-8998101YA OM71585ST 258AA 5962-8864601MA OM-1850-S-T-M
Contextual Info: Product Comparison Part Search Home Name Package OM1830NCM TO-258AA OM1830SCM TO-258AA OM183NC TO-258AA OM183SC TO-258AA OM1840NCM TO-258AA OM1840NKM TO-204AA OM1840SCM TO-258AA OM1850NKM TO-204AA OM1850SRM D2 OM1850STM TO-257AA OM185SR D2 OM185ST TO-257AA

DNP13

Abstract: DNP resistors ZENER DIODE 5.1V smd DNP CAPACITOR SMD r53 R35 SMD Transistor zener SMD VM ISL28276 ISL28276EVAL1Z ISL28278
Contextual Info: ISL2827xEVAL1Z Evaluation Board User’s Guide Application Note August 2, 2007 Introduction AN1345.0 C12 R46 R46 C12 + 00 4.7UF 4.7 F D2 D2 C10 C10 • ISL28276 Data Sheet, FN6301 0.1μF • ISL28278 Data Sheet, FN6145 1 MMBZ52xxB RF + IN A, B RIN- IN-

Contextual Info: Surface Mounting Guide MLC Chip Capacitors REFLOW SOLDERING D2 D1 D3 D4 D5 Dimensions in millimeters inches Case Size 0201 0402 0603 0805 1206 1210 1808 1812 1825 2220 2225 D1 D2 D3 D4 D5 0.85 (0.033) 1.70 (0.067) 2.30 (0.091) 3.00 (0.118) 4.00 (0.157) 4.00 (0.157)

Sn60Pb40 solder

Abstract: failure rate avx 0201 ceramic capacitor Sn60Pb40 250C260c EIA-RS-198
Contextual Info: Surface Mounting Guide MLC Chip Capacitors REFLOW SOLDERING D2 D1 D3 D4 D5 Dimensions in millimeters inches Case Size 0201 0402 0603 0805 1206 1210 1808 1812 1825 2220 2225 D1 D2 D3 D4 D5 0.85 (0.033) 1.70 (0.067) 2.30 (0.091) 3.00 (0.118) 4.00 (0.157) 4.00 (0.157)

CLDCC

Abstract: cllcc transistor smd j4 WS57C128FB WS57C256F "16k x 8"
Contextual Info: FAMILY OF HIGH PERFORMANCE CMOS EPROMs PART NUMBER PAGE NO. DENSITY SPEED ARCHITECTURE BITS (ns) WS57C128FB 3-7 128K 16K x 8 WS57C256F 3-13 256K 32K x 8 DRAWING NO. NO. OF PINS 35 –70 C2 D2 J4 L3 32 28 32 32 CLLCC CERDIP, 0.6" PLDCC CLDCC 35 –70 C2 D2

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Drawing updated to reflect current requirements. -sld 04-12-06 B Corrected dimensions for symbols D, D2, and L1 for case outline U. Corrected dimensions for symbols D2, L, and L1 for case outline X. Corrected dimensions for symbols D, L, and L1 for case outline Y.

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Drawing updated to reflect current requirements. -sld 04-03-08 B Corrected dimensions for symbols D, D2, and L1 for case outline U. Corrected dimensions for symbols D2, L, and L1 for case outline X. Corrected dimensions for symbols D, L, and L1 for case outline Y.

CLDCC

Contextual Info: FAMILY OF HIGH PERFORMANCE CMOS EPROMs PART NUMBER PAGE NO. DENSITY SPEED ARCHITECTURE BITS (ns) DRAWING NO. NO. OF PINS PACKAGE WS57C64F 3-7 64K 8K X 8 55-70 C2 D2 J4 32 28 32 CLLCC CERDIP, 0.6" PLDCC WS57C128FB 3-13 128K 16K X 8 35-70 C2 D2 J4 L3 32 28

SOT23 PMOS

Abstract: D0218 diode EGP 30b tSoP38xxx TSOP5700 2N7002x tSoP4xxx jfet to 92 TSOP34XXX SMD DO-213 ZENER DIODE
Contextual Info: Si6926ADQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 0.043 @ VGS = 1.8 V 3.6 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2

Contextual Info: MOTOROLA Order this document by MTB75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 75 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

BSO211P

Contextual Info: BSO211P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO211P P-SO 8 V RDS on 67 mΩ -4.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View

Contextual Info: FAMILY OF HIGH PERFORMANCE CMOS EPROMs PART NUMBER PAGE NO. DENSITY SPEED ARCHITECTURE BITS (ns) DRAWING NO. NO. OF PINS PACKAGE WS57C64F 3-19 64 K 8K X 8 5 5 -7 0 C2 D2 J4 32 28 32 CLLCC CERDIP, 0.6" PLDCC WS57C128FB 3-25 128K 16K X 8 3 5 -7 0 C2 D2 J4

smd diode S2 64a

Abstract: BSO203P
Contextual Info: BSO203P OptiMOS -P Power-Transistor TM Product Summary Feature • P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO203P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Package

BSO207P

Contextual Info: BSO207P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View