D1665 Search Results
D1665 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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D1665 |
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Low voltage fast-switching NPN power transistor | Original | 266.77KB | 12 |
D1665 Price and Stock
STMicroelectronics 2STD1665T4TRANS NPN 65V 6A DPAK |
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2STD1665T4 | Digi-Reel | 17,876 | 1 |
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2STD1665T4 | Reel | 14 Weeks | 2,500 |
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2STD1665T4 | 11,560 |
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2STD1665T4 | Cut Tape | 1 |
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2STD1665T4 | 11,550 | 1 |
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2STD1665T4 | 1,435 | 1 |
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2STD1665T4 | 332 |
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2STD1665T4 | 12,500 | 15 Weeks | 2,500 |
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2STD1665T4 | 4,000 |
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2STD1665T4 | 2,500 | 15 Weeks | 2,500 |
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2STD1665T4 | 200,000 | 2,500 |
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2STD1665T4 | 11,566 |
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WeEn Semiconductor Co Ltd WNSC6D16650CW6QDIODE SIL CARB 650V 16A TO247-3 |
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WNSC6D16650CW6Q | Tube | 3,000 | 1 |
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WNSC6D16650CW6Q | Tube | 16 Weeks | 480 |
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WNSC6D16650CW6Q |
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WNSC6D16650CW6Q | Bulk | 575 | 1 |
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WNSC6D16650CW6Q | 1 |
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WNSC6D16650CW6Q | 17 Weeks | 240 |
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WNSC6D16650CW6Q | 17 Weeks | 240 |
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WeEn Semiconductor Co Ltd WNSC6D166506QDIODE SIL CARB 650V 16A TO220AC |
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WNSC6D166506Q | Tube | 2,976 | 1 |
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WNSC6D166506Q | Tube | 16 Weeks | 3,000 |
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WNSC6D166506Q |
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WNSC6D166506Q | Bulk | 985 | 1 |
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WNSC6D166506Q | 17 Weeks | 1,000 |
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WeEn Semiconductor Co Ltd WNSC6D16650B6JDIODE SIL CARBIDE 650V 16A D2PAK |
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WNSC6D16650B6J | Reel | 1,600 | 800 |
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WNSC6D16650B6J | Reel | 16 Weeks | 3,200 |
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WNSC6D16650B6J |
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WNSC6D16650B6J | Cut Tape | 435 | 1 |
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WNSC6D16650B6J | 17 Weeks | 800 |
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WNSC6D16650B6J | 17 Weeks | 800 |
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WeEn Semiconductor Co Ltd WNSC2D16650CJQDIODE ARRAY SIC 650V 16A TO-3PF |
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WNSC2D16650CJQ | Tube | 449 | 1 |
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WNSC2D16650CJQ | Tube | 6 Weeks | 960 |
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D1665 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC |
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IDH16G65C5 | |
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the |
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IDW16G65C5 | |
D1665
Abstract: 2STD1665 2STD1665-1 2STD1665T4 JESD97
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2STD1665 O-251) O-252) D1665 2STD1665 2STD1665-1 2STD1665T4 JESD97 | |
D1665C5
Abstract: Infineon power diffusion process idh16g65c5
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IDH16G65C5 D1665C5 Infineon power diffusion process idh16g65c5 | |
2STD1665
Abstract: 2STD1665-1 2STD1665T4 D1665 JESD97 power transistor Ic 4A NPN to - 251
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2STD1665 O-251) O-252) 2STD1665 2STD1665-1 2STD1665T4 D1665 JESD97 power transistor Ic 4A NPN to - 251 | |
12350
Abstract: 2STD1665 2STD1665T4 D1665 st 833
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2STD1665 2STD1665T4 D1665 12350 2STD1665 2STD1665T4 D1665 st 833 | |
Contextual Info: D1665 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed TAB 3 Applications 1 ■ Voltage regulators ■ High efficiency low voltage switching |
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2STD1665 2STD1665T4 D1665 | |
D1665C5
Abstract: IDW16G65C5
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IDW16G65C5 D1665C5 IDW16G65C5 | |
D1665C5Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC |
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IDH16G65C5 D1665C5 |