D1329 Search Results

2SJ557

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

PA1813

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PA1813

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and

PA1854

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and

Waveguide Gaskets

Abstract: MIL-DTL-85328 WR137 gasket dimensions M83528 001 Waveguide Gaskets WR187 ZZ-R-765 CLASS 2B, GRADE 50 SHELF LIFE m83528 MIL-DTL-83528C WR340 waveguide fluorosilicone curing
Contextual Info: Elastomeric EMI Shielding Solutions www.lairdtech.com Innovative Technology for a Connected World ANTENNAS & RECEPTION WIRELESS REMOTE CONTROL EMI SOLUTIONS THERMAL MANAGEMENT WIRELESS M2M & TELEMATICS ABOUT LAIRD TECHNOLOGIES Laird Technologies designs and manufactures customized, performance-critical

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent

2SK3105

Abstract: marking xa
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance

1278n

Abstract: S6305 chomerics MIL-G-83528 Cho-Seal 1298 S6305 CHO-SEAL 1215 Cho-Seal s6305 3M Nextel EPDM fungus resistance CEPS-0002
Contextual Info: CONDUCTIVE ELASTOMERS ® CHO-SEAL & CHO-SIL Conductive Elastomers Since 1961, Chomerics has invented and extended virtually every aspect of conductive elastomer materials technology — from the earliest silver and silver/copper filled silicones to the

M83528/002D-017

Contextual Info: EMI CATALOG www.lairdtech.com ABOUT LAIRD Laird is a global technology business focused on enabling wireless communication and smart systems, and providing components and systems that protect electronics. Laird operates through two divisions, Wireless Systems and

2SK3105

Abstract: marking xa
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1854 is a switching device which can be driven directly by a 2.5-V power source.

DVP-40EH

Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Contextual Info: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.

PA1813

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and

2SJ557

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance

cn/A/U 237 BG

Abstract: MP 130B transformer MP 130B 1800
Contextual Info: Enclosures . . . . . . for Industry A Phoenix Mecano Company We are Dedicated to Achieving Customer Satisfaction Through Continuous Improvement. Rose+Bopla, the enclosure companies of Phoenix Mecano AG, an international corporation based in Switzerland, has developed a broad range of

Contextual Info: EMI CATALOG www.lairdtech.com ABOUT LAIRD TECHNOLOGIES Laird Technologies designs and manufactures customized, performance-critical products for wireless and other advanced electronics applications. The company is a global market leader in the design and supply of electromagnetic

equivalent transistor D1555

Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Contextual Info: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1

DVP-10SX

Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Contextual Info: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3

2SK3105

Abstract: marking xa
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

PA1854

Abstract: a4660
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and

PA1854

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 1 3 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1813 is a switching device which can be driven directly by a 2.5-V power source.

transistor D1843

Abstract: D1843 d1859 transistor transistor d1913 transistor D1710 D1875 D1835 transistor d1941 d1941 transistor D1853 transistor
Contextual Info: DVP-PM APPLICATION MANUAL Table of Contents Chapter 1: Program Structure of DVP-PM 1.1 O100 Main Program . 1-1 1.1.1 Manual Motion in O100 Main Program . 1-2