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D13003H
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Jilin Sino-Microelectronics
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TRANS GP BJT NPN 400V 1.2A 3TO-126 |
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3DD13003-TU
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JCET Group
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NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A continuous collector current, 1.5W power dissipation, and DC current gain ranging from 20 to 40 at 0.5A collector current. |
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3DD13003(RANGE:20-25)
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JCET Group
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NPN transistor in TO-252-2L package, rated for 400V collector-emitter voltage, 1.5A continuous collector current, with a DC current gain ranging from 8 to 40 and collector dissipation of 1.25W. |
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3DD13003(RANGE:30-35)
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JCET Group
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NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A continuous collector current, 1.5W power dissipation, and DC current gain ranging from 8 to 40, suitable for power switching applications.NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A continuous collector current, 1.5W power dissipation, and DC current gain ranging from 8 to 40, suitable for power switching applications. |
Original |
PDF
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3DD13003(RANGE:25-30)
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JCET Group
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NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A continuous collector current, 1.5W power dissipation, and DC current gain ranging from 8 to 40, suitable for power switching applications. |
Original |
PDF
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3DD13003B-TA
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JCET Group
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NPN transistor in TO-92 package with 400V collector-emitter voltage, 1.5A continuous collector current, 0.9W power dissipation, and DC current gain ranging from 20 to 40. |
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3DD13003B(RANGE:20-25)
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JCET Group
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NPN transistor in TO-92 package, rated for 400V VCEO, 1.5A continuous collector current, 0.9W power dissipation, with hFE range 20-40 and transition frequency of 4MHz. |
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3DD13003N3
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JCET Group
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NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A collector current, low saturation voltage, high speed switching, and operating temperature up to 150°C. |
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